2SK2081 Search Results

2SK2081-01

Contextual Info: 2SK2081-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,6Ω 12A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

gs 069

Abstract: 2SK2081-01
Contextual Info: 2SK2081-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,6Ω 12A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2081-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,6Ω 12A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

CHN 545

Contextual Info: 2SK2081 -01 F U JI PO W ER M O S-FET N-OHANNEL SILICON POWER MOS-FET FAP-IIASERIES • -eatures lOutline Drawings • I- igh speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V Cs= ± 3 0 V Guarantee

Contextual Info: 2SK2081-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators

2SK2081-01

Abstract: SC-65 T151 FA-MT a2396
Contextual Info: 2SK2081-01 FUJI POWER MOS-FET N-OHANNEL SILICON POWER MOS-FET F A P -IIA S E R IE S • : eatures Outline Drawings • h igh speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • Vcs = ±30V Guarantee • Avalanche-proof

2SK2081-01

Abstract: SC-65 mosfet 345
Contextual Info: 2SK2081-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01

2SK1937

Contextual Info: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

2SK2774

Abstract: 2SK1941-01R 2SK2774-01MR 2SK1936-01
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type ＊2 VGS th Typ. Volts パッケージ Package

2sk2255-01mr

Abstract: 2SK2082 2SK194 2SK1941-01R
Contextual Info: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± -5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK2251-01 2SK2292-01L.S 2SK2099-01 L,S 2SK2253-01 M R 2SK2252-01L.S 2SK2255-01 M R 2SK2254-01 U,S

2SK2774

Abstract: 2sk1941-01r 2SK2029 2SK1821 equivalent 2SK1938 2SK1941 2SK2257-01 2SK2250-01L 2SK2251-01 2SK2253-01MR
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIA シリーズ FAP-IIA series 低オン抵抗低入力容量 Low-on resistance and low typical capacitance 形 式 Device type 2SK2518-01MR 2SK2918-01 2SK2774-01MR 2SK2251-01

Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0

2SK2645

Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
Contextual Info: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)