321 SOT Search Results

Contextual Info: Philips Semiconductors bbS3^31 OQSSBTE 321 CATV amplifier modules U APX Product specification BGY584A; BGY585A — N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input

TDA7053

Abstract: S411 TDA7053A TDA7053AT msa711 tda 0096
Contextual Info: INTEGRATED CIRCUITS TDA7053A Stereo BTL audio output amplifier with DC volume control Objective specification Supersedes data of July 1994 File under Integrated Circuits, IC01 1995 May 08 Philips Semiconductors PHILIPS 711GÔHb OOflflMD? 321 This Material Copyrighted By Its Respective Manufacturer

Philips IC14

Abstract: 84cxxx S024L DIL20 PCA84C122 PCA84C122A sot146e philips remote control ic 14 pin philips application note 422 Data Handbook IC14
Contextual Info: NAPC/PHILIPS SEMICOND b^E T> • bbSB'ìSM 00^321*5 Ô3b « S I C 3 Preliminary specification Philips Semiconductors 8-bit microcontrollers for remote control transmitters PCA84C122; 222; 422; 622; 822 CONTENTS 1 FEATURES 1 FEATURES • 84CXXX CPU 2 GENERAL DESCRIPTION

TRANSISTOR BC 252

Contextual Info: • bb53131 DDEMMfl? 321 « A P X N AMER PHILIPS/DISCRETE BC868 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. applications. BC868/BC 869 is the matched complementary pair suitable for class-B audio output

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

sa2111

Abstract: 2691 SA1861 10-4m2
Contextual Info: P lu g s a n d S o c k e t s 2 p o le + E 28 2 36 39 7 321 CRS V ' , ' v. SA1861 ^ y—.y . .I, A . h .*-'. j i ~ 4 ~ ! 39 5 1 36.9 20 6 JP ) 09.5 Cable Entry SA2111 3/4 006 - 88 0/S Fax; 0 1 S 1 a *“ - SOT - 2 6 9 1

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: ZET EX S E M I C O N D U C T O R S ‘iSD D ^70570 D 0 D S 711 *\ • ZETB 95D 05711 N-channel enhancement mode vertical D M O S FET ZV N 321 0 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

9626

Abstract: 9622 transistor 9622 9623 9916 LTC1624 R393
Contextual Info: RELIABILITY DATA LTC1433/1434/1435/1436/1437/1438/1439 LTC1538/1539 LTC1624 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE NEWEST DATE CODE SIDEBRAZE PLASTIC DIP SOIC/SOT/MSOP SSOP/TSSOP 115 9601 39 9626 71 9714 409 9601 634 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH

78540

Abstract: LTC1624 R393 sot 326
Contextual Info: RELIABILITY DATA LTC1433/1434/1435/1436/1437/1438/1439 LTC1538/1539 LTC1624 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SIDEBRAZE PLASTIC DIP SOIC/SOT/MSOP SSOP/TSSOP NEWEST DATE CODE 115 9601 39 9626 219 9714 409 9601 782 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH

diode 321

Abstract: 2x200-0008D
Contextual Info: DSS 2x200-0008D IFAVM = 2x200 A VRRM = 8 V V F = 0.15 V OR-ing Power Schottky Rectifier Non isolated VRSM VRRM V V 8 8 miniBLOC, SOT-227 B A2 Type Anode 2 DSS 2x200-0008D A1 Common cathode Anode 1 Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5

