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30N20 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
30N20		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1

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TT Electronics plc PSS230N201Y09W103 -10÷70°C; 10kΩ; Charact: linear
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	PSS230N201Y09W103		732		54	1 - 10 - 100 $1.65 1000 $1.33 10000 $1.33	Buy Now
TT Electronics plc PSS230N200G09B103 10kΩ; single turn; ±20%; linear; THT; -10÷70°C
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TME	PSS230N200G09B103		246		54	1 - 10 - 100 $1.65 1000 $1.49 10000 $1.49	Buy Now
IXYS Corporation IXTQ130N20T Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
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TME	IXTQ130N20T		30		1	1 $10.31 10 $8.20 100 $7.36 1000 $7.36 10000 $7.36	Buy Now
IXYS Corporation IXFR230N20T Transistor: N-MOSFET; unipolar; 200V; 156A; 600W; ISOPLUS247™
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TME	IXFR230N20T		11		1	1 $29.30 10 $23.35 100 $21.11 1000 $21.11 10000 $21.11	Buy Now
IXYS Corporation IXFN230N20T Module; single transistor; 200V; 220A; SOT227B; screw; Idm: 630A
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TME	IXFN230N20T				1	1 $35.00 10 $32.79 100 $32.79 1000 $32.79 10000 $32.79	Get Quote

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30N20 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N20 Preliminary Power MOSFET 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can	Original	30n20 30n20l-tf2-t 30n20g-tf2-t o-220f2 +1qw-r502-823	PDF
30N20G Abstract: 30n20 30N2 AN569 NTP30N20 NTP30N20G Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	ntp30n20 o-220 tpv10 ntp30n20/d +530n20g 30n20 30n2 an569 ntp30n20g	PDF
RAS 0510 SUN HOLD Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.	Original	mid-1990s ras 0510 sun hold relay ras 1210 sun hold ras 0510 +7relay ras 0510 ras 0510 sun hold ras 0910 sun hold ras 0610 erf 2030 ras 0610 relay 45n03	PDF
SMD diode N20 Abstract: IXFH58N20 30n20 Contextual Info: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2	OCR Scan	ixfh58n20 50n20 42n20 58n20 +4o-247 h42n20 smd diode n20 30n20	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	vp1204n tp8p08 5001d vp1206n +141208n 5002d 1209n vp1209n irfd1z3 equivalent 8n60 equivalent tp8n20 tp8n10 siemens semiconductor manual what is comparable with irf 3205 2n6823 irf8408 mtm5n90 designers datasheet smps cook circuit	PDF
Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	ntp30n20 ntp30n20/d	PDF
Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	ntb30n20 ntb30n20/d	PDF
30N20G Abstract: 30n20 ntb30n20t4g 30N2 NTB30N20T4 418B-04 AN569 NTB30N20 NTB30N20G Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	ntb30n20 ntb30n20/d 30n20g 30n20 +6ntb30n20t4g 30n2 ntb30n20t4 418b-04 an569 ntb30n20g	PDF