30MA 40V NPN Search Results

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

2n4494

Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
Contextual Info: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495

TIP31

Abstract: TIP31A TIP31B TIP32 TIP32B
Contextual Info: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

Contextual Info: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

TIP31

Abstract: 103 MI tip312 TIP31A TIP32 TIP32A
Contextual Info: TIP31,2 SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

Contextual Info: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA

2N2369A

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

ts 4141 TRANSISTOR

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

TS 4140

Abstract: 2N2369ADCSM
Contextual Info: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

4 npn transistor ic 14pin

Abstract: D0183-01E 14pin npn transistor quad transistor PMI 14-PIN CERAMIC DIP TM325 0DQ7407 d0183
Contextual Info: A N AL OG DEVICES/ PHI DIV OS GfilbôDS 0 G G 7 4 0 7 3 MAT-04/883 MATCHED MONOLITHIC PMp QUAD TRANSISTOR P r e c is io n M o n o lith ic s In c . 1.0 SCOPE This specification covers the detail requirements for a quad monolithic NPN transistor. It is highly recommended that this data sheet be used as a baseline for new military or

MHQ2222

Contextual Info: MHQ2222 MECHANICAL DATA Quad Dual-In-Line NPN Silicon Transistors Dimensions in mm inches 0.457 ± 0.102 (0.018 ± 0.004) 14 FEATURES 8 • • • V(BR)CEO = 40V (Min) Hermetic Package Screening Options Available APPLICATIONS 1 2.134 (0.084) 7 • • General Purpose Switching

MHQ2222

Contextual Info: MHQ2222 MECHANICAL DATA Quad Dual-In-Line NPN Silicon Transistors Dimensions in mm inches 0.457 ± 0.102 (0.018 ± 0.004) 14 FEATURES 8 • • • V(BR)CEO = 40V (Min) Hermetic Package Screening Options Available APPLICATIONS 1 2.134 (0.084) 7 • • General Purpose Switching

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N3725

Abstract: transistor 2N3725 2N3724 2n3725a
Contextual Info: 2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications.

Contextual Info: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP31 █ APPLICATIONS Mediuｍ Power Linear switching Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃

18P4G

Abstract: 20P2N-A M54513FP M54513P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

PN3567

Contextual Info: PN3567 PN3567 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted

Contextual Info: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS IN/IICRO ELECTRONICS CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ABE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED EOR POWER AMPLIFIERS AND

TIP30B

Abstract: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30C tg425
Contextual Info: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWEK TRANSISTORS ei— EOTRorsiiGS m ic r o CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND

TIP29

Abstract: TIP30
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30