3106 DIODE Search Results

Contextual Info: VRSM IFAVM IFRMS IFSM VF0 rF Rectifier Diode = 5200 V = 1978 A = 3106 A = 25.6x103 A = 0.94 V = 0.284 mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1 Parameter

Contextual Info: 3106 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1 @Temp. (øC) (Test Condition)25

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)

diode 3106

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter

IR 3108

Abstract: 3104UF ca 3110 3102F 3102UF 3104F 3106F 3106UF 3108F 3108UF
Contextual Info: THREE PHASE BRIDGE FULL WAVE 70nS*150nS«3000nS RECOVERY V nW M = RWM IF = 3102 3104 3106 3108 3110 3102F 3104F 3106F 3108F 311 OF 2 0 0 -1000V 2.0A 3102UF 3104UF 3106UF 3108UF 3110UF • -• - • - Q A A A AC O- • !

diode 3106

Abstract: 3106 diode mb 3106 thermistor diode PJ
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi^SOO^b QÜDÔ77D 1 TXSA 3106 1f[ÜL{il?W[&iß3 electronic - &•* *TWrnotogtes r - H i- o s r I Preliminary »pacification» | CW -D ouble Heterostructure GaAIAs Laser Array Applications: • High optical power infrared source

24v active clamp forward converter

Abstract: Step-up PWM DC/DC Converter for Active Matrix LCD MAX17067
Contextual Info: 19-3106; Rev 0; 1/08 KIT ATION EVALU E L B AVAILA Low-Noise Step-Up DC-DC Converter The MAX17067 boost converter incorporates highperformance at 1.2MHz , current-mode, fixed-frequency, pulse-width modulation (PWM) circuitry with a built-in 0.15Ω n-channel MOSFET to provide a highly efficient

LA8200M

Abstract: LA8200 peak Current Mode Type II Compensation
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 12e D I imaik □□□310b LA8200M? M onolithic Linear TC 3106 Read/W rite Amplifier for FDD Use 2638 Features . On-chip diodes for head select . The time domain filter contains capacitors for time cq ^s; ant. ,ny value.

Contextual Info: 19-3106; Rev 0; 1/08 KIT ATION EVALU E L B AVAILA Low-Noise Step-Up DC-DC Converter The MAX17067 boost converter incorporates highperformance at 1.2MHz , current-mode, fixed-frequency, pulse-width modulation (PWM) circuitry with a built-in 0.15Ω n-channel MOSFET to provide a highly efficient

3106F

Abstract: 3106F 28 21P 3102F 3102UF 3104F 3104UF 3106UF 3108F 3108UF 3110UF
Contextual Info: b3E » • 1 5 1 4 6 5 4 DD D G S D ? 73b H V M I THREE PHASE BRIDGE FULL WAVE 70nS*150nS*3000nS RECOVERY 3102 3104 3106 3108 3110 3102UF 3104UF 3106UF 3108UF 3110UF 3102F 3104F 3106F 3108F 311 OF VO L T A G E M U L T I P L I E R S INC * VRWM = 2 0 0 -1000V

mb 3106

Abstract: SCHEMATIC 5kw power supply 30A SD101AWS Si4320DY Si4354DY Si4394DY Si4886DY SP6136 680KHZ
Contextual Info: SP6136 VCC UV VI N BST 16 15 14 13 12 GH 1 SP6136 2 16 Pin QFN 3mm x 3mm 3 6 7 PWRGD 11 SWN 10 ISP 9 ISN 8 SS 5 EN 4 COM P FEATURES • 5V to 24V Input step down converter ■ Up to 7A output in a small form factor ■ Highly integrated design, minimal components

106 25v

Abstract: ZC744 diode 3106 R 2.8 diode DSA003761 c30 diode
Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ZC744 ISSUE 2 – SEPTEMBER 94 DIODE PIN CONNECTION 1 1 CATHODE 2 2 ANODE E-Line TO92 Compatible ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL MIN TYP MAX UNIT Reverse Breakdown Voltage VR Reverse Voltage Leakage

Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION w2 ANO DE CATHODE ELECTRICAL CHARACTERISTICS at Tamb=25°C PARAMETER SYMBOL Reverse Breakdow n Voltage Vr MIN TYP MAX 30 UNIT V lf^=10|xA HA V r=25V Reverse Voltage Leakage

ECG3100

Abstract: lc 3101 led ECG3102 ECG3103 ECG3105 transistor p58 ECG3101 ECG3104 transistor p26 ecg 100 transistor
Contextual Info: Infrared Detector D io d e s ECG Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r IV Max. Dark Current ID »A) Min Light Current ILI/jA) Power Dissipation PD (mW) Rise Time tr (nS) Typ Detection Angle Typ Detection Wavelength (nm)

Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance

transistor TIP 320

Contextual Info: [*9 SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861N51/OPB861N55 PACKAQE DIMENSIONS The OPB 861N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN

5082-2080

Abstract: 5082-2826 5082-2835 MTTF 5965-8870E Y2272 DOD-HDBK-1686
Contextual Info: Passivated General Purpose Schottky Diodes Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the 1N5711/12 5082-2800/04/05

A635

Contextual Info: unm TECHNOLOGY LM 185- 1.2/LM385-1.2 Micropower Voltage Reference F€ATUR€S DCSCRIPTIOH • ■ ■ ■ The LM 18 5-1.2 is a two terminal band gap reference diode that has been designed for applications which require precision performance with micropower oper­

Contextual Info: _ LM185-1.2/LM385-L2 ' . Micropower Voltage Reference F€ATUR€S D C SC RIPTlO n • ■ ■ ■ Th e L M 1 8 5 -1 .2 is a two terminal band gap reference diode that has been designed for applications which require precision performance with micropower oper­

LT1034

Abstract: 385b12 4953 diode 107 10K 521 LM385-1 385B1 LM385H
Contextual Info: LM 185-1.2/LM 385-L2 TECHNOLOGY •»Micropower Voltage Reference F€ATUR€S DCSCRIPTIOn • ■ ■ ■ Th e L M 1 8 5 -1 .2 is a two terminal band gap reference diode that has been designed for applications which require precision performance with micropower oper­

j535

Abstract: 5353A RG 8506 5354B regulator ic 8503 5355B
Contextual Info: Zener Regulator Diodes P a rt N u m b er M ic ro s e m i Package O u tlin e D iv is io n 1N 4962US JA N 1 N 4 9 6 2 JA N 1 N 4 9 6 2 U S JA N S 1 N 4 9 6 2 JA N S 1 N 4 9 6 2 U S JA N T X 1 N 4 9 6 2 JA N T X 1 N 4 9 6 2 U S JA N T X V 1 N 4 9 6 2 JA N T X V 1 N 4 9 6 2 U S

SCHEMATIC 5kw power supply 30A

Abstract: schematic diagram converter input 12v to 24v 4a PowerPAK 1212-8 package, moisture sensitivity level mosfet ms 1307 SI2318 compensator for cuk converter CdS 18-50 kohm schematic diagram converter 12v to 24v 30a 10ME220SWG BAT54WS T/R
Contextual Info: SP6136 VCC UV VI N BST 16 15 14 13 12 GH 1 SP6136 2 16 Pin QFN 3mm x 3mm 3 6 7 PWRGD 11 SWN 10 ISP 9 ISN 8 SS 5 EN 4 COM P FEATURES • 5V to 24V Input step down converter ■ Up to 7A output in a small form factor ■ Highly integrated design, minimal components

Contextual Info: THREE PHASE FULL WAVE BRIDGES 70ns-3000ns Recovery • 2.0A - 5.0A ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current @TC (to) 55°C Volts Reverse Current @ Vrwm Forward Voltage (Ir) (Vf) 100°C 25°C

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM