30PFI Search Results

ADZ 12

Abstract: ZA32
Contextual Info: fax id: 1086 ^;aaazgg s t risaliiJF ;U I FlmCbti CY61256 PRELIMINARY 256K RAM/2M ROM Features tha t reduces po w e r con sum p tion by m ore than 99% when de ­ selected. • 1 .8 V -3 .3 V o p e ratio n • 32K x 8 RA M and 256K x 8 M ask RO M co m b in a tio n

Contextual Info: HM2142 4 0 9 6 -words x 1-b it Very High Speed Random Access Memory The H M 2142 is 4096-words x 1-bit very high speed read/write, random access memory developed for high speed systems such as pads and control/buffer storages. The fabrication process uses the Hitachi’s low capacitance, oxide

CY7C429-25PC

Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7
Contextual Info: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs

circuit diagram of speech to text

Abstract: 12 volt audio amplifier class circuit diagram block diagram of speech to text converter circuit diagram of text to speech circuit diagram sound effects SC-01-A SC-01 sc-01a speech synthesizer votrax
Contextual Info: SC-01 SPEECH SYNTHESIZER '"PoAa/X 1394 Rankin Troy, MI. 480 8 3 DATA SHEET Votrax CMOS Phoneme Speech Synthesizer G E N E R A L D E S C R IP T IO N The SC-01 Speech Synthesizer is a co m p le te ly self-contained solid state device. T his single ch ip p h o n e tic a lly synthesizes

Contextual Info: W D EDI8F3265C \ 64Kx32 SRAM Module ELECTRONIC DESIGNS, INC. 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM 64Kx32 bit CMOS Static module organized as 64Kx32. This module is constructed Random Access Memory

2SC4767

Abstract: 05t transistor
Contextual Info: Panasonic Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency pow er am plification • Features • High transition frequency fT. • Output of 0.6W is obtained in the VHF band f=175MHz . A bsolute M axim um Ratings (Ta=25°C) Symbol

siemens mov all range

Abstract: intel 80c535 n
Contextual Info: 47E D • 023SbDS OOaô'ID? b » S I E G SIEMENS AKTIENGESELLSCHAF T- s SAB 80C515/80C535 8-Bit CMOS Single-Chip Microcontroller Advance Inform ation SAB 80C515 / 80C515-16 CMOS microcontroller with factory mask-programmable ROM SAB 80CS35 / 80C535-16 CMOS microcontroller for external ROM

Contextual Info: EDI8F3265C 64Kx32 SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

Contextual Info: 82S136/82S136A-F.N • 82S137/82S137A-F.N DESCRIPTION FEATURES The 82S136 and 82S137 are fie ld p ro g ra m ­ mable, w hich means th a t custom patterns are im m e diate ly available by fo llo w in g the fusin g procedu re given in th is data sheet. The standard 82S136 and 82S137 are su p ­

STPIC6D595

Abstract: STPIC6D595M STPIC6D595MTR STPIC6D595TTR TSSOP16 2340UA
Contextual Info: STPIC6D595 Power logic 8-bit shift register Features • Low RDS on : 4Ω typ ■ Eight 100mA DMOS outputs ■ 250mA current limit capability ■ Device are cascadable ■ Low power consumption DIP-16 Description SO-16 This STPIC6D595 is a monolithic, mediumvoltage, low current power 8-bit shift register

MARK 8E diode

Abstract: EDI8F3265C15MMC EDI8F3265C15MZC EDI8F3265C20MMC EDI8F3265C20MZC EDI8F3265C25MMC EDI8F3265C25MZC jedec 64-pin simm
Contextual Info: EDI8F3265C 64Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4

B057r

Abstract: cv7c130 CY7C130 CY7C131 CY7C140 CY7C141 Zl13
Contextual Info: CYPRESS SEMI CONDUCTOR 4bE D • 2 5 0 ^ 2 ''-T ^ C r L V O * ODDbBMO 1 E S C Y P C Y 7 C 1 3 0 /C Y 7 C 1 3 1 C Y 7 C 1 4 0 /C Y 7 C 1 4 1 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM Features Functional Description • 0,8-micron CMOS for optimum

