30AUG2002 Search Results

M58BW016xB

Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers

Contextual Info: o CD CM 7.20 + 0.15 O I-. M" T O LO o +1 LO 00 + CN 1.45 o o +1 n a: t] 0.2 + 0.05 SECTION A— A 1 5 i A Z-l NOTE : 1. MATERIAL HOUSING THERMOPLASTIC, U L 9 4 V -0 , BLACK COLOR. PHOSPHOR BRONZE. CONTACT 2. FINISH ; 8 // ” MIN. GOLD PLATED ON CONTACT AREA,

Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V 28 28 ■ PIN COMPATIBLE with M27C256B ■ LOW POWER CONSUMPTION:

Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)

la 7913

Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)

Q002

Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Contextual Info: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

m27c

Abstract: M27C25
Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b

JD20

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - D RELEASED FOR PUBLICATION f r 5 c “ ID E N T IF IC A T IO N N U M B E R MAGNET WIRE RANGE t 1 f ALL RIGHT5 RESERVED. BY TYCO ELECTRONICS CORPORATION. r “ ^ 15 FOR 3 .2 5 3 .2 4 7 0 .5 1 h— 0 . 8 1 3 ± 0 . 0 2 5

M58BW016BB

Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers

M27C256B

Abstract: M27W256 PDIP28 PLCC32
Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V 28 28 ■ PIN COMPATIBLE with M27C256B ■ LOW POWER CONSUMPTION:

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

FDIP28WB

Abstract: JESD97 M27C256B M27W256 PDIP28 PLCC32
Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ 28 28 Pin Compatible with M27C256B 1 1 ■ Low Power Consumption:

M58BW016

Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)

Contextual Info: M27W512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current

M58BW016BB

Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
Contextual Info: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers

Contextual Info: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ Pin Compatible with M27C256B ■ Low Power Consumption:

Contextual Info: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz

M58BW016

Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)

PLCC32

Abstract: J-STD-020B M27C512 M27W512 PDIP28 11PROGRAMMING
Contextual Info: M27W512 512 Kbit 64K x8 Low Voltage UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ 2.7 to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0 to 3.6V – 80ns at VCC = 2.7 to 3.6V PIN COMPATIBLE with M27C512

1N914

Abstract: M27C512 M27W512 PLCC32 M27C512 ST
Contextual Info: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz

Q002

Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)

Q002

Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
Contextual Info: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)