32BX Search Results
32BX Price and Stock
KEMET Corporation CDR32BX103BKUS7370CAP CER 10000PF 100V BX 1206 |
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CDR32BX103BKUS7370 | Digi-Reel | 3,986 | 1 |
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Vishay Vitramon CDR32BX393AKURAJCAP CER 0.039UF 50V BX 1206 |
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CDR32BX393AKURAJ | Cut Tape | 2,486 | 1 |
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Vishay Vitramon CDR32BX472BKURAJCAP CER 4700PF 100V BX 1206 |
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CDR32BX472BKURAJ | Digi-Reel | 1,950 | 1 |
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Kyocera AVX Components CDR32BX223AKWR-1KSMP MLC HI-REL |
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CDR32BX223AKWR-1K | Reel | 1,000 | 1,000 |
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KEMET Corporation CDR32BX472BKUS7185CAP CER 4700PF 100V BX 1206 |
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CDR32BX472BKUS7185 | Digi-Reel | 400 | 1 |
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32BX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic |
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32B-XXX5 1Mx325V/12V 120ns 1Mx32, 2Mx16 V/12V 32B-XG2TX5 32B-XHX5 66-pin, 5/12V) | |
LQFP144
Abstract: Kawasaki Microelectronics fsdm misc KL5BUDV002 KL5BUDV003 KL5KUSB201 KS6000 16bx33mhz KS600
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KL5BUDV003 LQFP144 Kawasaki Microelectronics fsdm misc KL5BUDV002 KL5KUSB201 KS6000 16bx33mhz KS600 | |
sony lcd tv circuit diagram free
Abstract: sony DVD player with usb port circuit diagram fingerprint scanner circuit HD6417727F160CV BGA 441 SH7724 R5F61652 R5F72167ADFA R8A77240 yamaha electone
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M16C/80. M16C/80, RS-232C M3A-0037G01 M3A-0038G01 M3A-0039 M3A-0040 M3A-0032 M3A-0032, M3A-0037G01, sony lcd tv circuit diagram free sony DVD player with usb port circuit diagram fingerprint scanner circuit HD6417727F160CV BGA 441 SH7724 R5F61652 R5F72167ADFA R8A77240 yamaha electone | |
G3202TL1U
Abstract: G3202 G3202B 32BX
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G3202 G3202 SC-70-6 SC-70-6-lead G3202TL1U G3202TL2U G3202B21U G3202B 32BX | |
transistor marking A9
Abstract: A9 marking diode sot23 MARKING 33A DIODE SOT23 14a 15a 16a 17a 18a 19a 20a sot23 32BX diode MARKING CODE A9 a9 sot 23 diode diode A9 sot 23 diode A9 sot23 t894
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APL5301/2 300mA APL5301/2 300mA. 60uVRMS 260mV transistor marking A9 A9 marking diode sot23 MARKING 33A DIODE SOT23 14a 15a 16a 17a 18a 19a 20a sot23 32BX diode MARKING CODE A9 a9 sot 23 diode diode A9 sot 23 diode A9 sot23 t894 | |
R10-TContextual Info: PRELIMINARY KM29N040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us |
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KM29N040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29N040T KM29N040 -TSOP2-400F -TSQP2-400R R10-T | |
Contextual Info: TM September 2013 Kinetis E Strong Robustness High Efficiency Low Cost Strong Robustness – EMC/ESD design technology ensure strong noise immunity performance High Efficiency – Cortex-M0+ core up to 48MHz and 40x more than 8/16-bit MCUs Low Cost – Optimized for cost-sensitive |
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48MHz 8/16-bit IEC61000-4-4) IEC61000-4-2) IEC60730 8/16bit AN4757 AN4779 AN4767 AN4775 | |
MB88F332
Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
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MB88F332 MB88F332. 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8" | |
327X
Abstract: 30A sot-89 319X 14a 15a 16a 17a 18a 19a 20a sot23 Diode SOT-23 marking L5 APL5301 32BX MARKING 33A 3PIN diodes sc62 MARKING CODE MARKING CODE 10c sc-62
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APL5301/2 300mA APL5301/2 300mA. 260mV 327X 30A sot-89 319X 14a 15a 16a 17a 18a 19a 20a sot23 Diode SOT-23 marking L5 APL5301 32BX MARKING 33A 3PIN diodes sc62 MARKING CODE MARKING CODE 10c sc-62 | |
32B-XXX3Contextual Info: WHITE /M IC ROELECTRONIC S 1Mx32 3.3V FLASH MODULE A D V A N C ED * FEATURES Boot Code Sector A rchitecture: B = Bottom Sector Low Pow er CM O S, 1.0mA Standby • A ccess Tim es of 100, 120, 150ns ■ Packaging • 66-pin, PGA Type, 1.185 inch square. Herm etic Ceram ic |
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1Mx32 150ns 32B-XG 32B-XH 32B-XXX3 | |
Contextual Info: •lì WF1M32B-XXX3 Hi-R£LiASIÜTY PRODUCT 1Mx32 3.3V FLASH MODULE FEATURES ■ A ccess Times of 1 0 0 ,1 2 0 ,150ns Boot Code Sector Architecture Bottom ■ Packaging Low Power CM OS, 1 .OmA Standby • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic |
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WF1M32B-XXX3 1Mx32 150ns | |
AES-128
Abstract: YUV422 H.264 encoder H.264 codec h.264 "motion jpeg" h264 encoder h264 h.264 processing
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1280x1024 30fps YUV422) AES-128 15mmx15mm, YUV422 H.264 encoder H.264 codec h.264 "motion jpeg" h264 encoder h264 h.264 processing | |
29V040Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us |
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KM29V040T 512Kx8Bit 512Kx8 500us 400mil/0 KM29V040T KM29V040 -TSOP2-400F -TSQP2-400R 29V040 | |
Analog Switch
Abstract: SC70-6
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G3202 G3202 G3202BTL1U G3202BTL2U SC-70-6 OT-363) G3202BB21U Analog Switch SC70-6 | |
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ir43
Abstract: ML675050 d1912 2322 157 11023 PHILIPS br 8550 c iso7816 sim BR 8550 D ir58 MAS 10 RCD FJUL675050-06
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FJUL675050-06 ML675050 ADSNM02 ADSNM01 ADSNM00 009CH ir43 ML675050 d1912 2322 157 11023 PHILIPS br 8550 c iso7816 sim BR 8550 D ir58 MAS 10 RCD FJUL675050-06 | |
Contextual Info: W F1M 32B-XXX3 W h it e E l e c t r o n ic D e s ig n s C o r p o r a t i o n 1Mx32 3.3V FLASH MODULE FEATURES • Access Tim es of 100,120, 150ns ■ Boot Code Sector Architecture Bottom ■ Packaging ■ Low Power CMOS, 1,0mA Standby • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic |
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32B-XXX3 1Mx32 150ns 16KByte, 32KByte, 64kBytes | |
Contextual Info: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program |
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KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. KM29V040 | |
ms3406D
Abstract: MS3406DJ MS3402 MS3406 MS3400D MS34060J MS3401D mil-c-25769 MIL-C-5015 MS3402 MS3404
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mil-c-5015 10s-2 10sl-3 10sl-4 12s-3 14s-2 14s-4 14s-5 14s-6 14s-7 ms3406D MS3406DJ MS3402 MS3406 MS3400D MS34060J MS3401D mil-c-25769 MIL-C-5015 MS3402 MS3404 | |
Contextual Info: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program |
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KM29N040T 512Kx8Bit KM29N040T 32-byte 500us 120ns/byte. KM29N040 | |
180NM cmos process parameters
Abstract: MB88F332 APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666
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MB88F332 MB88F332. 180NM cmos process parameters APIX2 gi 9448 1280x480 apix ashell PTMR05 TFT LCD n96 EGS02 rgb888 to rgb666 | |
Contextual Info: UZÀ WHITE /M IC R O E L E C T R O N IC S 1Mx32 3.3V FLASH MODULE W F1 M 32 B -X X X 3 P R E L IM IN A R Y * FEATURES • ■ Access Tim es o f 1 0 0 ,1 2 0 ,150ns ■ B oot Code S ector A rch ite ctu re : B = B ottom S ector Packaging ■ Low Pow er CMOS, 1.0m A Standby |
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1Mx32 150ns 66-pin, 16KByte, 32KByte, | |
Contextual Info: ça W F1M 32B-XXX5 WHITE /M ICROELECTRONICS 1Mx32 5V/12V FLASH MODULE PRELIMINARY* FEATURES • Access Times of 10 0 ,120ns ■ Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. ■ Packaging: ■ Commercial, Industrial and Military Temperature Ranges |
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32B-XXX5 1Mx32 V/12V 120ns 1Mx32, 2Mx16 66-pin, 16KByte 96KByte | |
Contextual Info: ç M/HITE /MICROELECTRONICS a 1Mx32 3.3V FLASH MODULE WF1M32B-XXX3 PRELIMINARY* FEATURES • A cce ss Times of 1 0 0 ,1 2 0 ,150ns ■ Packaging ■ • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401 • 68 lead, Low Profile CQFP (G2T), 4.6mm (0.180 inch) |
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1Mx32 WF1M32B-XXX3 150ns 16KByte, 32KByte, 64kbytes 32B-XG | |
A11 MARKING SOT23-5Contextual Info: APL5301/2 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features General Description • • The APL5301/2 series are micropower, low noise, low dropout linear regulators, which operate from 3V to 6V input voltage and deliver up to 300mA. Typical dropout voltage is only 260mV at 300mA loading. Designed for use in battery-powered system, the low 50uA |
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APL5301/2 300mA APL5301/2 300mA. 260mV A11 MARKING SOT23-5 |