UMFT313EV Development Module

Abstract: CAPC1608 RESC1608
Contextual Info: UMFT313EV Datasheet Version 1.0 Document Reference No.: FT_000762 Clearance No.: FTDI# FTDI Chip UMFT313EV Datasheet USB2.0 Hi-Speed Host Development Module General Purpose USB2.0 Hi-Speed USB Host Contoller 1 Introduction The UMFT313EV is a development module

ic 311 comparator

Abstract: 359 SOT23 OP AMP WITH 5 AMP OUTPUT micropower OP AMP MAX4242
Contextual Info: _ Op Am ps/Com parators Op Amps/Comparators, Product Tables and T re e s . 3-3 MAX961 MAX962 MAX963 MAX964 MAX965 MAX966

bt 44a

Abstract: Transistor 2TY npn photo transistor P042A
Contextual Info: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life

ltc1639

Abstract: diode d811 LTC1639-1CS8 DC444 Si7456DP Full-bridge converter mosfet 4800 RES 16K 025W 5 pe-68386 6.7UH
Contextual Info: DC444 DESCRIPTION QUICK START GUIDE Demo Circuit 444 provides an isolated 12V/20A from a 36 to 72VDC source. DC444 utilizes the LTC1922 controller to implement a zero voltage switched ZVS , phase shift, full-bridge converter with synchronous rectification. Adaptive ZVS circuitry controls the turn-on

Contextual Info: bbS3T31 QDE4M5Q 73T » A P X Philips Semiconductors NPN general purpose transistor BC817W; BC818W AMER PHILIPS/DISCRETE FEATURES Product specification b7E D PIN CONFIGURATION • High current CM a; • S -m in i package. 1 D ESCRIPTION NPN transistor in a plastic SOT323

811A SOT23-3

Contextual Info: ML6102 ML6102 Series Positive Voltage Detector Inverted Output 1 1 BC67DECF1 1 122345674891 2 2 2 2 1 3 Memory Battery Back-up Circuits Power Failure Detection Power-on Reset Circuit System Battery Life and Charge Voltage Monitor 3 3 3 3 A CMOS Low Power Consumption : Typical 1.0uAat

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 BCP56-10T1 bh16 BH-16 SOT
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

marking CODE GV* SOT23-5

Abstract: marking 321 SN321 321 SOT opamp device marking 321 sot25 op-amp sot-25 321
Contextual Info: Low Power Single OP-AMP Semiconductor SN321 Description http:// www.auk.co.kr The SN321 consists of a high gain Internally frequency compensated operational amplifier designed to operate from a single power supply over a wide range of voltage. The input common mode range includes ground and the device is

BAV99 SOT 23

Abstract: BAV99 ON Semi E13 diode BAV99 IR10 VF-10 P300
Contextual Info: BAV99 & Discrete POWER & S ign al Technologies National S e m i c o n d u c t o r " BAV99 C O N N E C T IO N D IA G R A M J0L AT ur td SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

SOT23-5 MARKING 321

Abstract: SN321 marking 321 sot25 op-amp marking R4 opamp device marking 321 sot-25 321
Contextual Info: Low Power Single OP-AMP SN321 Description Semiconductor The SN321 consists of a high gain Internally frequency compensated operational amplifier designed to operate from a single power supply over a wide range of voltage. The input common mode range includes ground and the device is

transistor et 455

Abstract: ZIX690B T092 ZSM561 T0921 diode L04C
Contextual Info: SUPPLY VOLTAGE ZSM561 MONITOR ISSUE 2- NOVEMBER 1995 DEVICE DESCRIPTION The device is available in a T092 package for through hole applications as wall as S08 and SOT223 for surface mount requirements. The ZSM561 is a three terminal under voltage monitor circuit for use in microprocessor

transistor R2A

Abstract: a38 TRANSISTOR
Contextual Info: PNP small signal transistor Die no. A-38 These epitaxial planar PNP silicon transistors are gold doped. Dimensions Units : mm Features • available in the following packages: — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59), see page 300 • collector-to-emitter breakdown

Dell L

Contextual Info: ZONE RET A B C DESCRIPTION INITIAL DRAWING RELEASE PROVIDED TWO SOLDER TAIL LENGTHS. ADDED NOTE 5 k 6 PROVIDED FOUR CUT-OUT RELIEF ON THE COVER: ADDED NEW PART NO. ECO. NO. HATS 1655 11/28/94 1735 4/12/85 2072 9/5/95 18 EQUAL S P A C E S ? § L 4N&l-ACf?UM8