300X300X Search Results

parabolic antenna

Abstract: antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber
Contextual Info: EMC Components IP-B, IB, IS, IR, IF-P, IF-R Material Radio Wave Absorbers Radio Wave Absorbing Materials A key factor in absorbing unwanted electromagnetic energy efficiently and completely is selecting the most appropriate materials for the application. This selection process must take into account

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

KTD998

Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃

transistor ktd718

Abstract: KTB688 KTD718
Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ

ktd718

Abstract: ktd718 datasheet transistor ktd718 KTB688
Contextual Info: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ

al205

Abstract: KTA1036 KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING

2SC520A

Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
Contextual Info: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,

Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC

Contextual Info: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25

TA-2807

Abstract: D138 DBA250 DBA250C DBA250G 41000
Contextual Info: 注文コード No. N 2 1 4 5 C DBA250 No. N 2 1 4 5 C 41000 半導体ニューズ No.2145B とさしかえてください。 DBA250 特長 シリコン拡散接合形 25.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。

TA-2807

Abstract: D138 DBA250 DBA250C DBA250G
Contextual Info: 注文コード No. N 2 1 4 5 C DBA250 No. N 2 1 4 5 C 41000 半導体ニューズ No.2145B とさしかえてください。 DBA250 特長 シリコン拡散接合形 25.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

KTA1036

Abstract: KTC2016
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

EMC 2112

Abstract: ffd 1551 ACH32C-103-T MZA3216Y601 MZA3216S601A ACF451832-221-TD01 ACH32C-104-T 445-2201-1-ND ACH4518-153-T ACH4518-332-TD01
Contextual Info: Flexield Noise Suppression Sheets - Flexible Ferrite Material NEW! Feedthrough Filters and Capacitors Resin Fill Filters – FFD Series The FFD series is designed to meet the very stringent safety requirements of EN133200 class Y4 including the 2500V pulse test.

AQJ119V

Abstract: YG6111 3ssr AQJ112V AQJ112VY AQJ116V AQJ119VY AQJ212V AQJ216V AQJ219V
Contextual Info: ソリッドステートリレー AQ-J RoHS対応 強化絶縁規格取得（60950-1） 小型タブ端子SSR。スリム放熱器一体型もラインアップ。 特 長 ●小型サイズW28xL38×H30mm ●外来サージ吸収に優れるバリスタ内蔵付をご用意

2SB996

Abstract: 2SD1356 300X300X8
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA '• DE J T □=!7 S S 0 □ □ □ 7 ci54 S | ~ 5òC '0 7 9 Z* <D I S CR ET E/O PT O SILICON NPN T R IP LE 'D IFFU SE D TVPË; r t.u -r-> ? 1 ; POWER AMPL-IFIER .APPLICATIONS. Unit in Iran m g FEATURES i V •»„

D 871 Toshiba

Abstract: 2SB993 2SD1363
Contextual Info: TOSHIBA -CDISCRETE/0PT03- 9097250 T O S H IB A 5h DE~|TCn7250 □□□7cì3h 1 <D I S C R E T E / O P T O > SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. _ POWER AMPLIFIER APPLICATIONS. 1 Û 3 M A X .

2SC519A

Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.

2sb688

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c

KTD718

Abstract: KTB688 transistor ktd718
Contextual Info: SEMICONDUCTOR T E C H N IC A L D A T A KTD718 t r ip le d iffu s e d n p n t r a n s is t o r HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45—50W Audio Frequency Amplifier. • Output Stage. • Complementary to KTB688. MAXIMUM RATINGS Ta=25°C

2SC779

Abstract: transistor 2SC779 TRANSISTOR 2SC ls 11m
Contextual Info: 2SC SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o o o ««£*»*«» o H ig h 779 4 •>t- v r m INDUSTRIAL APPLICATIONS Tksr-tofatonm V o lta g e S w it c h in g Pow er and A m p lifie r , TV H o r iz o n ta l H ig h V o lta g e O u tp u t U n it in mm A p p lic a ­

inductive

Abstract: S T A 933 mt3516
Contextual Info: GLASS PASSIVATED SINGLE-OHASE BPIDGE RECTIFIER VOLTAGE RANGE MT3508G THRU MT3516G CURRENT • • • 35 Amperes MT-35 FEATURES • 1600 Volts 1.137 28.9 1.118(28.4) Integrally molded heatsink provides very low thermal resistance for maximum heat dissipation

Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation