334 MOSFET Search Results

Contextual Info: NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

Contextual Info: NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

Contextual Info: NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

Contextual Info: NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance

Contextual Info: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

IRF5804PbF

Contextual Info: PD - 95503A IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

4TPE220M

Abstract: 3708 fairchild FDS6982S 2R5TPE220M LTC3708 dn334
Contextual Info: advertisement 2-Phase DC/DC Controller Makes Fast, Efficient and Compact Power Supplies – Design Note 334 David Chen High efficiency, fast transient response and small size are often at odds in power supply designs. Fortunately, the 2-phase LTC 3708 PWM controller makes it possible to

Contextual Info: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >90% reduces system power consumption • High density (334 A/in2) • “Half Chip” V• I Chip package enables surface mount,

D496

Abstract: D505 VIV0102MHJ VIV0102THJ
Contextual Info: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >89% reduces system power consumption • High density (334 A/in3) • “Half Chip” V• I Chip package enables surface mount,

68 UF 450V

Abstract: c 103 mosfet OKAYA 224 Okaya
Contextual Info: HCP-S SERIES CAPACiïOR @ OKAYA M Features • Compact size and resin case. • Improved safety and suppressing self-heating. Applications • High frequent circuit, High voltage resonant circuit, snubber circuit and Protection of semiconductors such as IGBT, IPM and MOSFET.

PMG4218

Contextual Info: E EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION Prepared also subject responsible if other 1/1301 00152-EN/LZT146334 BMR 644Technical 4/M Uen Specification MPM/BY/P Henrik Sundh Approved PMG 4000F series MPM/BY/M [Krister Lundberg]

VN88AFA

Abstract: VN46AFA VN46AF VN66AF VN66AFA VN88AF VN40AFA
Contextual Info: VN46AFA Series 1.2 AMPERES 40-80 VOLTS RPS ON = 3.0, 4.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in

f1s4n100

Contextual Info: <^£.mi- 2onditctoi LPioducti, Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP4N100, RF1S4N100SM 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel

SMK0260

Abstract: SMK 0260 SMK0260I mosfet 600V 20A
Contextual Info: SMK0260I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=7.0nC(Typ.) Low RDS(on) : RDS(on)=4.7Ω(Max.) D G Ordering Information

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET -25A, -100V, 0.150 Ω, P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field

2n6796

Abstract: MOSFET
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications

Contextual Info: Temic SÌ4480DY S e m i c o n d u c t o r s N-Channel 80-V Rated MOSFET Product Summary V d s V I d (A ) I*DS(on) ( ß ) 0.035 @ V qS = 10 V ± 6.0 0.040 @ VGS = 6.0 V ± 5.5 80 ,0 * ' SO -8 It . 0 -'I- Top View N-Channe! M O SFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: ^s.mi-dondiicto'i Lpioduati, One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 RFP25N05 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A,50V The RFP25N05 N-channel power MOSFET is manufactured

SiR470DP

Abstract: S-82146 S82146
Contextual Info: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: IRLW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175» »Operating Temperature ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = 60V

an7254

Abstract: AN7260 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TB334 TA17405
Contextual Info: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate

MOSFET

Abstract: 2N6784
Contextual Info: ne>. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6784 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for