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Amphenol Corporation 1332E006FZ RECEPT. SOLDER 06CTS - Bulk (Alt: 1332E006FZ)
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Avnet Americas	1332E006FZ	Bulk		24 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SiTime Corporation 8A35032E-000AJG - Trays (Alt: 8A35032E-000AJG)
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Avnet Americas	8A35032E-000AJG	Tray		33 Weeks	168	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Amphenol Corporation 1332E006FS RECEPT. CRIMP 06CTS - Bulk (Alt: 1332E006FS)
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Avnet Americas	1332E006FS	Bulk		24 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SiTime Corporation 8A35032E-000AJG8 - Tape and Reel (Alt: 8A35032E-000AJG8)
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Avnet Americas	8A35032E-000AJG8	Tape & Reel		33 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Amphenol Corporation 1332E003MS RECEPT. CRIMP 03CTS - Bulk (Alt: 1332E003MS)
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Avnet Americas	1332E003MS	Bulk		24 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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32E00 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IA-EM02A Abstract: Emerging Display Technologies 6 ccfl inverter LCD display CCFL inverter Emerging Display EG SY 180/12 200H EU-002 ccfl inverter 6 pin 32E00 Contextual Info: FILE NO . CAS-10073 EXAMINED BY : EMERGING DISPLAY APPROVED BY: ISSUE : AUG. 10, 1998 TOTAL PA G E : TECHNOLOGIES CORPORATION VERSION : 4 CUSTOMER ACCEPTANCE SPECIFICATIONS f \ M ODEL NO . : 32E00ÎCCFL TYPES FO R M ESSRS : 10 CUSTOMER'S APPROVAL DATE : BY	OCR Scan	cas-10073 32e00 ia-em02a emerging display technologies +76 ccfl inverter lcd display ccfl inverter emerging display eg sy 180/12 200h eu-002 ccfl inverter 6 pin	PDF
JS28F512M29 Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	m29ew 256-mbit 512-mbit x8/x16 +15100ns 512-word 14mb/s kbytes/64 pc28f00am29ewha 11-apr-2011 js28f512m29 js28f256m29 js28f256 js28f512 pc28f00am29ew js28f00am29ew pc28f00am29 js28f00 js28f256m29ewl	PDF
Spansion S29GL512N11 Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	s29glxxxn s29gl512n s29gl256n s29gl128n +4128-word/256-byte 8-word/16-byte 27631sb2 spansion s29gl512n11	PDF
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,	Original	s29gl-n s29gl512n s29gl256n s29gl128n +3s29gl128p s29gl256p s29gl512p	PDF
a22t Abstract: S19G S29GL-N Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications	Original	s29gl-n s29gl512n s29gl256n s29gl128n +2a22t s19g	PDF
S29GL-N Abstract: 1E300 Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this	Original	s29gl512/256/128n s29gl512n s29gl256n s29gl128n +2s29gl-n 1e300	PDF
7be0 Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	m29ew 256-mbit 512-mbit x8/x16 +5100ns 512-word 48mb/s kbytes/64 7be0	PDF
S70GL01GN00 Abstract: S29GL01GP S29GL512N Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP	Original	s70gl01gn00 s70gl01gn s29gl01gp s29gl512n	PDF
2B60000 Abstract: S70GL01GN00 S29GL512N gl512 2200-0002 Contextual Info: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development	Original	s70gl01gn00 2b60000 s29gl512n gl512 +12200-0002	PDF
M29EWL Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	m29ew 256-mbit 512-mbit x8/x16 +10100ns 512-word 14mb/s kbytes/64 144kb 256mb m29ewl js28f00am29ewh 28f256m29ew js28f00am29ew	PDF
JS28F00am29 Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	m29ew 256-mbit 512-mbit x8/x16 +14100ns 512-word 14mb/s kbytes/64 js28f00am29 js28f00am29ew js28f512m29 js28f256m29 pc28f00am29ew pc28f00am29 js28f512 pc28f00b pc28f512m js28f256	PDF
S29GL512N datasheet Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and	Original	s29gl-n s29gl512n s29gl256n s29gl128n +7s29gl512p s29gl256p s29gl128p s29gl512n datasheet gl128n s29gl256p spansion spansion obsolescence s29gl	PDF
gl256N Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications	Original	s29gl-n s29gl512n s29gl256n s29gl128n +7gl256n s29gl512n datasheet s19gl128n 31df* 33h s29gl512 fbga 8 x 14 package tray s29gl date code marking	PDF
SA418 Abstract: 346000 S29GL-N Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications	Original	s29gl-n s29gl512n s29gl256n s29gl128n +2sa418 346000	PDF

