300 MIL, CERDIP IDT Search Results

DS01003

Abstract: idt6116s GQ-01 MA5S771 IDT6116L s116l B-116S b116s
Contextual Info: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:

125OC

Abstract: IDT6167 IDT6167LA IDT6167SA
Contextual Info: IDT6167SA IDT6167LA CMOS Static RAM 16K 16K x 1-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ high reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS

Contextual Info: CMOS STATIC RAM 256K 32 K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.) — Commercial: 20/25/35/45ns (max.) Low Power only. • Low-power operation

Contextual Info: IDT72401 IDT72402 IDT72403 IDT72404 CMOS PARALLEL FIFO 64 x 4 and 64 x 5 IDT72404 are asynchronous high-performance First-ln/First-Out memories organized as 64 words by 5 bits. The IDT72403 and IDT72404 also have an Output Enable OE pin. The FlFOs accept 4-bit or 5-bit data at the data input

IDT71256

Abstract: IDT71256L IDT71256S
Contextual Info: CMOS Static RAM 256K 32K x 8-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ The IDT 71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power

q02p

Contextual Info: CMOS STATIC RAM 64K 8K x 8-BIT IDT7164S IDT7164L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select access time — Military: 20/25/30/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35/70ns (max.) • Low power consumption

6116 ram 2k

Abstract: IDT6116LA IDT6116SA SO24-2 idt6116s
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

MR 4007

Contextual Info: CMOS PARALLEL FIFO WITH FLAGS IDT72413 6 4 x 5 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . DESCRIPTION: FEATURES: First-In/First-Out Dual-Port memory— 45MHz 64 x 5 organization Low-power consumption — Active: 200mW typical RAM-based internal structure allows for fast fall-through

1S21

Abstract: P4C150
Contextual Info: PERFORMANCE SEMICONDUCTOR 5 DE D • TDbESI? □ □ □ 1 Ô G 4 b^T « P S C P4C150 ULTRA HIGH SPEED 1K x 4 RESETTABLE STATIC CMOS RAM SCRAM FEATURES ■ Full CMOS, 6T Cell Three-State Outputs ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)

Contextual Info: IDT7164S IDT7164L CMOS STATIC RAM 64K 8K x 8-BIT Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select access time — Military: 20/25/30/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35/70ns (max.) • Low power consumption

6Cs smd

Abstract: smd 6CS SMD-5962-88588 sei smd resistors P4C147 P4C150 RS723
Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM j *— -FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial)

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 2 5 /3 0 /3 5 /4 5 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Com mercial: 2 0 /25/3 5/45 n s (max.)

Contextual Info: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: of-the-art technology, combined with innovative circuit design techniques, provides a cost effective alternative to bipolar and fast N M O S memories. Timing param eters have been speci­

Effio

Abstract: palce22v10 programming guide Pal programming 22v10 22v10 pal palce programming Guide 22V10-25 ce22V10 CERAMIC LEADLESS CHIP CARRIER Pal programming PALCE22V10
Contextual Info: ,.V. Ï. Ï. V. ^ynr' Æ PALCE22V10 CYPRESS Flash Erasable, Reprogrammable CMOS Pal Device Features 5 ns tPD 181-MHz state machine • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogramm ability

Contextual Info: CMOS STATIC RAM 16K 16K x 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: FAST CM O S O CTAL D FLIP-FLOP 3-STATE IDT54/74FCT534 I DT54 7 4 F C T 5 3 4 A FEATURES: DESCRIPTION: • IDT54/74FCT534 10.0ns max. clock to output; IDT54/74FCT534A 6.5ns max. clock to output • Equivalent to FAST output drive over full temperature

t245A

Contextual Info: FAST CM OS NON-INVERTING BUFFER TRANSCEIVER IDT54/74FCT245 IDT54/74FCT245A FEATURES: DESCRIPTION: • T h e ID T54/74FC T245 and ID T54/74FC T245A are 8-bit non­ inverting, b id ire c tio n a l buffers b u ilt u sing a dva n ce d CEMOS , a dual m etal C M O S te c h n o lo g y . These b id ire c tio n a l buffers have

Contextual Info: IDT54/74FCT139 IDT54/74FCT139A IDT54/74FCT139C FAST CMOS DUAL 1-OF-4 DECODER WITH ENABLE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • The IDT54/74FCT139/A/C are dual 1-of-4 decoders built using an advanced dual metal CMOS technology. These

74FCT646

Contextual Info: FAST CMOS OCTAL TRANSCEIVER/REGISTER IDT54/74FCT646 IDT54/74FCT646A IDT54/74FCT646C Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • • • • The IDT54/74FCT646/A/C consists of a bus transceiver with 3-state D-type flip-flops and control circuitry arranged for

Contextual Info: CMOS STATIC RAM 16K 16Kx 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (max.) — Com mercial: 12 /15/2 0 /2 5 /3 5 n s (m ax.)

Contextual Info: BiCMOS HIGH-SPEED STATIC RAM 64K 8K x 8-BIT ADVANCE INFORMATION IDT71B64 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8192-w ords x 8-bits organization • JE D E C standard 28-pin D IP , S O J, and 32-pin LCC • Fast access time: — Com mercial: 1 0 /1 2 /1 5ns (max.)

Contextual Info: FAST CM O S O CTAL D FLIP-FLOP WITH CLEAR IDT54/74FCT273 IDT54/74FCT273A FEATURES: DESCRIPTION: • IDT54/74FCT273 equivalent to FAST speed; The IDT54/74FCT273 and IDT54/74FCT273A are octal D flipflops built using advanced CEMOS™, a dual metal CMOS tech­

Contextual Info: CMOS PARALLEL FIFO 64 x 4 and 64 x 5 | dt Integrated D evize Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • First-In/First-Out D ual-Port mem ory 64 x 4 organization ID T72401/72403) 64 x 5 organization (ID T72402/72404)

Contextual Info: -•S -M tT td -11- . - INTE SRATED DEVI CE 3 ÛE D m 4 Û S S 771 0 0 0 0 2 7 5 _ fi • IDT - T - V ^ - 7 V l2 _ IDT7165S IDT7165L CMOS STATIC RAM 64K (8K x 8-BIT RESETTABLE RAM NOT RECOMMENDED F O R N E W D E S IG N S «> FEATURES: