DG13D Search Results

2SK553

Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001
Contextual Info: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •

pin diagram of ic 741

Abstract: compander AN6141SB PREAMP circuit diagram IC 741 AN6141S
Contextual Info: Panasonic ICs for Telephone AN6 1 4 1 S, AN6 1 4 1 SB Cordless Telephone Compander 1C AN6141S Unit I mm XD24 Ï CH 2 eh :3cn JJJ23 O JH 22 x n 2i XD20 XD 19 XD1S ID 17 m i6 ID 15 m l4 H I 13 4ŒC • Overview 5 ra The AN6141S and AN6141SB are compander ICs for

Contextual Info: Panasonic ICs for Telephone A N 6153 N , A N 6153 N S Speech Network Circuits • Overview The AN6153N and AN6153NS are ICs for speech net­ work with excellent branch performance. It incorporates basic speech functions to meet with vari­ ous transmitters/receivers.

Contextual Info: CXB1582Q SONY Fibre Channel Receiver Description The CXB1582Q is a receiver IC with a built-in PLL clock recovery circuit for high-speed serial data recep­ tion. It can be used together with the transmitter IC, CXB1581Q, as a chip set and 1062.5Mbaud, 20-bit or

Contextual Info: j _ j g j ¥ | IB M 1 1 M 4 7 2 0 D 4M x 72 DRAM MODULE Features • 168 Pin JED EC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 4M x72 Fast Page Mode DIM M • Performance:

SP9960

Contextual Info: ÛEC P L E S SE Y S E M I C O N D S 43E D WÊ 37bflS2E 0 G 1 3 Ü Q 7 Q MPLSB GEC PLESSEY I s E M i C Q N P U C T O R S | _ PRELIMINARY INFORMATION 3023-1.0 SP9970 '.-p 75-4^ FDDl PARALLEL TO SERIAL LINE DRIVER FDDl Fibre Distributed Data Interface is a standard

Contextual Info: Panasonic A /D and D /A Converters AN8140K High-speed Low Power Consumption 10-bit D/A Converter • Overview The AN8140K is a 10-bit D/A converter for image pro­ cessing which has realized low power comsumption by using the Bi-CMOS process. ■ Features

Contextual Info: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M )