303MW Search Results

HM48416AP15

Abstract: rc230
Contextual Info: HM48416AP-12, HM48416AP-15 HM48416AP-20 16384-word X 4-bit Dynamic Random Access Memory • • • • • • • • • FEATURES 16384-w ord x 4-bit Organization Single 5V ±10% Low Power; 303mW Active, 20mW Standby High speed: Access Time 120ns/150ns/200ns (max)

MAS 10 RCD

Abstract: HM48416AP-15 HM48416AP HM48416AP-12 HM48416AP-20 TI041 Hitachi Scans-001
Contextual Info: HM48416AP-12, HM48416AP-15 HM48416AP-20 16384-word X 4-bit Dynamic Random Access Memory • FEA TU RES • 16384-word x 4-bit Organization • Single 5 V ±10% • Low Power; 303mW Active, 20mW Standby • High speed: Access Time 120ns/150ns/200ns (max)

HM48416AP-20

Abstract: HM48416AP HM48416AP15 HM48416 NS 6 W 183 T HM48416AP-12 HM48416AP-15 Hitachi Scans-001 CSH120
Contextual Info: HM48416AP-12, HM48416AP-15 HM48416AP-20 16384-word X 4-bit Dynamic Random Access Memory • • • • • • • • • FEATURES 16384-word x 4-bit Organization Single 5V ±10% Low Power; 303mW Active, 20mW Standby High speed: Access Time 120ns/150ns/200ns (max)

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

D-50

Abstract: MSM5117400 MSM5117400D MSM5117400D-50 MSM5117400D-60 MSM5117400D-70
Contextual Info: O K I Semiconductor This version:Apr,1999 M S M 5 1 1 7 4 0 0 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E TYPE D ESC R IP TIO N The MSM5117400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

AEG 4489

Abstract: marking ABB 4-Pin MAXIM TOP MARKING MAX6408BS22-T MAX6411BS35-T AFL Marking marking AAW MAX6407 MAX6408 MAX6411
Contextual Info: 19-2041; Rev 1; 8/01 Voltage Detectors in 4-Bump 2 X 2 Chip-Scale Package Features The MAX6406–MAX6411 is a family of ultra-low power circuits used for monitoring battery, power-supply, and regulated system voltages. Each detector contains a precision bandgap reference comparator and is

374C

Contextual Info: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

MAX2207

Abstract: MAX2206 MAX2206EBS MAX2207EBS MAX2208 MAX2205 MAX2205EBS
Contextual Info: 19-2015; Rev 1; 4/02 KIT ATION EVALU E L B A IL AVA RF Power Detectors in UCSP Features The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

Contextual Info: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of

Contextual Info: - PRE LIM IN AR Y- April 1996 Edition 2.2 FUJITSU PRO DUCT PROFILE SHEET M B 8 14405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

mb81416

Contextual Info: F U JIT S U MOS Memories • MB81416-10, MB81416-12, MB81416-15 NMOS 65,536-Bit Dynamic Random Access Memory D escription The Fujitsu MB81416 is a fully decoded, dynam ic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as

IS-98-A

Abstract: UCSP4 marking B44
Contextual Info: 19-2015; Rev 6; 9/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

81416

Abstract: MM1414 MBB1416-10 MM1414 APPLICATION NOTE MB81416-12 MB81416 MB81416-10 tlc 1125 MB81416-15 81416-12 fujitsu
Contextual Info: F U J IT S U MOS Memories MB81416-10, MB81416-12, MB81416-15 NMOS 65,536-Bit Dynamic Random Access Memory D e s c r ip t i o n The F u jits u MB81416 is a fu lly deco ded, d y n a m ic NM O S random a c cess m em ory organized as 16384 w o rd s by 4-bits. The d e s ig n is

TC55257

Abstract: tc51832fl-10 tc51832fl 128X8 A12C TC51832 TC51832F TC51832P TC51832PL-10 TC51832SPL-10
Contextual Info: ,_ J TOS H IB A : _ L O G I C / M E M O R Y 4SE D • llg r iHii ^0^7246 D025D11 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM □ ■TOSS* - - iDESCRIPTIONl The TC51832 Family is a 256K bit high-speed CMOS Pseudo-Static RAM organized as 32,768

800MHz CDMA Handset Circuit Diagram

Abstract: IS98A MAX2205 MAX2205EBS MAX2206 MAX2206EBS MAX2207 MAX2207EBS MAX2208
Contextual Info: 19-2015; Rev 1; 4/02 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP Features The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

KM44C1003C

Abstract: 44C1003 RAS 2410
Contextual Info: CMOS DRAM KM44C1003C/CL/CSL 1M x 4 B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1003C/CL/CSL-5 tR A C tC A C tR C 50ns 13ns 90ns KM44C1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns

AEG 4489

Abstract: aar 07 MAX6411BS35-T aar transistor ABG CHIP TRANSISTOR MAX6406 MAX6406BS22-T MAX6410BS33-T MAXIM TOP MARKING MAX6406MAX6411
Contextual Info: 19-2041; Rev 1; 8/01 Voltage Detectors in 4-Bump 2 X 2 Chip-Scale Package Features The MAX6406–MAX6411 is a family of ultra-low power circuits used for monitoring battery, power-supply, and regulated system voltages. Each detector contains a precision bandgap reference comparator and is

TC51832A

Abstract: 256X128X8 TC51832AP 1832A
Contextual Info: TOSHIBA TC51832AP/ASP/AF-70/85/10 TC51832APL/ASPL/AFL-70/85/10 SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1832 A P is a 2 5 6 K bit high speed C M O S p se udo static RAM organized as 3 2 ,7 6 8 w o rd s by 8 bits. The TC 51832A P utilizes

KM44C1004C

Contextual Info: KM44C1004C/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM44C1004C/CL/CSL-5 50ns 13ns 90ns 20ns KM44C1D04C/CL/CSL-6 60ns 15ns 110ns 24ns KM44C1004C/CUCSL-7

Contextual Info: 19-2015; Rev 5; 5/06 KIT ATION EVALU E L B AVAILA RF Power Detectors in UCSP The MAX2205–MAX2208 wideband 800MHz to 2GHz power detectors are ideal for GSM/EDGE (MAX2206), TDMA (MAX2207), and CDMA (MAX2205/MAX2208) applications. The MAX2206/MAX2207/MAX2208 take an

DEVICE MARKING CODE AEU

Abstract: marking abj AFG MARKING CODE UCSP4 MAX6409BS46-T MAX6411BS33 marking B43 b43 MARKING CODE MAX6409BS35 B43 marking
Contextual Info: 19-2041; Rev 1; 8/01 Voltage Detectors in 4-Bump 2 X 2 Chip-Scale Package Features The MAX6406–MAX6411 is a family of ultra-low power circuits used for monitoring battery, power-supply, and regulated system voltages. Each detector contains a precision bandgap reference comparator and is

MAX44281

Abstract: MAX44281OANS MAX11645
Contextual Info: EVALUATION KIT AVAILABLE MAX44281 Ultra-Small, Ultra-Thin, 4-Bump Op Amp General Description Benefits and Features The MAX44281 is the industry’s first op amp in a 4-bump WLP package, designed for use in portable consumer and medical applications. This device is offered as a

Contextual Info: - PRELIMINARY - April 1996 Edition 2.2 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4405C-60/-70 CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode D y na m ic RAM The Fujitsu M B814405C is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304

MIC5213

Abstract: SP6213 8V micropower voltage regulator inpower
Contextual Info: SP6213 PRELIMINARY Micropower, SC-70, 100mA CMOS LDO Regulator FEATURES • Tiny 5-pin SC-70 Package ■ Guaranteed 100 mA Output ■ 2.5% Output Voltage Accuracy ■ Low Dropout Voltage, 250 mV at 100mA ■ Low Quiescent Current, 65 µA ■ Low Ground Current, 135 µA @ IL = 100mA