TRANSISTOR 2sb546
Abstract: 2SB546 416W 2SD401
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB546 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V (Min) ·Collector Power Dissipation: PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD401 APPLICATIONS
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2sb546-150v2sd401-10ma+3-50matransistor 2sb546416w
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2SD401
Abstract: Transistor 2sd401
Contextual Info: SILICON EPITAXAL PLANAR TRANSISTOR 2SD401 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER
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2sd401o-220500matransistor 2sd401 |
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2SKB
Abstract: 2sd401 2SD401A 25D40 2SB546A 2SB547A 2SD402A 2sB54 2SD401 L NEC JAPAN
Contextual Info: NEC SILICON POWER TR A N S IS TO R S ELEC TR ON DEVICE ?.SR 546A,b4'/A/?.S 1 401 A, 40?. A VERTICAL DEFLECTION OUTPUT FOR COLOR TV PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D E S C R IP T IO N The 2SB546A PNP), 2S D 401A (N P N ), 2SB547A (PNP), and 2S D 402A (NPN) are high voltage triple diffused silicon transis
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2skb46a2sb546a2sd401a2sb547a+72sd402a2skb2sd40125d402sb542sd401 lnec japan
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PC1382C
Abstract: kflb 1382C PC1382 tv sound ic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT _ ¿¿PCI 382C TV SOUND IF PROCESSOR AND ATTENUATOR O IS C R IP T IO N MPC1382C is a T V sound 1C. It can be operated with no adjustment, using «ram ie filters externally- It contains a DC controlled attenuator, which has wide effective area and gentle characteristic in the chainging, so it is convenient especially for
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upc1382c1382c--ovcc2-1002sd401+62sc23712sc1941pc1382ckflbpc1382tv sound ic
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sound detactor ic
Abstract: nec 14 tv diagram 1382c PC1382C 2S0401 uPC1382C T253 PC1382 puls detector VHF DF Antenna
Contextual Info: E C ELECTRON ICS INC "Tú »F |t,M57SES ODIA 33D D 77^7^7 BIPOLAR ANALOG INTEGRATED CIRCUIT _ M PC1382C TV SO U N D IF P R O C E S S O R A N D ATTENUATOR DISCRIPTION /aPCl382C is a TV sound 1C. It can be operated with no adjustment, using ceramic filters externally. It contains a DC
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m57sesupc1382c/apcl382cc-27071by+13kac-26984y1382c2sd4012sc23712sc1941sound detactor icnec 14 tv diagrampc1382c2s0401t253pc1382puls detectorvhf df antenna
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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bd135bd136bd137bd138+16bd139bd140bd142bd144bd157bd158je350je180mj13004tp33cbd325je172bdx48je340bd160but55
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2n44012n54012n55512sa1004+162sa10102sa10132sa10152sa10162sa10172sa10192sc3133 cross referencehitachi 2sc281nec d882a564ad1163a2sc1815 cross referencea628akrc1211kra2203nec d288
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171b0411b0733thd200f1dk522sc49772n5415 replacementtip 2n3055bd68dsgs-thomson cross referencebux37 thomson
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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mj11018mj11022mj11017mj11021+9tip73btip74tip74atip74bmj11017 equivalentbu108bu326bu100mje3055t
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2N6124
Abstract: 334 bdw93c 2n4920R BU108 2SA1046 2N4920 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2SA981 equivalent BU806 Complement BDX54
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4918 thru 2N4920* Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2n49212n49222n49232n4918+152n4920tip73btip74tip74atip74btip752n6124334 bdw93c2n4920rbu1082sa1046tip127 tip122 audio amplifier circuit2sa981 equivalentbu806 complementbdx54
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bdx54c equivalent
Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc
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bdx53bbdx53c220abbdx54b+14bdx54ctip73btip74tip74abdx54c equivalentbox 53c darlington power transistortip122 d-pak packageall similar transistor 2sa715bdx53c motorolabu108transistor tip31amplifier 2sd718 2sb688 schematicbdx542n386
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MJH11021 equivalent
Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
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mjh10012mj10012mjh11018mjh11020+14mjh11022mjh11017mjh11019mjh11021mjh11021 equivalentbuv44ft317sdt92022sc1903bd262 darlingtonbd133mje15033 replacementir6412sc2159
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TIP42C as regulator
Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems
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mje1123tip73btip74tip74a+15tip74btip75tip75atip75btip75ctip42c as regulatorbu1082sc103npn power darlington transistors high voltage high icm to-247nsp21002sd68bdx542sc1943mje24822sd675
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tip122 tip127 audio amp
Abstract: MJ21194 2N555 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT MJ21193 Audio Power Amplifier mj802 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ21193* NPN MJ21194* Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
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mj21193mj21194204aatip73b+11tip74tip74atip74btip75tip122 tip127 audio amp2n555tip127 tip122 audio amplifier circuitaudio power amplifier mj802bu326bu108bu100
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mj15003 equivalent
Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
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mj15003mj15004tip73btip74+12tip74atip74btip75tip75amj15003 equivalent2n3055 mj150032n3055bu108motorola mj15003bdx54bu326bu100
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2SC2246
Abstract: 2SD669 equivalent RCA1C03 BUW84 BD875 equivalent 2N6407 BU108 2N6026 2SD1178 NSD134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching motor control applications. • Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,
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2n62822n62832n62842n6285+162n62862n6287tip73btip74tip74atip74b2sc22462sd669 equivalentrca1c03buw84bd875 equivalent2n6407bu1082n60262sd1178nsd134
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transistor 2SA1046
Abstract: 2SC106 BD262 2SC1419 SE9302 2N6107 BD263 ST T4 3580 FT48 MJE34 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP33B* TIP33C PNP TIP34B* TIP34C Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V
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tip33btip33ctip34btip34c+16tip73btip74tip74atip74btip75tip75atransistor 2sa10462sc106bd2622sc1419se93022n6107bd263st t4 3580ft48mje34 equivalent
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IR642
Abstract: 2N6410 IR3001 2SD375 2SC931 bu180 BU108 BD411-8 bu500 BD661
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —
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2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
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2n6251tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sa10462n3055bu108transistor k 3596bu326bu100tl mje2955tmje3055t2n31742sc936
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