30V N CHANNEL MOS FET Search Results

2SK2808-01MR

Contextual Info: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

2SK2806-01

Contextual Info: 2SK2806-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

Contextual Info: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

k 2750 MOSFET

Abstract: L027
Contextual Info: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

ups 017

Abstract: 2SK2688-01
Contextual Info: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

Contextual Info: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

12v power amplifier 30w

Abstract: 2SK2807-01L
Contextual Info: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications

Contextual Info: Panasonic Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

2SK1614

Contextual Info: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

2SK1606

Contextual Info: Panasonic Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

2SK1613

Contextual Info: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

2SK1610

Contextual Info: Panasonic Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)

IRLA 075

Abstract: 2SK1940-01 2SK1940 SC-65 T151 s48a 6avs LM050 ups S
Contextual Info: 2.SK1940-01 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIA SERIES Outline Drawings I Features 'High speed switching ' L ow on-resistance 'N o secondary breakdown ' Low driving power 'High voltage •V gs - ± 30V Guarantee 'Avalanche-proof

tz 1008-01

Abstract: mosfet kt 208 A277 T151 fci dh 22 U101a
Contextual Info: ÍSK1008-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -n SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • Islo secondary breakdown • Low driving power • High voltage • 7 gss = ± 30V Guarantee • Avalanche-proof

2SK1606

Abstract: A300012 1086v
Contextual Info: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450

2SK1612

Contextual Info: Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 800

2SK1608

Contextual Info: Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 500

2SK1605

Contextual Info: Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450

Contextual Info: Panasonic Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)

Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30

2SK1611

Contextual Info: Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications Unit VDSS 800 V Gate to Source voltage VGSS ±30 V DC

2SK1612

Contextual Info: Panasonic Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS Unit : rrnn I Features 4.2±0.2 ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic 03.1±O.1 I Applications ►High-speed switching (switching mode regulator)

Contextual Info: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30

2SK series

Abstract: 25C1 2SK1020 T151 3CA H
Contextual Info: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications