2SK1607 Search Results

Contextual Info: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 2 0.7–0 +0.1 ● 3 0.4–0.05 in the high-speed mounting machine

Contextual Info: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct ● Supply 0.65 max. 14.5±0.5 reverse recovery period trr 0.85 ● Short 1.0 0.8 • Features

Contextual Info: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct in radial taping manner possible M Di ain sc te on na tin nc ue e/ d ● Supply 0.65 max.

2SK1607

Abstract: SC-65 2sk16
Contextual Info: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13

MA1U152A

Abstract: 2SK1607 2sk16 MA1U152
Contextual Info: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 1.5–0.05 Short reverse recovery period trr ● Small capacity between pins, Ct 0.95 1.9±0.1 +0.1 2 0.7–0 +0.1 ● 0.4–0.05 in the high-speed mounting machine

Contextual Info: Panasonic Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator)

Contextual Info: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 switching switching mode regulator ø3.2±0.1 3.5 high-frequency power amplification 2.0±0.2 Solder Dip ● High-speed 16.2±0.5

Contextual Info: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 450 V VGSS ±30 V Pulse ID ±13 A IDP ±26 A EAS* Avalanche energy capacity

2SK1607

Abstract: MA204WK MA205WK
Contextual Info: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Short 0.8 • Features capacity between pins, Ct 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible

MA175WK

Contextual Info: 2SK1607 Switching Diodes MA175WK, MA176WK Silicon epitaxial planer type Unit : mm 4.0±0.2 3.0±0.2 For switching circuits Small capacity between pins, Ct • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol MA175WK Reverse voltage (DC) MA176WK MA175WK

2SK1607

Abstract: SC-65
Contextual Info: Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 450 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS*

Contextual Info: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 0.95 2 0.7–0 +0.1 ● di p Pl lan nclu ea e se pla m d m des

G500 pulse

Contextual Info: 2SK1607 Switching Diodes MA132A Silicon epitaxial planer type Unit : mm 0.28±0.05 Short reverse recovery period trr ● Small capacity between pins, Ct ● Extra-small SS-Mini type package, enabling high-density mounting 1.60±0.1 0.80±0.05 1 +0.05 ● 1.60–0.03

2SK2324

Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)

2SK1603

Abstract: 2SK1601 2SK1606 2SK1580 2SK1582 2SK1583 2SK1584 2SK1585 2SK1586 2SK1588
Contextual Info: - 112 - ft f M £ tí: ffl € & m £ A £ 1 % E ft K V * (V) fr fê fr (A) % 3 P d /P c h (max) (A) (W) fö 4# 14 (Ta=25t3) (min) (V) (max) (V) Vd s I gss Vg s (VÏ (min) (A) (max) V d s (A) (V) Id (A) (V) (min) (S) %? Vds (V) 1d (A) 2SK1580 NEC SW MOS

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

OF03

Abstract: 2SK1263 2SK2377
Contextual Info: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

2sk2324

Abstract: 2SK2124 2SK2127 2sk2323
Contextual Info: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )

MN1280

Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SK2324

Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
Contextual Info: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I

2SK2277

Abstract: 2SK2580 220E4 2SK2015 2SK2014
Contextual Info: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128