2SJ0536 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 Rating Unit VDSS −30 V Gate-source voltage (Drain open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits • Package ■ Features • High-speed switching • S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET M Di ain sc te on na tin nc ue e/ d Secondary battery packs (Li ion battery, etc.) For switching circuits • Package ■ Features

2SJ0536

Abstract: MARKING G 3pin
Contextual Info: Silicon MOS FETs Small Signal 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1 3 0.65 2.0±0.2 ● High-speed switching ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

2SJ0536

Contextual Info: Silicon MOS FETs Small Signal 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1 0.65 2.0±0.2 ● High-speed switching ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

2SJ0536

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 • Features

2SJ0536

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 Gate-source voltage (Drain open)

2SJ0536

Contextual Info: Silicon MOS FETs Small Signal 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.3–0 0.65 1 0.65 2.0±0.2 ● High-speed switching ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

2SJ0536

Contextual Info: Silicon MOSFETs Small Signal 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 Rating Unit VDSS −30 V Gate-source voltage (Drain open) VGSO ±20 V Drain current ID −100

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 Rating Unit VDSS −30 V Gate-source voltage (Drain open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET M Di ain sc te on na tin nc ue e/ d Secondary battery packs (Li ion battery, etc.) For switching circuits ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Secondary battery packs (Li ion battery, etc.) For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 (0.65) (0.65) di p Pl lan nclu

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SJ0536

Abstract: XN06776
Contextual Info: Composite Transistors XN06776 Silicon P-channel MOSFET For switching Secondary battery pack Li+ ion battery, etc. Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 6 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Composite Transistors XN06776 Silicon P-channel MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 • Features 5 6 2 1 0.65±0.15 3 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 5° 1.50+0.25 –0.05 • High gate-source voltage Drain open VGSO

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

SSSMini3-F1 transistor

Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

XN06776

Abstract: 2SJ0536
Contextual Info: Composite Transistors XN06776 Silicon P-channel MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 6 1.50+0.25 –0.05 • High gate-source voltage Drain open VGSO • Low gate threshold voltage Vth • Two elements incorporated into one package (FET)