2SK1729 Search Results

2SK1729

Contextual Info: O rd e rin g n u m b e r: E N 3 8 2 4 _ 2SK1729 No.3824 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M eets radial taping. A b s o lu te M axim um R a tin g s a t Ta = 25°C

Contextual Info: 2SK1729 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)15 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

EN3824

Abstract: 2SK1729
Contextual Info: Ordering number:EN3824 N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1729] 2.5 1.45 1.0

2SK1729

Contextual Info: 2SK1729 2087 LD L o w D rive S eries V dss= 1 0 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M eets radial taping. A b so lu te M a x im u m R a tin g s a t Ta = 25°C D rain to Source V oltage

2SK1723

Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
Contextual Info: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698

2SK2747

Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

2SK1901

Contextual Info: 11 LO Seríes Lineup V DSS = 100V, N-channel Absolute maximum ratings at Ta =25°C Type No. 2SK1849 Package V d ss VGSS V (V) CP 2SK1473 2SK1728 % ?o‘ (A) m 0.25 0.25 t Electrical characteristics atTa = 25°C ^G S (off) min to max (V) 2.0 ^D S (on) ^D S (on)

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。