2SK 100A Search Results

2SK2388

Abstract: 1B10B N3I3
Contextual Info: TOSHIBA Discrete Semiconductors 2SK 2388 Unit in mm Silicon N Channel MOS Type c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • Low Drain-Source ON Resistance: fSs{ON)= 1-8£2(Typ.)

2SK2473-01

Abstract: diode 300v 20a
Contextual Info: F U JI 2SK 2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0 ,2 Q 20A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof 4.5 r > Applications

Transistor D 2599

Contextual Info: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)

A2137

Contextual Info: 2SK 1 0 8 8-M R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ -eatures • h igh current • Law on-resistance • No secondary breakdown • L dw driving power • high forward Transconductance ■Applications • Motor controllers

Contextual Info: SPECIFICATION DEVICE NAME : Power M O S FET TYPE NAME 2SK 2807-01 L,S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co.,Ltd. CHECKED ‘ 1/l nY 0257-R -004a ± 1.Scope This specifies Fuji Power MOSFET 2SK2807-01 L,S

2SK2523-01

Abstract: 2SK2525-01
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : P o w e r MOSFET 2SK 2 5 2 3- 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Füji Electric C a jid 1/11 Y 0257-R-004a 1 . Scope This specifies Fuji power MOSFET

2SK1201

Abstract: LB205
Contextual Info: MMTbEDS QD13E37 TÔT « H i m 2SK 1201 HITACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET -, HIGH SPEED POWER SWITCHING O O c" a :! > • FEATURES LÌ • • • • • -4“ - * — r / , — ± - Low On-Resistance High Speed Switching

2SK1096-MR

Contextual Info: 2SK 1096-M R FUJI P O W ER M O S-F ET l\M HAI\ll\IEL S IL IC O N P O W E R M O S - F E T F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■ ¿applications

2SK1201

Abstract: 2SK120-1 g1323
Contextual Info: M MTbEDS 2SK 1201 Q D 1 3 E 3 7 TÔT HITACHI/ OPTOELECTRONICS « H i m bl E D S IL IC O N N -C H A N N E L M O S F E T -, HIGH SPEED POWER SWITCHING c" a :! LÌ □ 1.G ate 2. D rain (FUnce) 3. Source (Dimensions in i <4' *“ M <? Low On-Resistance High Speed Switching

Contextual Info: m 2SK1313 ,2SK1313 § -2SK1314©,2SK1314(§) blE D M M ^ b ED S 0 0 1 3 3 3 0 40b IHIT4 © 1 > ,K SILICON N-CHANNEL MOS F E T 10.2 ± 0 .3 4 44 ± 0 2 HIGH SPEED POWER SWITCHING 4.44 ± 0.2 L 1.3 ± 0 .2 ? • FEATURES o.i ^ 2759 ±0.2 H ¡ 0 .4 ±0.1 •

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK579

Abstract: MPT 0,5 k580
Contextual Info: S K 5 7 9 , 2 S K 5 8 2 S K 5 7 9 < § , 2 S K 5 8 L ), S •HITM 2 SILICON N-CHANNEL MOS FET 3 bS HIGH SPEED POWER SWITCHING DC-DC Converter, Motor Controls, and Ultrasonic 1. 2. 3. 4. Power Oscillators. G ate D r a in So u rce D ra m (D im e n s io n s in m m l

2SK350

Abstract: 2sk350 hitachi 2SK349
Contextual Info: HI T A C H I / { O P TO ELECT RO NI CS } — 73 2 p re t? ? x r5 ^ H ^ D E ] M4ci b à 0 S ^ D Î 0 D â Ô 73C 10020 } 2SK349,2SK350 max S IL IC O N N -C H A N N E L M O S FET 1.5 HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES •

2sk 100a

Abstract: 2SK1063
Contextual Info: 2SK1063,2SK1064blE » • MMÌbEOS G Ü 13173 T 3 T SILICON N-CHANNEL MOS F E T IH I T 4 HITACHI/ OPTOELECTRONICS HIGH SPEED POWER SWITCHING 1. Gate 2. Source 3. Drain (C ase) (Dimensions in nun) (JE D E C T O -3 ) IABSOLUTE MAXIMUM RATINGS (To=25°C) Ite m

2SK298

Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Contextual Info: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

2SK580

Abstract: 2SK579 2SK57 2SK58
Contextual Info: 2SK579 L ,2SK580£), 2SK579 ,2SK580(§) IJ J V N * + M O S FET SILICON N -C H A N N EL M O S FET HIGH S P E E D PO W ER SWITCHING 3F à I © Type L -J Type 2,4 r= 2i 1. Y - V : G ate 2. F l " i > ! D ra in 3. y 4. F w - Í X ! D ra in — X I S o u rc e

Contextual Info: 2SK1371.2SK1372 MMTtiEGS Ü01 3 3A 1 =l?fl blE D iH ITM SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and

2SK1371

Abstract: VM-201 2SK1372 HITACHI 2SK* TO-3 Hitachi Scans-001
Contextual Info: bl E D M4TbEGS DD133Ô1 IHITM 2 S K 1 3 7 1 .2 S K 1 3 7 2 SILICON N-CHAIMNEL M O S FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • 1. 2. 3. Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator and

2sk mosfet

Abstract: 2SK904
Contextual Info: 2SK904 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators

2sk298

Abstract: 2SK299 3tb 40 Hitachi Scans-001
Contextual Info: 44<ib205 G013024 blE D IHIT4 4bT 2SK298,2SK299 HITACHI/C OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.

2sk mosfet

Abstract: 2sk 30A MOSFET 25C1 2SK1020 P15A
Contextual Info: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications

diode A226

Abstract: A226 diode mosfet 4502 A226 equivalent 2SK903 equivalent 2SK903-M 2SK903
Contextual Info: 2SK903-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown 10±05 032 *02 4 5±02 % • Low driving power • High voltage <D@® 1 : Gate

2sk mosfet

Contextual Info: 2SK1008-01 S IP M O S 1* FUJI POWER M O S-FET N CHANNEL SILICON POWER MOS-FET i- A l-k T T o r m • Features ■ Outline Drawings r o FAP-11 S ER IEb • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

2SK553

Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001
Contextual Info: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •