332A0 Search Results

Contextual Info: _ 1_ SPECIFICATION 30,8*0,4 25 D * 0.15 0, 2 5 B 00,6 ii iiL Nut thread Mot ing Cycles F i l t e r type 500 C Copoc i tance 3900p f ±20* Work ing Vo 1 toge 10Ov Current Rating 7.5A 1nsu lot io n Resistance >1Gfi LO FREQUENCY MHz O nJ 16,9-10.2 PCB Layout, Component side,

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TP3008

Abstract: TP3034 TP3007 MRF898 TP3020A TP1301 tp3061 MRF890 MRF896 MRF896S
Contextual Info: MOTOROLA SC X S T R S / R F 4 bE D • b3b?2S4 00*5304? 2 «MOTb 7=33’OI RF Power Bipolar Transistors — 900 MHz Transistors (continued) 8 0 6 -9 6 0 MHz BAND (continued) Device Pout Output Power Watts Class Pin Input Power Watts Gp (MlnyFreq. Power Gain

mrf1000ma

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M ic ro w a v e Pulse P o w er T ran sisto rs M RF1000M A M R F 1000M B . . . d e s ig n e d fo r C la ss A a n d A B c o m m o n e m itte r a m p lifie r a p p lic a tio n s in th e lo w -p o w e r sta g e s o f IFF, D M E , T A C A N , ra d a r tra n s m itte rs , a n d C W s yste m s.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

ansi y14.5m-1982

Contextual Info: F 4 K 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D 3 2 H SEATING PLANE A DIM A C D F H J K J C STYLE 1: PIN 1. 2. 3. 4. BASE EMITTER BASE COLLECTOR INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MRF1150MB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave P ulse Pow er Tran sisto rs MRF1150MA MRF1150MB Designed for Class B a n d C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

SRW42EC

Abstract: tdk SRW tdk ferrite pc30 EE10 bobbin SRW10ES EE16A SRW transformers SRW16ES EE19 bobbin 12 pins EE19A
Contextual Info: DK Power Transformers, Power Inductors POWER TRANSFORMERS AND POWER INDUCTORS, SRW SERIES TDK provides transformers and inductors using the most suitable materials with excellent design tech­ niques for switching power supplies. STANDARD SPECIFICATIONS Typical _

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

TP10D

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors Designed for Class 8 and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

33204

Contextual Info: MOTOROLA Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1002MA MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

Contextual Info: MOTOROLA Order this document by MRF1015MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1015MA MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

Contextual Info: MOTOROLA Order this document by MRF1004MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.