2SK258 Search Results
2SK258 Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SK258 | Hitachi Semiconductor | Power Transistors Data Book | Scan | 127.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK258 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 123.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK258 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 101.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2580 |
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Silicon N-Channel Power F-MOS | Scan | 130.03KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2581 |
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Silicon N-Channel Power F-MOS | Scan | 128.72KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2582 | Hitachi Semiconductor | Mosfet Guide | Original | 6.15MB | 1147 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2582 | Hitachi Semiconductor | FET Transistor, Silicon N-Channel MOSFET | Original | 47.97KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2582 |
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Silicon N-Channel MOS FET | Original | 29.28KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2586 | Hitachi Semiconductor | Mosfet Guide | Original | 6.15MB | 1147 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2586 | Hitachi Semiconductor | Silicon N-Channel MOS FET | Original | 33.98KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2586 |
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Silicon N Channel MOS FET | Original | 85.49KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2586 |
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Silicon N-Channel MOS FET | Original | 33.11KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2586-E |
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Silicon N Channel MOS FET | Original | 85.48KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2588 |
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Silicon N-Channel Power F-MOS | Scan | 139.64KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SK258H | Hitachi Semiconductor | Silicon N-Channel MOS FET, High Power Switching, High Freq. Power Amplifier | Scan | 74.33KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK258(H) | Unknown | Semiconductor Master Cross Reference Guide | Scan | 123.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK258(H) | Unknown | FET Data Book | Scan | 93.66KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK258H | Unknown | Semiconductor Master Cross Reference Guide | Scan | 123.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK258H | Unknown | Shortform Datasheet & Cross References Data | Short Form | 81.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK258 Price and Stock
Hitachi Ltd 2SK2586Transistors |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2586 | 1,342 |
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Get Quote | |||||||
Renesas Electronics Corporation 2SK2586-ETransistors |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2586-E | 461 |
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Get Quote | |||||||
2SK258 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK2580Contextual Info: P o w e r F -M O S Panasonic FETs 2SK2580 Tentative Silicon N -Channel Power F-M OS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay |
OCR Scan |
2SK2580 | |
Hitachi DSA001652Contextual Info: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate |
Original |
2SK2586 D-85622 Hitachi DSA001652 | |
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Contextual Info: 2SK2588 Power F-MOS FETs 2SK2588 Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed ● Low 4.6±0.2 ON-resistance ø3.2±0.1 2.9±0.2 9.9±0.3 drive ● Solenoid ● Motor 13.7 -0.2 ● Non-contact +0.5 ■ Applications relay drive drive |
Original |
2SK2588 O-220E | |
Hitachi DSA00276Contextual Info: 2SK2586 Silicon N-Channel MOS FET ADE-208-358C Z 4th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline |
Original |
2SK2586 ADE-208-358C D-85622 Hitachi DSA00276 | |
2SK2829
Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
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OCR Scan |
2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151 | |
2SK2588
Abstract: RL502
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OCR Scan |
2SK2588 2SK2588 RL502 | |
SC-46
Abstract: 2SK1401 2SK2582 Hitachi DSA00116
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Original |
2SK2582 220AB SC-46 2SK1401 2SK2582 Hitachi DSA00116 | |
2SK25
Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
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Original |
2SK2586 2SK25 2SK2529 2SK2586 PE-50 Hitachi DSA00116 | |
C1030Contextual Info: 2SK2586 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance RDSK.ni = 7 m£2 lyp. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P I 1 2 Ui 3 1. Gate 2. Drain |
OCR Scan |
2SK2586 ADE-208-358 C1030 | |
2SK2529
Abstract: 2SK2586 Hitachi DSA00336
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Original |
2SK2586 ADE-208-358 2SK2529 2SK2586 Hitachi DSA00336 | |
2SK2586
Abstract: 2SK2586-E PRSS0004ZE-A SC-65
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Original |
2SK2586 REJ03G1020-0500 ADE-208-358C) PRSS0004ZE-A 2SK2586 2SK2586-E PRSS0004ZE-A SC-65 | |
Hitachi DSA001651Contextual Info: 2SK2582 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline |
Original |
2SK2582 O-220AB Hitachi DSA001651 | |
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Contextual Info: 2SK2586 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 3. Source |
OCR Scan |
2SK2586 D-85622 | |
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Contextual Info: 2SK2582 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter |
OCR Scan |
2SK2582 75Hitachiâ | |
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Contextual Info: 2SK2580 Power F-MOS FETs 2SK2580 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Low-voltage drive ● Non-contact ● Solenoid ● Motor |
Original |
2SK2580 2SK2580 O-220E | |
2sk2581Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2581 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications |
OCR Scan |
2SK2581 2sk2581 | |
2SK2580
Abstract: AS0401
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OCR Scan |
2SK2580 AS0401 | |
2SK2581Contextual Info: Panasonic Power F-MOS FETs 2SK2581 Tentative Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay |
OCR Scan |
2SK2581 2SK2581 | |
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Contextual Info: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange) |
Original |
2SK2586 | |
Hitachi DSA002713Contextual Info: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate |
Original |
2SK2586 Hitachi DSA002713 | |
Hitachi DSA002780Contextual Info: 2SK2582 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-220AB |
Original |
2SK2582 O-220AB D-85622 Hitachi DSA002780 | |
Hitachi DSA00276Contextual Info: 2SK2582 Silicon N-Channel MOS FET ADE-208-1364A Z 2nd. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter |
Original |
2SK2582 ADE-208-1364A O-220AB D-85622 Hitachi DSA00276 | |
Hitachi DSA002780Contextual Info: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 |
Original |
2SK2586 ADE-208-358 D-85622 Hitachi DSA002780 | |
2SK2588
Abstract: VDS1
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OCR Scan |
2SK2588 2SK2588 VDS1 | |