MS3023 Search Results

ATC 600F

Abstract: 200B MS3023
Contextual Info: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term

MS3023

Abstract: J160
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS3023 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features • • • • • • • GOLD METALIZATION Pout = 3.0 W MINIMUM 2.0 GHz Gp = 7.8 dB

Contextual Info: MS3023 RF & Microwave Transistors General Purpose Amplifier Applications GENERAL DESCRIPTION The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class-C applications in the 1 ~ 2 GHz frequency range. Gold metallization and emitter ballasting provide long-term

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

MS3454

Abstract: MS3016 MS3453 MS3451 MS3021 MS3017 MS3384
Contextual Info: L-Band / S-Band Applications General Purpose 1000 - 4000 MHz PART NO. FREQ. Pout Pin GAIN T IC Vcc COB ejc PKG W Min (dB) Min (GHz) Min (W) (V) Max (°C/W) STYLE (%) Max (pF) MS3016 1 2 0.2 10 50 28 3.2 20 M211 MS3017 1 5 0.5 10 50 28 6.5 8 M211 MS3018 1