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    Littelfuse Inc V10E20P

    Varistors 20V 10mm Epoxy UltraMOV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI V10E20P Bulk 4,200 50
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    • 100 $0.23
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    Panasonic Electronic Components ERZ-V07D270

    Varistors ZNR Transient/Surge Absorbers Type D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ERZ-V07D270 Bulk 700 100
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    • 100 $0.12
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    Panasonic Electronic Components ERZ-VA7V270

    Varistors ZNR Transient/Surge Absorbers Type D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI ERZ-VA7V270 Ammo Pack 1,000
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    3400PF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RPE132

    Abstract: RPE220 murata rpe131 capacitors GRM43 X7R RPE110 RPE123 RPE131 RPE-114 RPE121 GRM706
    Contextual Info: MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP–COG TYPE GRM SERIES FEATURES • Miniature size ■ No Polarity ■ Nickel Barrier Termination Standard – highly resistant to metal migration ■ Uniform dimensions and configuration ■ Flow for GRM39, 40, 42-6 and


    Original     		GRM39, GRM36 GRM40 GNM30-401 30ppm/ RPE132 RPE220 murata rpe131 capacitors GRM43 X7R RPE110 RPE123 RPE131 RPE-114 RPE121 GRM706 PDF

    kta 3-25

    Abstract: Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1
    Contextual Info: Circuit-Breakers Bulletin 140 / KTA 3 Bulletin 140 / KTA 3 • • • • Motor Protection Characteristics High Switching Capacity High Current Limiting For Compact Motor Starters Overview . 2-2


    Original     		140-MN 140-CMN 140M-K5F 3-160S 140M-M5F 3-250S 140M-P5F 3-400S 140M-K5F 3-160S) kta 3-25 Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1 PDF

    40kv capacitor

    Abstract: 40KVDC lightning arrestor
    Contextual Info: HIGH VOLTAGE CAPACITORS 10KV TO 40KVDC E.I.A. CLASS I DHS SERIES mnfíata /nnoraioA t/i E/cctw/ucs Murata Electronic's new High Voltage Ceramic Capacitors DHS N 4700 Series is designed to meet the stringent requirements of high voltage applications and feature a low


    OCR Scan     		40KVDC DHS60 C-22-C. 40kv capacitor lightning arrestor PDF

    N306AS

    Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
    Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS n306a ISL9N306AP3 ISL9N306AS3ST 45E-2 PDF

    N306AS

    Abstract: N306A ISL9N306AS3ST ISL9N306AP3
    Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AP3/ISL9N306AS3ST 3400pF O-263AB O-220AB N306AS N306A ISL9N306AS3ST ISL9N306AP3 PDF

    n306ad

    Abstract: ISL9N306AD3ST 39e3 N-306A
    Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AD3ST 3400pF O-252 n306ad ISL9N306AD3ST 39e3 N-306A PDF

    n306ad

    Abstract: N306A ISL9N306AD3
    Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    GRM40 COG

    Abstract: GRM42-6 GRM40COG MURATA GRM44-1 COG grm39 cog murata grm39 capacitor marking code XF 270PF GRM42 murata electronics GRM40 b
    Contextual Info: miiRata MONOLITHIC CERAMIC CAPACITORS CERAMIC CHIP-COG TYPE GRM SERIES /nn oyator in Eïccf/wucs FEATURES • Largest production capacity and volume in the world M in ia tu r e size ■ N o Polarity ■ Nickel Barrier Termination Standard highly resistant to metal migration


    OCR Scan     		GRM39, C-22-C. GRM40 COG GRM42-6 GRM40COG MURATA GRM44-1 COG grm39 cog murata grm39 capacitor marking code XF 270PF GRM42 murata electronics GRM40 b PDF

    N306AD

    Abstract: N306A
    Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching


    Original     		ISL9N306AD3ST 3400pF O-252 N306AD N306A PDF

    n306ad

    Abstract: N306A
    Contextual Info: PWM Optimized ISL9N306AD3ST/ ISL9N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N306AD3ST/ ISL9N306AD3 3400pF O-252 O-252) O-251AA) n306ad N306A PDF

    n306ad

    Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
    Contextual Info: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.


    Original     		ISL9N306AD3 ISL9N306AD3ST 3400pF n306ad N306A ISL9N306AD3ST PDF