A635 Search Results

Contextual Info: Data Sheet No. PD 96937 IRIS-A6359 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.

a6351

Abstract: smps circuit of ic a6351 IRIS-A6351 "a6351" hybrid ic pwm circuit diagram smps with mosfet smps control ic with 7 pin TOP smps control ic with 4 pin TOP A6351 pin voltage 6 PIN smps control ic
Contextual Info: Data Sheet No. PD 96936A IRIS-A6351 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.

A6359

Abstract: IRIS-A6359 smps control ic 16 pin smps control ic with 7 pin TOP 6 pin smps power control top mosfet
Contextual Info: Data Sheet No. PD 96937A IRIS-A6359 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.

a6351

Abstract: smps circuit of ic a6351 A6351 pin voltage IRIS-A6351
Contextual Info: Data Sheet No. PD 96936 IRIS-A6351 Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.

GCOY6101

Abstract: topled 2ma
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 570 nm, Low Current InGaAlP High Brightness Light Emitting Diode (570 nm, Low Current) F 0283C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 570 nm • Technologie:InGaAIP

SSD1353

Abstract: SSD1353U4 ROW130 Solomon Systech ssd1353 SA 9259 SB148 SB145 SSD1353U4R1 SB143 SC141
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1353 Advance Information 160RGB x 132 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change

mb90488b

Abstract: D412 transistor equivalent BB609
Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM44-10121-7E F2MC-16LX 16-BIT MICROCONTROLLER MB90480/485 Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90480/485 Series HARDWARE MANUAL The information for microcontroller supports is shown in the following homepage.

virtual surround dsp mcu

Abstract: thyristor BT 138 Fujitsu MB91F463N thyristor BT 605 MB91F463NB GP143
Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM71-10149-2E FR60 32-BIT MICROCONTROLLER MB91460N Series HARDWARE MANUAL FR60 32-BIT MICROCONTROLLER MB91460N Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site. This web site includes the "Customer Design Review Supplement" which provides the latest cautions on

Contextual Info: Board to Board Connectors FH Free Height 0.6mm Pitch Board to Board GIGA Connectors SMT Typed 4H Type Plug Assembly GIGA Type With Grounding Plate Acceptable Board Stacking Height=4mm/12mm Material and Finish : Housing — UL94V-0 rated heat resistant resin, natural

A4506

Abstract: C1406 C1905 C1156 B6106 B323 B32321 B32323 A6306
Contextual Info: AC Film Capacitors Motor Run B 32 321 / .23 UL Series – Construction Only UL 810 Construction Dielectric: polypropylene film Plastic case Polyurethane resin Features Self-healing properties Low dissipation factor High insulation resistance Typical applications

SSD1353

Abstract: GS33 25KHZ GS63 SA159 SC159 STMPE1208S oled ic a636 BL160128
Contextual Info: SPECIFICATIONS FOR LCD MODULE MODEL NO. BL160128BCRNHp$ VER01 OR MESSRS: _ ON DATE OF: _ APPROVED BY: _ BOLYMIN, INC.

Q-67220-C1447

Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 617nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (617 nm, High Optical Power) F 2000A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung

F1048A

Abstract: F1048B
Contextual Info: GaAlAs-Infrarot-Lumineszenzdiode 880 nm GaAlAs Infrared Emitting Diode (880 nm) F 1048A F 1048B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 25 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 400 x 400 µm2

GCOY6101

Abstract: osram topled
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 590 nm, Low Current InGaAlP High Brightness Light Emitting Diode (590 nm, Low Current) F 0347C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 590 nm • Technologie:InGaAIP

GCOY6101

Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 560 nm, Low Current InGaAlP High Brightness Light Emitting Diode (560 nm, Low Current) F 0292C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 560 nm • Technologie:InGaAIP

C1446

Abstract: osram topled DIODE 630
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch

GMOY6078

Abstract: Q65110A0136
Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2

osram power topled

Abstract: GMOY6088
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 605 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (605 nm, Enhanced Power) F 0281E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 605 nm

opto 101

Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 590 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (590 nm, Enhanced Power) F 0282E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 590 nm

0292E

Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 560 nm, Enhanced Power InGaAlP High Brightness Light Emitting Diode (560 nm, Enhanced Power) F 0292E Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 560 nm

GMOY6178

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2

DIODE 630

Abstract: GCOY6101
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, Low Current InGaAlP High Brightness Light Emitting Diode (630 nm, Low Current) F 0349C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Chipgröße 170 x 170 µm • Wellenlänge: 630 nm • Technologie:InGaAIP

A635

Contextual Info: unm TECHNOLOGY LM 185- 1.2/LM385-1.2 Micropower Voltage Reference F€ATUR€S DCSCRIPTIOH • ■ ■ ■ The LM 18 5-1.2 is a two terminal band gap reference diode that has been designed for applications which require precision performance with micropower oper­

FBRI 10-5 N

Contextual Info: Extract from the online catalog ZVIOK 1,5 Order No.: 3006506 Feed-through modular terminal block, Cross section: 0.14 mm² - 2.5 mm², AWG: 26 - 12, Connection type: Spring-cage connection,