331 TRANSISTOR Search Results

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

DF 331 TRANSISTOR

Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

transistor B A O 331

Abstract: D F 331 TRANSISTOR
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: User's Guide SLVU269 – September 2008 TPS650240EVM-331 This User’s Guide describes the characteristics, operation, and use of the TPS650240EVM-331 evaluation module EVM . This EVM is designed to help the user evaluate the TPS650240 and the TPS79901 in a

DF 331 TRANSISTOR

Abstract: transistor df 331
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values

12S10

Abstract: C67078-S3114-A2 331 transistor
Contextual Info: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3114-A2

Contextual Info: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current

transistor h 331

Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
Contextual Info: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten

D F 331 TRANSISTOR

Contextual Info: SIEM ENS SM T Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code S F H 331 Q 62702-P1634 Wesentliche Merkmale • Geeignet für V apor-Phase Löten und IR-Reflow Löten

Contextual Info: WL 4-2 W L 4-2 F 331 -E 331 W L 4-2 F 132 -E 132 F Range 2.8 m ¥ •M -12 Features: • Red light sender LED to assist with setting-up • Polarisation filte r which enables recognition o f objects w ith glossy surfaces Adjustment aided by LED signal strength indicator

N331

Abstract: SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330
Contextual Info: WT 4-2 W T 4-2 P 331 -N 331 W T 4-2 P 132 -N 132 V Scanning range ¥ Y 130 m m - Features 12- W T 4-2 P 330 -N 330 Red light sender LED to assist with setting-up Scanning distance is steplessly variable A Background suppression • Adjustment aided by LED signal

s3331

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

transistor 21Y

Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Contextual Info: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements

transistor BC 331

Abstract: lm567 schematic diagram MC 331 transistor LM567 Adjustable Power Supply Schematic Diagram LM567CH 331SSE BC 331 Transistor LM58 connection diagram
Contextual Info: National Sem iconductor Sem iconductors Linear I.C .'s- Consumer Circuits SCHEMATIC AND CONNECTION DIAGRAM LM567 Series Tone Decoders LMS67H LMS67CH Metal Can Package REFERENCE TABLE Code Stock No. LMS67H LM567CH LMS67CN 331SSE 331 MC 331S7A GENERAL DESCRIPTION

BUK657

Abstract: BUK657-400A BUK657-400B T0220AB IRF FET
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D m ^53=331 □□2070Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

mosfet J 3305

Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Contextual Info: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,

phototransistor 650 nm

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

phototransistor 650 nm

Abstract: phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

npn transistor dc 558

Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
Contextual Info: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the