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20825-1E FLASH MEMORY CMOS 8M 1M X 8 MBM29LV008T/MBM29LV008B • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands *• * Uses same software commands as E2PROMs

82S137

Abstract: r2 137 82S136 GL 137A 82S137AF
Contextual Info: 82S136/82S136A-F.N • 82S137/82S137A-F.N DESCRIPTION FEATURES The 82S136 and 82S137 are field p ro g ra m ­ mable, w hich means th a t custom patterns are im m e diate ly available by fo llo w in g the fusin g procedu re given in th is data sheet. The standard 82S136 and 82S137 are su p ­

N82HS641

Abstract: SIGNETICS* Generic II fusing procedure
Contextual Info: Philips Components-Signetics 82HS641C Document No. 853-1468 ECN No. 00340 Date of Issue September 7,1 990 Status Product Specification 64K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82HS641C is field programmable, which means that custom patterns are

HD614022

Abstract: S8Y1 rf tube sealer Murata CSA2.000MK YA11 csa2.000mk hitachi hmcs40 LB204 100T2 hitachi pmos microcomputer
Contextual Info: H I T A C H I / n C U / f l P U I f l E D • 4 4 i b 2 4 O O l b b f l ? f l H M CS402C H D614 0 2 2 ,« «^ H MCS402CM HD614025)/ H M CS402AC ( H D614028) DESCRIPTION The HMCS402C/CL/AC are CMOS 4-bit single-chip micro­ computers with high performance and low power dissipation.

A12C

Abstract: A14C CYM1464 cs 2502
Contextual Info: YPRESS SEMICONDUCTOR Mb E \ T -4 6 -2 3 -1 4 CYPRESS SEMICONDUCTOR Features Hlgh-density 4-megabit SRAM module High-speed CMOS SRAMs — Access time of 20 ns Low active power — 1.93VV max. JEDEC-compatible pinout 32-pln, 0.6-inch-ttide DIP package TTL-compatible inputs and outputs

RJ 000002 gel

Abstract: marking FAT SMEW ERAA MARKING CODE LH28F320S5HB-L90 erase problem
Contextual Info: SHARP LHF32K16 1 CONTENTS PAGE PAGE 1 INTRODUCTION. 3 5 DESIGN 1.1 Product 5.1 Three-Line Output Control.31

Galvanic Skin Response Sensor

Abstract: AD293A AD294 HY20A HY20 AD293
Contextual Info: -. W ANALOG DEVICES HybridIndustrial/ MedicalIsolationAmplifier AD293/AD294 I I FEATURES High Common-Mode Voltage: AD293 :!:2500V peak max, cont. AD294 :!:3500 peak max, cont.; :!:8000V peak max Pulse Nonlinearity: :!:0.05% max AD293B Adjustable Input & Output Gain: 1VN to 1000VN

82S181A

Contextual Info: Philips Components-Signetics Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products DESCRIPTION The 82S181 and 82S181Aarefield programmable, which means that

TME 87

Abstract: TME 87 I 46/SMC 5/TME 87 I TME 87 i 3
Contextual Info: EDI8F3265C ^ E D L 64Kx32 SRAM Module ELECTRONIC 06SIGN& MC. 64Kx32 Static RAM CMOS, High Speed Module F e a tu r e s 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM Random Access Memory module organized as 64Kx32. This module is constructed

Contextual Info: SIEM ENS 8-Bit Single Chip Microcontroller SAB 83515-4 Preliminary Data SAB 83515-4 SAB 83515-4-T3 SAB 83515-4-T4 M icrocontroller with factory m ask-programmable ROM ext. tem perature range: - 40 to 85 ”C ext. tem perature range: - 40 to 110 "C • 16 K x 8 ROM

equivalent diode no. for diode by 127

Contextual Info: STPIC6C595 Power logic 8-bit shift register Features • Low RDS on : 4Ω typ ■ 30mJ avalanche energy ■ eight 100mA DMOS outputs ■ 250mA current limit capability ■ 33V output clamp voltage ■ Device are cascadable ■ Low power consumption SO-16