30V N CHANNEL MOS FET Search Results

30V N CHANNEL MOS FET Result Highlights (5)

Part	Manufacturer	Description	Download
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P	PDF
TK5R1A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS	Datasheet
TK155E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ	Datasheet
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL	Datasheet
TK5R3E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB	Datasheet

30V N CHANNEL MOS FET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK2808-01MR Contextual Info: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2808-01MR 2SK2808-01MR	PDF
2SK2806-01 Contextual Info: 2SK2806-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -	Original	2SK2806-01 2SK2806-01	PDF
Contextual Info: 2SK2808-01MR N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2808-01MR	PDF
k 2750 MOSFET Abstract: L027 Contextual Info: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2688-01 277mH k 2750 MOSFET L027	PDF
ups 017 Abstract: 2SK2688-01 Contextual Info: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017Ω ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2688-01 ups 017 2SK2688-01	PDF
Contextual Info: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2807-01L	PDF
12v power amplifier 30w Abstract: 2SK2807-01L Contextual Info: 2SK2807-01L,S N-channel MOS-FET FAP-IIS Series 30V > Features - 20mΩ ±35A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications	Original	2SK2807-01L 12v power amplifier 30w	PDF
Contextual Info: Panasonic Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)	OCR Scan	2SK1605	PDF
2SK1614 Contextual Info: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)	OCR Scan	2SK1614 capacitance155' 2SK1614	PDF
2SK1606 Contextual Info: Panasonic Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)	OCR Scan	2SK1606 -150V, 2SK1606	PDF
2SK1613 Contextual Info: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)	OCR Scan	2SK1613 capacitance155' 2SK1613	PDF
2SK1610 Contextual Info: Panasonic Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)	OCR Scan	2SK1610 2SK1610	PDF
IRLA 075 Abstract: 2SK1940-01 2SK1940 SC-65 T151 s48a 6avs LM050 ups S Contextual Info: 2.SK1940-01 FUJI POW ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIA SERIES Outline Drawings I Features 'High speed switching ' L ow on-resistance 'N o secondary breakdown ' Low driving power 'High voltage •V gs - ± 30V Guarantee 'Avalanche-proof	OCR Scan	2SK1940-01 SC-65 IRLA 075 2SK1940-01 2SK1940 SC-65 T151 s48a 6avs LM050 ups S	PDF
tz 1008-01 Abstract: mosfet kt 208 A277 T151 fci dh 22 U101a Contextual Info: ÍSK1008-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -n SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • Islo secondary breakdown • Low driving power • High voltage • 7 gss = ± 30V Guarantee • Avalanche-proof	OCR Scan	SK1008-01 SC-46 tz 1008-01 mosfet kt 208 A277 T151 fci dh 22 U101a	PDF

2SK1606 Abstract: A300012 1086v Contextual Info: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450	Original	2SK1606 2SK1606 A300012 1086v	PDF
2SK1612 Contextual Info: Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 800	Original	2SK1612 2SK1612	PDF
2SK1608 Contextual Info: Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 500	Original	2SK1608 2SK1608	PDF
2SK1605 Contextual Info: Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 16.7±0.3 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 450	Original	2SK1605 2SK1605	PDF
Contextual Info: Panasonic Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)	OCR Scan	2SK1607	PDF
Contextual Info: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30	Original	2SK1613	PDF
2SK1611 Contextual Info: Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications Unit VDSS 800 V Gate to Source voltage VGSS ±30 V DC	Original	2SK1611 2SK1611	PDF
2SK1612 Contextual Info: Panasonic Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS Unit : rrnn I Features 4.2±0.2 ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic 03.1±O.1 I Applications ►High-speed switching (switching mode regulator)	OCR Scan	2SK1612 2SK1612	PDF
Contextual Info: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30	Original	2SK1614	PDF
2SK series Abstract: 25C1 2SK1020 T151 3CA H Contextual Info: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications	OCR Scan	2SK1020 2SK series 25C1 2SK1020 T151 3CA H	PDF

30V N CHANNEL MOS FET Search Results

30V N CHANNEL MOS FET Result Highlights (5)

30V N CHANNEL MOS FET Datasheets Context Search

2SK2808-01MR

2SK2806-01

k 2750 MOSFET

ups 017

12v power amplifier 30w

2SK1614

2SK1606

2SK1613

2SK1610

IRLA 075

tz 1008-01

2SK1606

2SK1612

2SK1608

2SK1605

2SK1611

2SK1612

2SK series