2SJ53 Search Results

2SJ539

Abstract: DSA003643 Hitachi 2SJ
Contextual Info: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2

2SJ537

Abstract: Toshiba 2SJ
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

2SJ532

Abstract: DSA003774
Contextual Info: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ531 Silicon P Channel MOS FET High Speed Power Switching ADE-208-646A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ531 Absolute Maximum Ratings (Ta = 25°C)

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ535 Silicon P Channel MOS FET High Speed Power Switching ADE-208-627B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ535 Absolute Maximum Ratings (Ta = 25°C)

j537

Abstract: J5-37 2SJ537
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

2SJ532

Abstract: DSA003643
Contextual Info: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G

2SJ534

Abstract: Hitachi 2SJ Hitachi DSA00389
Contextual Info: 2SJ534 Silicon P Channel MOS FET High Speed Power Switching ADE-208-589C Z 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G 1 2

2SJ530

Abstract: Hitachi DSA00336
Contextual Info: 2SJ530 L ,2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.08Ω typ. • 4V gate drive devices. • High speed switching. Outline DPAK–2 4 4 D 1 2 G 1 2 S 3

J537

Abstract: 2SJ537
Contextual Info: 2SJ537 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅥ 2SJ537 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.16Ω (標準) z 順方向伝達アドミタンスが高い。

2SJ534

Abstract: 2SJ534-E PRSS0003AD-A
Contextual Info: 2SJ534 Silicon P Channel MOS FET REJ03G0884-0500 Previous: ADE-208-589C Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

2SJ533

Abstract: 2SJ533-E PRSS0003AE-A
Contextual Info: 2SJ533 Silicon P Channel MOS FET REJ03G0883-0400 Previous: ADE-208-649B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

2SJ531

Abstract: 2SJ531-E PRSS0003AE-A
Contextual Info: 2SJ531 Silicon P Channel MOS FET REJ03G0881-0300 Previous: ADE-208-646A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

2SJ537

Abstract: J537
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance

sanyo 52

Abstract: 2SJ538
Contextual Info: Ordering number : ENN0000 2SJ538 P-Channel Silicon MOSFET 2SJ538 Load Switching Applications Preliminary Features Low ON-resistance. 4V drive unit : mm 0000 [2SJ538] 2.3 0.5 5.5 7.0 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 1 : Gate 2 : Drain

2SJ534

Abstract: Hitachi 2SJ DSA003642
Contextual Info: 2SJ534 Silicon P Channel MOS FET High Speed Power Switching ADE-208-589C Z 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G 1 2

2SJ535

Abstract: 2SJ535-E PRSS0003AD-A
Contextual Info: 2SJ535 Silicon P Channel MOS FET REJ03G0885-0400 Previous: ADE-208-627B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

2SJ532

Abstract: 2SJ532-E PRSS0003AE-A
Contextual Info: 2SJ532 Silicon P Channel MOS FET REJ03G0882-0400 Previous: ADE-208-653B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

Contextual Info: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-653B Z 3rd. Edition June 1, 1998 Features • Low on-resistance Rds(oii) = 0.042i2 typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO-220CFM

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline 2SJ539 Absolute Maximum Ratings (Ta = 25°C)

Hitachi 2SJ

Abstract: Hitachi DSA002757 2SJ53
Contextual Info: 2SJ534 Silicon P Channel MOS FET High Speed Power Switching ADE-208-589C Z 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ534 Absolute Maximum Ratings (Ta = 25°C)

2SJ537

Contextual Info: TO SH IBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Souree On Resistance

2SJ537

Abstract: Toshiba 2SJ
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) l High forward transfer admittance

2SJ533

Abstract: Hitachi DSA00395
Contextual Info: 2SJ533 Silicon P Channel MOS FET High Speed Power Switching ADE-208-649B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2