A 27631 Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0 Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	s29glxxxn s29gl512n s29gl256n s29gl128n +8128-word/256-byte 8-word/16-byte 27631a1 a 27631 1128 marking s29gl512 gl256n a24-a0	PDF
S29GL512N datasheet Abstract: Spansion S29GL256N S29GL-N s29gl512 S29GL128N S29GL256N S29GL512N S29GL-P S29GL-N_00_ Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this	Original	s29gl-n s29gl512n s29gl256n s29gl128n +5s29gl512n datasheet spansion s29gl256n s29gl512 s29gl-p s29gl-n_00_	PDF
JS28F512M29EWL Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	m29ew 256-mbit 512-mbit x8/x16 +14100ns 512-word 14mb/s kbytes/64 js28f512m29ewl js28f00am29ewh js28f256m29ewl js28f512m29ewh js28f00am29 pc28f512m29ewh js28f256m29ewh jesd-47 pc28f00am29ewh 28f256m29ew	PDF
JS28F512 Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29 Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers	Original	m29ew 256-mbit 512-mbit x8/x16 +15100ns 512-word 14mb/s kbytes/64 11-apr-2011 pc28f00am29ewhb js28f512 js28f256m29ewl m29ewl js28f256m29 js28f512m29 js28f00am29 pc28f512 5d200 pc28f256m29	PDF
JS28F512M29 Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings	Original	512mb m29aw x8/x16 100ns +15110ns 512-word 128kb/64 09005aef8462ccad/zip 09005aef8462cca4 js28f512m29 m29awh pc28f512m29awhb pc28f00am29 micron 512mb nor flash 8bit data pc28f00am29awlb pc28f512m pc28f512 js28f512 m29a	PDF
s29gl512 Abstract: S29GL128N S29GL256N S29GL512N S29GL-N S29GL-P 0060000-007FFFF Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications	Original	s29gl-n s29gl512n s29gl256n s29gl128n +3s29gl512 s29gl-p 0060000-007ffff	PDF
Spansion S29GL256N Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	s29glxxxn s29gl512n s29gl256n s29gl128n +4128-word/256-byte 8-word/16-byte 27631a3 spansion s29gl256n	PDF
A 27631 Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000 Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages	Original	s29glxxxn s29gl512n s29gl256n s29gl128n +10128-word/256-byte 8-word/16-byte 27631a1 a 27631 27631 1128 marking gl256n sa4871 sa417 24a000	PDF
0D20000 Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and	Original	s29gl-n s29gl512n s29gl256n s29gl128n +4s29gl512p s29gl256p s29gl128p 0d20000	PDF
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,	Original	s29gl-n s29gl512n s29gl256n s29gl128n +3s29gl128p s29gl256p s29gl512p	PDF

32E00 Search Results

32E00 Price and Stock

Amphenol Corporation 1332E006FZ

SiTime Corporation 8A35032E-000AJG

Amphenol Corporation 1332E006FS

SiTime Corporation 8A35032E-000AJG8

Amphenol Corporation 1332E003MS

32E00 Datasheets Context Search

IA-EM02A

JS28F512M29

Spansion S29GL512N11

a22t

S29GL-N

7be0

S70GL01GN00

2B60000

M29EWL

JS28F00am29

S29GL512N datasheet

gl256N

SA418

A 27631

S29GL512N datasheet

JS28F512M29EWL

JS28F512

JS28F512M29

s29gl512

Spansion S29GL256N

A 27631

0D20000