50FIF Search Results

Contextual Info: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

U12M4T

Abstract: PD-S707
Contextual Info: H E D Jl73l3ts GGISBSD S | COMPONENTS BURR BROUN CORP - B U R R -B R O W N I b OPA5Û1/883B SERIES I b OPA501VM/883B OPA501VM OPA501UM/883B OPA501UM REVISION A JANU ARY, 1989 High Current, High Power Military OPERATIONAL AMPLIFIER

ECG990

Contextual Info: bbSBTEa 00045H1 T 17E PHILIPS E C G INC T - 74-05-01 ECG990 Dual Pow er A u d io Am plifier S e m ic o n d u c to rs Features • 2W/channel • -6 5 d B ripple rejection, output referred • -6 5 d B channel separation, output referred • Wide supply range, 6—24V

TRW2301

Contextual Info: MOTORCLA SC XSTRS/R F lE E D | t.3b7E5M 00 0 0 3 7 ^ 3 | I MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 2301 TRW 2301F The RF Line M ic r o w a v e P o w e r T r a n s is t o r s . . . d e sign ed primarily for wideband, large-signal output and driver amplifier sta ge s in

Contextual Info: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling

HY2316000

Contextual Info: HY2316000 Series ••HYUNDAI 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316000 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS

1582a

Contextual Info: m w m , ^ E L i ü Final Electrical Specifications un « LT1374-SYNC TECHNOLOGY 4.5A, 500kHz S tep-D ow n S w itching R egulator F e b ru a ry 1998 K O T U fK S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ The LT 1374-SYNC is a 500kHz monolithic buck mode

HY5116164B

Abstract: HY5116164BJC wx19
Contextual Info: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed

Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

2211p

Contextual Info: Z T E X A R XR-2211 FSK Demodulator/Tone Decoder GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2211 is a monolithic phase-locked loop PLL system especially designed for data communications applications. It is particularly suited for F S K modem applications. It operates over a wide supply voltage

HYM581000M

Contextual Info: HYUNDAI ELECTRONICS SIE Mb750flß □ □ □ □ T I S IHYNK 2TG HYM581000 •Ï2YUNDA SEMICONDUCTO D . im 4L-. -. 1\ I X 8-Bit C M O s DRAM MODI 1.1 M431201B-OCT91 DESCRIPTION The HYM581000M is a 1M words by 8bits dynamic RAM module and consists o f eight

Contextual Info: HY U N D A I HYM536200A Series SEMICONDUCTOR 2M x 36-blt CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

HY638256T1

Abstract: HY638256 AM524 HY638256J15
Contextual Info: HY638256 -HYUNDAI CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees