2SD240 Search Results

2sd2401

Abstract: 2SB1570 MT200 package
Contextual Info: Product Specification www.jmnic.com 2SD2401 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB1570 ・DARLINGTON APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: Product specification 2SB1572 Features Low VCE sat : VCE(sat) -0.4 V Complementary to 2SD2403 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage

Contextual Info: Transistors SMD Type Product specification 2SD2402 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage

2Sd2401

Abstract: rl10c 2SB1570
Contextual Info: SavantIC Semiconductor Product Specification 2SD2401 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

to223

Contextual Info: 2SD2403Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Features D1 A • This transistor is also available in the TO-223 case with the type designation PZT2403 E E1 • NPN Silicon Epitaxial Planar Transistor for

ic nec 2501

Abstract: NEC 2501 2SB1571 2SD2402
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 4.0±0.25

7974a

Abstract: 2SD2403
Contextual Info: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o

2SD2406

Contextual Info: T O S H IB A 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ± 0.3 • • # 3.2 ± 0.2 2 .710.2 High Power Dissipation : P£ = 25W Te = 25°C Good Linearity of hjpg CHARACTERISTIC Collector-Base Voltage

2SB1570

Abstract: 2SD2401
Contextual Info: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO 2SB1570 Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)

Contextual Info: TOSHIBA 2SD2406 TO SH IBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2S D 24 Q6 Unit POW ER AM PLIFIER APPLICATIONS 10 ± 0.3 High Power Dissipation : P q = 25W Tc = 25°C Good Linearity of h.FE 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SB1569

Abstract: 2SD2400
Contextual Info: Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1569 ・High transition frequency ・Collector power dissipation: PC=20W TC=25℃ APPLICATIONS ・For low frequency power amplifier

2SD2400

Abstract: 2SB1569
Contextual Info: SavantIC Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W TC=25 APPLICATIONS ·For low frequency power amplifier

d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )

2SD2406

Abstract: C25W
Contextual Info: T O S H IB A 2SD2406 T O S H IB A TRA N SISTO R SILICON NPN TRIPLE D IFFUSED TYPE 2SD2406 P O W E R A M P L IF IE R A PPLIC A TIO N S • H igh Power D issipation • Good L inearity o f hjrE : U n it in mm P q = 25W Tc = 25°C M A X IM U M RA TIN G S (Ta = 25°C)

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

smd marking gz

Abstract: smd marking GY SMD GZ GZ SMD smd GY marking gy smd marking GX 2SD2403
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SD2403 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage

D2406 transistor

Abstract: 2SD2406 D2406
Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

D2406

Abstract: 2SD2406
Contextual Info: 2SD2406 東芝トランジスタ シリコンNPN三重拡散 2SD2406 ○ 電力増幅用 単位: mm • コレクタ損失が大きい。: PC = 25 W Tc = 25°C • hFE の直線性が良い。 絶対最大定格 (Tc = 25°C) 項 目 記 号 定 格 単位

2SB1570

Abstract: 2SD2401 DSA0016506
Contextual Info: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO Ratings Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)

D2406 transistor

Abstract: D2406 2SD2406
Contextual Info: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

D1647

Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
Contextual Info: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER A M PLIFIER APPLICATIO N S. • • High Power Dissipation Good Linearity of hpjj IQ tO .i P q = 25W Tc = 25°C 0 3 .2 ¿0.2 2.7 ±0.2 M A XIM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

smd transistor HX

Abstract: smd transistor HY smd marking HY marking HX smd transistor HX 45 2SB1572 2SD2403 HY IC 2SD24 hy smd marking
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar 2SB1572 Features Low VCE sat : VCE(sat) -0.4 V Complementary to 2SD2403 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60

2SD2406

Contextual Info: TO SH IBA 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 . ^ 03.2 ±0.23 — 2.71Q.2 i - «I • • High Power Dissipation : P c = 25W Te = 25°C Good Linearity of hjpg MAXIMUM RATINGS (Tc = 25°C)