331 TRANSISTOR Search Results

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

Contextual Info: User's Guide SLVU269 – September 2008 TPS650240EVM-331 This User’s Guide describes the characteristics, operation, and use of the TPS650240EVM-331 evaluation module EVM . This EVM is designed to help the user evaluate the TPS650240 and the TPS79901 in a

transistor h 331

Abstract: D F 331 TRANSISTOR C 331 Transistor transistor d 331 d 331 Transistor transistor 331 p 331 transistor y 331 Transistor transistor 331 VQE 22 led
Contextual Info: SIEMENS SMT Multi TOPLED SFH 331 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code SFH 331 Q62702-P1634 W esentliche Merkmale • Geeignet für Vapor-Phase Löten und IR-Reflow Löten

Contextual Info: WL 4-2 W L 4-2 F 331 -E 331 W L 4-2 F 132 -E 132 F Range 2.8 m ¥ •M -12 Features: • Red light sender LED to assist with setting-up • Polarisation filte r which enables recognition o f objects w ith glossy surfaces Adjustment aided by LED signal strength indicator

N331

Abstract: SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330
Contextual Info: WT 4-2 W T 4-2 P 331 -N 331 W T 4-2 P 132 -N 132 V Scanning range ¥ Y 130 m m - Features 12- W T 4-2 P 330 -N 330 Red light sender LED to assist with setting-up Scanning distance is steplessly variable A Background suppression • Adjustment aided by LED signal

s3331

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

d331 npn transistor

Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

phototransistor 650 nm

Abstract: phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

Contextual Info: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

transistor d 331

Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

Contextual Info: T ra n s is to rs <S u rfa ce Mounted T y p e s > •SMT SC-59/Japanese SOT-23 •NPN Transistors Function Type ■ Ic (mA) Max. Polarity DG07717 BV ceo (V) BV ebo (V) 331 ■RHM @IC & VcE hpE Min. nonm Max. (mA) f T (MHz) Min. (V) Cob (pF) Max. LNGPA MMST5086

phototransistor 650 nm

Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

Contextual Info: TX TESTING 2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 15 .591 7.4 .291 15 .591 8.2 .323 TX RELAYS FEATURES 7.4 .291 8.4 .331 • Breakdown voltage between contacts and coil: 2,000 V • Surge withstand between contacts and coil: 2,500 V

SKH122

Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
Contextual Info: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

IRF3303

Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •

2N3773 equivalent

Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Contextual Info: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:

p331

Abstract: SGSP130
Contextual Info: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate

332MCP

Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
Contextual Info: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.