2SD224 Search Results

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO

2SD2249

Abstract: DSA003719 5021H
Contextual Info: Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.05 2.5±0.1 ±0.05 1.0 1.0 14.5±0.5 +0.1 0.45–0.05 • Absolute Maximum Ratings * 0.65 max. Ta=25˚C 2.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage

2SB1481

Abstract: 2SD2241 equivalent of 2sd2241
Contextual Info: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • H igh DC Current Gain : hpE = 2000 Min. • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) C*) cn CO

2SD2242

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2242 Silicon NPN triple diffusion planar type darlington Unit: mm 4.2±0.2 For power amplification 10.0±0.2 1.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)

Contextual Info: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)

2SD2249

Contextual Info: Transistors 2SD2249 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.5 0.65 max. 14.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

D2241

Abstract: TRANSISTOR D2241 2SD2241 2SB1481
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics

TRANSISTOR D2241

Abstract: D2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD2240

Abstract: 2SD2240A SC-75
Contextual Info: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 • Absolute Maximum Ratings Ta = 25°C Unit 150 V VCBO 2SD2240A 185 150 V Collector-emitter voltage 2SD2240

D2241

Abstract: TRANSISTOR D2241 2SB1481 2SD2241
Contextual Info: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)

B1481

Abstract: 2SB1481 2SD2241
Contextual Info: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241

2SB1463J

Abstract: 2SD2240J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J

2SB1481

Abstract: 2SD2241
Contextual Info: SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications

2SD2241

Abstract: 2SB1481 rl10c
Contextual Info: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications

Contextual Info: Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm 4.2±0.2 Parameter Symbol Collector to base voltage 2SD2242 Collector to emitter voltage 2SD2242 Rating VCBO VCEO V 90˚ 0.65±0.1 0.35±0.1 60 1.05±0.1 VEBO

FE2.1

Abstract: 2SD2242 2SD2242A 13002 npn
Contextual Info: Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 5.0±0.1 • Features ■ Absolute Maximum Ratings Parameter Collector to 2SD2242 base voltage 2SD2242A Collector to 2SD2242 emitter voltage 2SD2242A

2SD2249

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2249 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 ue pl d in an c se ed lud pl vi an m m es si

2SD2240

Abstract: 2SD2240A SC-75
Contextual Info: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 2SD2240 Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01

2SD2240

Abstract: 2SD2240A SC-75 2SD224
Contextual Info: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features ■ Absolute Maximum Ratings Ta = 25°C VCBO 2SD2240A Unit 150

2SD2240

Abstract: 2SD2240A panasonic transistor marking pr
Contextual Info: Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 1.6±0.15 0.4 0.5 1 3 0.5 ● High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment