KM684000CLG-5L
Abstract: KM684000C KM684000CL KM684000CLI KM684000CLI-L KM684000CL-L 512Kx8 bit Low Power CMOS Static RAM
Contextual Info: CMOS SRAM KM684000C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6T4008C1C Family
Abstract: K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM
Contextual Info: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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k6t4008c1c512kx8047maxk6t4008c1c family+8k6t4008c1c-gl70k6t4008c1c-mb55mf55 typek6t4008c1c-bk6t4008c1c-fk6t4008c1c-lk6t4008c1c-p512kx8 bit low power cmos static ram
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sram 681000
Abstract: KM681000ELG-5L KM681000
Contextual Info: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
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Contextual Info: CMOS SRAM KM684000C Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial draft O ctober 20,1998 Prelim inary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6T4008C1C-DB55
Abstract: K6T4008C1C-DB70 K6T4008C1C-GL70 K6T4008C1C-VB70 A13285 K6T4008C1C-GB70 K6T4008C1C-MB55
Contextual Info: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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k6t4008c1c512kx8047maxk6t4008c1c-db55+6k6t4008c1c-db70k6t4008c1c-gl70k6t4008c1c-vb70a13285k6t4008c1c-gb70k6t4008c1c-mb55
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K6T1008C2E-DB70
Contextual Info: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.
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KM684000BLP-7
Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L CMOS Logic Family Specifications km684000blt
Contextual Info: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA
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km684000b512kx815/35ma10/45ma+10100pf047max002minkm684000blp-7km684000blkm684000blikm684000bli-lkm684000bl-lcmos logic family specificationskm684000blt
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KM684000BLP
Abstract: KM684000BLP-7 KM684000BLP-5L KM684000BLR-5L KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-7L
Contextual Info: CMOS SRAM KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA
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KM681000ELG-5L
Abstract: KM681000E KM681000EL KM681000ELI KM681000ELI-L KM681000EL-L 32-DIP-600 128Kx8 cmos sram 600mil km681000elg-7
Contextual Info: KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.
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Contextual Info: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Prelim inary 0.2 Revise - Changed Operating current Icc2; 80m A -> 90mA
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KM681000B
Abstract: KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft for commercial product - Commercial Product only October 28, 1992 Preliminary 0.1 - Initial draft for Extended/Industrial Product
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Contextual Info: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7th 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write; 35m A -> 45mA
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LG tft circuit diagram
Contextual Info: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial Drall December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35mA -» 45mA Icci at read/write : 15/35mA
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km684000b512kx815/35ma10/45ma+4100pf525mil76fcqlg tft circuit diagram
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Contextual Info: KM684000B Family CMOS SRAM Document Tills 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft D ecem ber 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision Icc at write : 35m A -> 45m A
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K6T1008C2E-GB70
Abstract: K6T1008C2E-TB55
Contextual Info: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product.
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K6T4008C1B-DB70
Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
Contextual Info: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA
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k6t4008c1b512kx815/35ma10/45ma+13100pf70/100ns55/70ns047maxk6t4008c1b-db70k6t4008c1b-gl70k6t4008c1b-bk6t4008c1b-fk6t4008c1b-lk6t4008c1b-pk6t4008c1bdl70k6t4008c1b-vb70k6t4008c1b-gb55
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512Kx8-bit
Abstract: K6X4008C1F-GB55 512Kx8 bit Low Power CMOS Static RAM K6X4008C1F-DF70 K6X4008C1F-GF70 MF55 Type K6X4008C1F K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q
Contextual Info: Preliminary CMOS SRAM K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 2002 Preliminary 0.1 Revised - Added Commercial Product. November 30, 2002 Preliminary
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K6T4008C1B-DB70
Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
Contextual Info: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA
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K6X4008C1F-UF55
Abstract: K6X4008C1F 32-TSOP2-F k6x4008c1f-uf K6X4008C1F-UB55 K6X4008C1F-GF55 K6X4008C1F-DF55 K6X4008C1F-DF70 K6X4008C1F-VF55 K6X4008C1F-B
Contextual Info: CMOS SRAM K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 2002 Preliminary 0.1 Revised - Added Commercial Product. November 30, 2002 Preliminary 1.0
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KM684000ALP-7
Abstract: KM684000ALP-7L KM684000ALG-7 KM684000ALGI-7L KM684000ALG-7L KM684000ALR-7L KM684000A KM684000AL KM684000ALI KM684000AL-L
Contextual Info: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 26, 1993 Advance 0.1 Revise December 9, 1994 Preliminary 0.2 Revise - Changed Operating current
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M684000
Abstract: 684000BLG
Contextual Info: K M 68 40 00 B Fami l y D o o u m CMOS SRAM e n t T itle 51 2 K x 8 bit Low Power C M O S Static RAM Revisio n N o . H istory D raft D a te Rem ark 0.0 Initial Draft December 7th 1996 Advance 0.1 Revise -C h a n g e d Operating current by reticle revision
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684000BLP-7L
Abstract: 684000BLG
Contextual Info: CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0 .0 Initial D raft December 7, 1996 Advance 0.1 Revise - Changed O perating current by reticle revision Icc at write : 35m A - » 45m A Ic c i at read/write : 1 5 /3 5 m A ^ 10/45mA
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K6T1008C2E-GB70
Abstract: K6T1008C2E-DL70 K6T1008C2E K6T1008C2E-DB55 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P K6T1008C2ETB70 K6T1008C2E-DB70
Contextual Info: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.
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K6X1008C2D-GF55
Abstract: k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 K6X1008C2D
Contextual Info: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.
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