309A Search Results

Hitachi DSA00164

Contextual Info: HM514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word × 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8 µm CMOS process

m514265

Contextual Info: HM514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word x 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS process

Hitachi DSA00776

Abstract: HM51 HM514265C HM514265CJ-6 HM514265CLJ7
Contextual Info: HM514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word × 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8

HM51

Abstract: HM514265C HM514265CJ-6 Hitachi DSA0015
Contextual Info: HM514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word × 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8

IEC 60169-2

Abstract: IEC 60169-2 F din 45325 right angle plug 60169-2
Contextual Info: TECHNICAL DATA SHEET IEC antenna connectors DIN 45325 27S204-309A1 RIGHT ANGLE PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-2, DIN 45325 Documents Assembly instruction 27 D3 Material and plating RF_35/12.04/3.0

HM51

Abstract: HM514265C HM514265CJ-6
Contextual Info: HM514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 262,144-word × 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8 µm CMOS process

LL-309AGM2E-001

Contextual Info: LUCKY LIGHT Features ♦ ♦ ♦ ♦ Standard T-1 diameter package Wide viewing angle General purpose leads Reliable and rugged Package Dimension: Part NO. Lens Color LL-309AGM2E-001 White Diffused Source Color Orange & Green Notes: 1. All dimensions are in millimeters inches .

HD74HC00

Abstract: HD74HC1G00 Hitachi DSA00160
Contextual Info: HD74HC1G00 2–input NAND Gate ADE-205-309A Z 2nd. Edition December 1999 Description The HD74HC1G00 is high speed CMOS two input NAND gate using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series. The internal circuit of

HM514265CLJ7

Abstract: TB125
Contextual Info: HM514265C Series HM51S4265C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-309A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4265C is a CMOS dynamic RAM organized 2 6 2 ,144-word x 16-bit. HM51(S)4265C has realized higher density, higher performance and various functions by employing 0.8

Contextual Info: ARK-LE5 CORPORATION D E PT ] 1 2 3 i 4 PART NAME: TERMINAL, CUSTOMER DRAWING W A T E R T O W N , MA PART NO: FEMALE MATERIAL PART NUMBER 5 6 7 8 9 10 11 12 NC JZ 3 5 0 0 H 309A/-6 FINISH 309A-6 .0 4 ± .001 THICK BRASS CA26000, RI5T 83.0-86.5 PRETINNED

vacuum tube amplifier

Abstract: OT100 309A noise suppressor cap Western Electric tube e 80 cc OT-100 Scans-0017393
Contextual Info: Western Electric 3 0 9 A V acuum T ube Classification—Voltage amplifier, variable-mu, suppressor-grid pentode with in­ directly heated cathode T h e 309A t u b e is especially d e s ig n ed to m in im iz e a u d io -f r e q u e n c y d is t u r b a n c e s arising in th e

Contextual Info: 8 7 D R W NO. 6 C9 5 0 - 3 0 9 A - 5 0 0 ZONE ALL TABLE 1 IMPEDANCE DESCRIPTION PLATING DIM "K" 950-309A-B1B 950-309A-B1C Ni S U L F A M A T E , S T A N D A R D G O L D , L E A D E D Ni S U L F A M A T E , H I G H G O L D , L E A D E D 950-309A-B1D 950-309A-B1E

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2SA850

Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

N4700 40KV

Abstract: 40KVDC capacitor 10kv 2200 N4700 202k capacitor N4700 202k N4700 40KV 202k
Contextual Info: LEADED CAPACITORS, NETWORKS & HV CAPACITORS HIGH VOLTAGE CAPACITORS 10kV to 40kVDC E.I.A. CLASS I DHS Series Murata Electronic’s new High Voltage Ceramic Capacitors DHS N4700 Series is designed to meet the stringent requirements of high voltage applications and

MDA980-1

Abstract: MDA990-1 MDA990-6 MDA980-6 309A-02
Contextual Info: MDA980-1 thru MDA980-6 MDA990-lthru MDA990-6 M M O T O R O L A Designers Data Sheet R E C TIFIE R ASSEMBLY . . . u tiliz in g in d iv id u a l v o id -fre e m o ld e d M R 2 5 0 0 Series re c tifie rs , SIIMGLE-PHASE FULL-W A VE BRIDG E in te rc o n n e c te d and m o u n te d on an e le c tric a lly isolated a lu m in u m

MDA3500

Abstract: ltsj
Contextual Info: M MDA3500 series M O T O R O L A R E C T IF IE R A S S E M B L Y . . . u tiliz in g in d iv id u a l void -free m o ld ed M R 2 5 0 0 S e rie s re c tifie rs , in te rc o n n e c te d and m o un ted on an e le c tric a lly iso la ted a lu m in u m h eat sin k by a high th e rm a l-co n d u c tiv e e p o x y resin.

FUSE 1000v, 250a

Abstract: TS35-rail a 2761 TW35 ES35 41056 41126 65a 600v SR16 SR6-10
Contextual Info: DIN Rail Terminals Cat. No. Earth terminal SR SR2.5 SRU2.5 SR4 SRU4 SR6-10 SR16 Beige 50.41296.2 50.41030.2 50.41001.2 50.41015.2 50.41005.2 50.41050.2 Blue – – 50.41001.5 – Green/yel SRSL2.5-T35 Cat. No. 50.41056.2 – – SRSL4-T35 SRSL10-T35 SRSL16-T35

309ACJ

Contextual Info: DG308A/DG309 JJJ DG308A/DG309 HARRIS S E M I C O N D U C T O R Quad Monolithic SPST CMOS Analog Switches GENERAL DESCRIPTION FEATURES The DG308A/DG309 quad monolithic SPST CMOS switches are latch-proof and are designed to block signals up to 30 volts peak-to-peak when OFF. Featuring low ON

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: CITIZEN MHz RANGE CRYSTAL UNITS PLASTIC SURFACE MOUNT TYPE 309A/CM309B (1,OOOpcs/reel) • FEATURES: • Being of the miniature SMD type and featuring high efficiency in mounting, the CM309S is ideal for application to high-density circuit boards. • As it incorporates a heat-resisting packaged cylin­

Contextual Info: PGA309-HT www.ti.com SBOS687A – OCTOBER 2013 – REVISED DECEMBER 2013 VOLTAGE OUTPUT PROGRAMMABLE SENSOR CONDITIONER Check for Samples: PGA309-HT FEATURES 1 • • • • 2 • • • • • • • • Complete Bridge Sensor Conditioner Voltage Output: Ratiometric or Absolute

MBRM120T3

Abstract: 68uF 10V SANYO 47pF 50V NPO CR16-3162FM SILICONIX Si9801DY MMSD914T1 EEFUEOG181R BD 1206 CR16-303JM r025
Contextual Info: A B C D E 4 4 E2 SYNC/FCB E3 RUN/SS R1 100K E4 +VIN C1 68uF,10V POSCAP R2 0.025 1206 2.8V to 8.5V + C2 47pF E5 GND 1 3 5 2 4 6 HEADER 3X2 1.8V 2.5V 3.3V VIN 8 5 VFB TG 7 BG 6 GND 4 R8 71.5K 1% C7 100pF 2 E6 +VOUT 1.5V/1.8V/2.5V/3.3V 2.5Aavg/3Apk 4 Q2A Opt.