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    ITT Interconnect Solutions M83513/28-E01NP

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    Amphenol Corporation M83513/28-E01NP

    Conn Micro D Subminiature Plug 31 Position 1.27mm Solder Panel Mount/Through Hole - Bulk (Alt: M83513/28-E01NP)
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    Glenair Inc M83513/28-E01NP

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    Interstate Connecting Components M83513/28-E01NP
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    Amphenol Corporation M83513/28-E01NT

    Conn Micro D Subminiature Plug 31 Position 1.27mm Solder Panel Mount/Through Hole - Bulk (Alt: M83513/28-E01NT)
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    328E01 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239 PDF

    MRW52602

    Abstract: MRW52102
    Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRW52102 Series The RF Line M ic ro w a v e Linear P o w er Transistors 6 dB 1 -2 GHz 3 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . d e s ig n e d p r im a r ily fo r la rg e -s ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s in th e 1 to 2


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    mrw52102mrw52602 PDF

    MOTOROLA 13003

    Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER


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    mrw3000trw3000motorola 13003f 13003+8tu f 13003f13003f 13005d 13003 t3003f3001f3005frs 3005 cl PDF

    TRW2301

    Contextual Info: MOTORCLA SC XSTRS/R F lE E D | t.3b7E5M 00 0 0 3 7 ^ 3 | I MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 2301 TRW 2301F The RF Line M ic r o w a v e P o w e r T r a n s is t o r s . . . d e sign ed primarily for wideband, large-signal output and driver amplifier sta ge s in


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    2301f100pf50fiftrw2301 PDF

    TRW52604

    Abstract: TRW52104 M 2530 motorola
    Contextual Info: MOTORCLA SC XSTRS/R F 15E D | b3b?254 00003^0 ? | MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T R W 521 04 Se rie s The RF Line Microwave Linear Power Transistors . . . d e s ig n e d p rim a rily fo r w id e b a n d , la r g e -s ig n a l ou tp u t a n d d riv e r a m p lifie r s t a g e s in


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    tic11trw52604trw52104m 2530 motorola PDF

    TRW54101

    Abstract: 120mA-load GP-13F TRW5
    Contextual Info: M Q T O R C L A SC XSTRS/R F 15E D | bBbVHSM 0006411 t. | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW54001 Series The RF Line M icrowave Linear Pow er Transistors . . . designed prim arily for w ideband, large-signal output and driver amplifier stages in the 1 to 4 GHz frequency range.


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    trw54001gp-14b3b7254trw54101+3120ma-loadgp-13ftrw5 PDF

    GP141

    Abstract: MRW53102 GP-141 MRW53402 TRW53102
    Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M R W 53102 Series The RF Line M ic ro w a v e Linear P o w e r T ra n sisto rs 7 TO 8 dB 1 -3 GHz 1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . desig n ed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in th e 1 to 3


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    trw53102gp141mrw53102gp-141+1mrw53402 PDF

    MRW2304

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW2304 MRW2304F The RF Line M icrowave Power Transistors . . . d esig n e d p rim a rily for larg e-sig n al output and d rive r am p lifier stages in the 1.5 to 3 GH z fre q u e n c y range. 8 dB 1.5-3 GHz 4 W ATTS M ICROW AVE


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    mrw2304mrw2304f10opf PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor PDF

    TRW53602

    Abstract: 1826s12 TRW53102 53602 PE 1938 TRW53202
    Contextual Info: M OTOROLA SC XSTRS/R F 15E 0 | b3t,72S4 00flfi4GS ü I MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T R W 53102 Se rie s The RF Line M icrowave Linear Power Transistors . . . d e sig n e d p rim arily fo r w ide b and , large -signal output an d driver am plifier sta g e s in


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    00flfi4gstrw536021826s12trw53102+353602pe 1938trw53202 PDF

    motorola 6820

    Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
    Contextual Info: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S


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    tw-200trw53001junct10nmotorola 6820+6motorola 7852motorola 8026motorola st 1076trw 77306840 1 motorolaic 8279 PDF

    53601

    Abstract: MRW53001
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW53001 Series The RF Line M ic ro w a v e Linear P o w e r Transistors . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 1 to 3 GHz fre q u e n cy range.


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    mrw53001trw53001mrw5300mrw53601+153601 PDF

    MRW2307F

    Abstract: MRW2307 328E01
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R W 2307 M RW 2307F The RF Line M icrow ave Power Transistors . . . designed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in the 1.5 to 3 GHz fre q u e n cy range. 8 dB 1 .5 -3 GHz 7 WATTS


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    2307ftrw230710opfmrw2307f+2mrw2307328e01 PDF

    TRW2304

    Abstract: ICB01 328F-01
    Contextual Info: MOTOROLA SC X S T R S /R F MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TRW2304 TRW2304F The RF Line M ic r o w a v e P o w e r T r a n s isto rs . . . d esigned primarily for wideband, large-signal output and driver amplifier sta ge s in the 1.5 to 3 GHz frequency range.


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    trw2304trw2304ft-33-cicb01+1328f-01 PDF

    MRW52001

    Abstract: 52601 MRW52501
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RW 52001 Series The RF Line Microwave Linear Power Transistors 6 dB 1 TO 2 GHz 1.5 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . designed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in the 1 to 2


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    trw52001itw-200mrw52001mrw52101+3mrw5260152601mrw52501 PDF