31MILS Search Results

ATC 600F

Abstract: 200B MS3023
Contextual Info: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term

Contextual Info: RF2363 Preliminary

     
      • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems
    4 GENERAL PURPOSE AMPLIFIERS 0.365

Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT, 8-Lead „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic

6064 aluminium data sheet

Abstract: aluminium alloy 6012 MAX6061-6068 SOT-77 5630 SOT23 6062 aluminium data sheet MAX6018 MAX6035 MAX6101 MAX6101EUR
Contextual Info: MAX6101EUR Rev. A RELIABILITY REPORT FOR MAX6101EUR PLASTIC ENCAPSULATED DEVICES February 14, 2003 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl

lm6642

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE 277 marking code 604 SOT23-6 sumitomo epoxy Nitto UV MARKING 5501 SOT23-5 sot23-6 marking code 593 nitto UV tape NS Package Number MF05A operational amplifier discrete schematic
Contextual Info: LMH Products Qualification Package LMH6642, LMH6643, LMH6645, LMH6646, LMH6647, LMH6654, LMH6655 and LMH6672 National's LMH66xx family of operational amplifiers is a new series of high-speed products based on the VIP10 process. The first members of the

Contextual Info: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for

Contextual Info: NZ5638 NZ5638 Preliminary Data Sheet Multiband Power Amplifier Module TD-LTE Band 7, 38, 40 & 41 Preliminary Data Sheet Description Features The NZ5638 is a 16-pin power amplifier module developed for LTE applications. With advanced InGaP HBT technology, the module supports multi-band 2300-2690MHz for

transistor j380

Abstract: J225 J22 transistor 200B AWG20 M210 MS3022 J380
Contextual Info: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for

RF2363

Abstract: lna 1900mhz SOT-23-8 package AT/9450 transistor
Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Typical Applications • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems Product Description 0.15 0.05 1.59 1.61 0.365 TEXT* The RF2363 is a dual-band Low Noise Amplifier

GSM LNA

Abstract: 5Ghz lna transistor datasheet RF2363 4201 SOT-8 PIN 8c122
Contextual Info: RF2363 Preliminary 4 DUAL-BAND 3V LOW NOISE AMPLIFIER Typical Applications • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems Product Description 4 GENERAL PURPOSE AMPLIFIERS

6030

Abstract: MAX6061-6068
Contextual Info: MAX6100EUR Rev. A RELIABILITY REPORT FOR MAX6100EUR PLASTIC ENCAPSULATED DEVICES February 14, 2003 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl

Contextual Info: RF2363 Preliminary  '8$/%$1' 9 /2: 12,6 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ

Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Package Style: SOT, 8-Lead Features „ „ „ „ „ „ Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package

rf185

Abstract: SOT-23-8 package
Contextual Info: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Typical Applications • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems Product Description 0.15 0.05 1.59 1.61 0.365 TEXT* The RF2363 is a dual-band Low Noise Amplifier

Contextual Info: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term