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    TP3019S Search Results

    TP3019S Datasheets (1)

    Motorola
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TP3019S
    Motorola UHF Power Transistors Scan PDF 124.74KB 4

    TP3019S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC5055

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 3019 TP 3019S The RF Line U H F P o w e r T ra n s is to rs The TP3019 and TP3019S are designed fo r 24 V c o m m o n e m itte r base sta tio n a m p li­ fiers. O perating in the 8 2 0 -9 6 0 MHz b a n d w id th , th e y have been sp ecifica lly desig n ed fo r


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    equivalent transistor K 2767

    Abstract: transistor K 2767 bd135 equivalent transistor bd135
    Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3019S The RF Line UHF Power Transistor The TP3019S is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, the device has been specifically designed for use in analog and digital GSM systems.


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    tp3019sequivalent transistor k 2767transistor k 2767bd135 equivalent+1transistor bd135 PDF

    1N4I48

    Abstract: TP3020A W-960 transistor BD135 BD135 TP3019 TP3019S Motorola Power Transistor
    Contextual Info: MOT OR OL A SC XSTRS/R MbE F D • b3b7254 OO^SEOà 0 ■ PIOTb T 3 3 -0 3 MOTOROLA ■ SEM ICO N D U CTO R ■ TECHNICAL DATA TP 3019 TP3019S The RF Line U H F P o w er T ra n sisto rs The TP3019 and TP3019S are designed for 24 V common emitter base station ampli­


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    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    TP3008

    Abstract: TP3034 TP3007 MRF898 TP3020A TP1301 tp3061 MRF890 MRF896 MRF896S
    Contextual Info: MOTOROLA SC X S T R S / R F 4 bE D • b3b?2S4 00*5304? 2 «MOTb 7=33’OI RF Power Bipolar Transistors — 900 MHz Transistors (continued) 8 0 6 -9 6 0 MHz BAND (continued) Device Pout Output Power Watts Class Pin Input Power Watts Gp (MlnyFreq. Power Gain


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    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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