330 MH Search Results

IRFP 740

Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7

IRFP 740

Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Contextual Info: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

mpsa42 "sot23"

Abstract: MPSA42 sot-223 siemens bfp22
Contextual Info: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN

Contextual Info: HSP061-2Y Automotive 2-line ESD protection for high speed lines Datasheet - production data Complies with following standards: • ISO 10605 - C = 150 pF, R = 330 Ω – 30 kV air discharge – 15 kV (contact discharge) • ISO 10605 - C = 330 pF, R = 330 Ω

RA07N3340M

Abstract: RA07N3340M-01 RA07N3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz

hatfield attenuator

Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

DP-330

Abstract: Vari-L Company transformer 204C 213B c11fb
Contextual Info: DP-330 Wideband RF/Pulse Transformer .5-150 MHz im i TYPICAL PERFORMANCE GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL DP-330 Type: 50 ohm unbalanced 450 ohm unbalanced The DP series is composed of three -rarvsformers offering the most common configurations in

Contextual Info: im i GUARANTEED MINIMUM PERFORMANCE DATA DP-330 Wideband RF/Pulse Transformer .5-150 MHz TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL DP-330 Type: 50 ohm unbalanced ¿50 nhm unbalanced - 1 dB Bandwidth. MHz The DP senes is composée of three uanstormers offeririg Ihe

RA07H3340M

Abstract: RA07H3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz

ADV7391

Abstract: Video-Encoders adv7393 YPbPr AD723 material declaration ADV7170
Contextual Info: Analog Devices: ADV7123: 330 MHz Triple 10-Bit High Speed Video . 1 of 3 /. ADV7123: 330 MHz Triple 10-Bit High Speed Video DAC The ADV7123 ADV is a triple high speed, digital-to-analog

RA07M3340M

Abstract: RA07M3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz

Contextual Info: <Silicon RF Power Modules > RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.

Contextual Info: Wfiol mL/ÎMHEWLETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN

360 to 400 mhz rf amplifier module

Abstract: RA07H3340M-101 RF MOSFET MODULE RA07H3340M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz

RA07H3340M-101

Abstract: RA07H3340M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz

Contextual Info: 50 Ohm N Isolator Operating From 330 MHz to 403 MHz And 150 Watts With 20 dB Isolation TECHNICAL DATA SHEET PE8324 Configuration Connector 1 N Female Connector 2 N Female Frequency Range 330 MHz to 403 MHz Design Isolator Electrical Specifications Values at 25°C, sea level

Contextual Info: 50 Ohm N Circulator Operating From 330 MHz to 403 MHz And 150 Watts With 20 dB Isolation TECHNICAL DATA SHEET PE8429 Configuration Connector 1 N Female Connector 2 N Female Frequency Range 330 MHz to 403 MHz Design Circulator Electrical Specifications Values at 25°C, sea level

Contextual Info: 50 Ohm SMA Circulator Operating From 330 MHz to 403 MHz And 150 Watts With 20 dB Isolation TECHNICAL DATA SHEET PE8428 Configuration Connector 1 SMA Female Connector 2 SMA Female Frequency Range 330 MHz to 403 MHz Design Circulator Electrical Specifications Values at 25°C, sea level

MW500-1512

Contextual Info: Voltage Controlled Oscillators MW500-1512 330 MHz to 890 MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 330 MHz to 890 MHz 0.5/20 V 6 +/- 2 dBm 10 kHz Offset -97 typ dBc/Hz 100 kHz Offset -118 (typ) dBc/Hz Frequency Pushing 3 MHz/V

Contextual Info: Document 894-1 Chip Inductors – 0603HL Series 1608 • Higher inductance values than other 0603 inductors • Inductance range: 330 nH – 3.3 µH Part number1 Inductance2 ±5% (nH) 0603HL-331XJR_ 330 @ 25 MHz 0603HL-391XJR_ 390 @ 25 MHz 0603HL-471XJR_ 470 @ 25 MHz

Contextual Info: 50 Ohm SMA Isolator Operating From 330 MHz to 403 MHz And 150 Watts With 20 dB Isolation TECHNICAL DATA SHEET PE8323 Configuration Connector 1 SMA Female Connector 2 SMA Female Frequency Range 330 MHz to 403 MHz Design Isolator Electrical Specifications Values at 25°C, sea level

AGC-330

Contextual Info: whn 1"KM H Ew LETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 com bines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN