300V 30A PFC Search Results

Contextual Info: 300V 30A APT30D30B APT30D30BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters

APT30D30B

Abstract: APT30D30BG
Contextual Info: 300V 30A APT30D30B APT30D30BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH30N60C3D1

Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ

ixgh30n60c3d1

Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information XPTTM 650V IGBT GenX4TM w/ Sonic Diode IXXH60N65B4H1 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 60A 2.0V 72ns TO-247 AD Symbol Test Conditions Maximum Ratings

Contextual Info: IXYH40N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 40A 2.20V 52ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

SANKEN BRIDGE DIODE 50A

Abstract: sanken diode
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC ＳＬＡ５２２７ Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max

Contextual Info: GenX3TM 1200V IGBT IXGH30N120B3D1 IXGT30N120B3D1 High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30

IXGR48N60C3D1

Abstract: 48N60C3D1 ixgr48n60 48N60 ixgr48n60c3 ixgr48 48N60C3 ISOPLUS247
Contextual Info: IXGR48N60C3D1 GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

Contextual Info: GenX3TM 600V IGBT with Diode IXGH48N60C3D1 VCES IC110 VCE sat tfi(typ) High speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH48N60C3D1

Abstract: 48N60C3D1 IXYS IXGH48N60C3D1 ixgh48n60c3d IXGH48N60 48N60 48N60C3 IXGH48N60C3
Contextual Info: GenX3TM 600V IGBT with Diode IXGH48N60C3D1 VCES IC110 VCE sat tfi(typ) High speed PT IGBT for 40-100kHz Switching = = ≤ = 600V 48A 2.5V 38ns TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXYH30N120C3D1

Contextual Info: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXGH30N120B3D1

Abstract: ixgh30n120 G30N120B3 IGBT 1200V 60A IXGH30N120B3 IXGT30N120B3D1 IF110 30n120
Contextual Info: IXGH30N120B3D1 IXGT30N120B3D1 GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VCES IC110 VCE sat tfi(typ) = = ≤£ = 1200V

48N60C3D1

Abstract: ixgr48n60c3d1 48N60
Contextual Info: GenX3TM 600V IGBT with Diode IXGR48N60C3D1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

IXGH36N60B3D1

Abstract: IF110
Contextual Info: IXGH36N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600

Contextual Info: Advance Technical Information MMIX2S50N60B4D1 Low Gain IGBT w/ Diode ES1 ES2 G1 G2 Electrically Isolated Tab Short Circuit SOA Capability VCES IC90 VCE(sat) tfi(typ) = = ≤ = 600V 30A 2.0V 50ns ES1 E1 G1 C2 C1E2 ES2 Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information MMIX2S50N60B4D1 Low Gain IGBT w/ Diode ES1 ES2 G1 G2 Electrically Isolated Tab VCES IC90 VCE(sat) tfi(typ) = = ≤ = 600V 30A 2.0V 50ns ES1 Short Circuit SOA Capability E1 G1 C2 C1E2 ES2 Symbol Test Conditions Maximum Ratings

IXGH36N60B3D1

Abstract: IF110
Contextual Info: IXGH36N60B3D1 GenX3TM 600V IGBT VCES = 600V IC110 = 36A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBT for 5 - 40kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V

ixgr48n60

Abstract: IXGR48N60B3D1 48N60 48N60B3D1 IXGR48N60B3 smd c7f IF110
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGR48N60B3 IXGR48N60B3D1 VCES = IC25 = VCE sat ≤ tfi(typ) = (Electrically isolatred Back Surface) Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGR_B3 IXGR_B3D1 Maximum Ratings ISOPLUS247TM (IXGR)

ixgh40n60b2d1

Abstract: 40N60B2D1 40n60b QG SMD TRANS
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXGH48N60B3D1

Abstract: IXGH48N60 48N60
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH48N60B3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR

Contextual Info: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

40N60B2D1

Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C