2SD179 Search Results

Contextual Info: 2SD1795 TP10K40 llliSiSiflii " - r - N P N # —U > h > h ‘7 > > i^ iS f/N P N Darlington Transistor Outline Dimensions istillisi 4.6±o.2 Equivalent Circuit 2,7¿0.* 90 0.7 ±0.2 B o- Unit i mm C ase ! ITO-220 ^•220n *=120n ¿E Absolute Max. Ratings

2SD1797

Contextual Info: 2SD1797 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON GENERAL PURPOSE POWER AMPLIFIER Features • H ig h D .C . c u rre n t ga in • ¡ f t if f i't i H ig h re lia b ility : Applications • 'v J -ss ? i s * ’3.\'— 9 • D C -D C 3 W < —£ S w itc h in g re g u la to rs

2SD1791

Abstract: ITO-220 TP7L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1791 Case : ITO-220 TP7L10 Unit : mm 7A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: 2SD1799 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.4.0k

Contextual Info: SANKEN ELECTRIC CO LT» 55E D • 7 ei T D 7 m GÜD1G17 132 « S A K J Silicon NPN Triple Diffused Planar ☆ Surge Suppression ☆ Darlington 2SD1796 ☆ Complement to type 2 S B 12 57 Application Example : • Outline Drawing 4 Driver for Solenoid, Relay and Motor

2SD1795

Abstract: ITO-220 TP10K40
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: 2SD1797 N P N TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON = M S t f c 7 i,- * - f ê GENERAL PURPOSE POWER AMPLIFIER Features • H igh D . C . cu rre n t gain • B i f iS 'l i H ig h reliability : Applications S w itc h in g regu lators • D C -D C aw «-*

2SD1796

Abstract: FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor 4 A hFE mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB

2SD1797

Abstract: TO-220F17 2SD179
Contextual Info: 2SD1797 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 一般電力増幅用 GENERAL PURPOSE POWER AMPLIFIER 外形寸法 : Outline Drawings 外形寸法: TO-220F17

2044B

Abstract: 2SD1799
Contextual Info: Ordering number:EN2110B NPN Epitaxial Planar Silicon Transistor 2SD1799 Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package Dimensions unit:mm 2045B [2SD1799] Features · High DC current gain hFE≥4000 .

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1795

Abstract: transistor ,12v ,Ic 1A ,NPN vbe 10v, vce 500v NPN Transistor darlington 1A 500v ITO-220 transistor 12v 1A NPN 2SD179
Contextual Info: Inchange Semiconductor Product Specification 2SD1795 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

2SD1796

Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
Contextual Info: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800

2SD1796

Abstract: relay 12v 3a datasheet FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A

2SD1795

Abstract: ITO-220 TP10K40 7105A
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1795 Case : ITO-220 TP10K40 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1793

Abstract: ITO-220 TP10L10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1793 Case : ITO-220 TP10L10 Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: Ordering number : EN 2 1 10B 2SD1799 N O .2 1 1 0 B SA \YO N FN E p itax ial P la n a r Silicon T ran sisto r Driver Applications A p p lica tio n s . Motor drivers, p rin te r ham m er drivers, relay d rivers, voltage reg u lato r control F eatu res •H igh DC c u rre n t gain hpE = 4000

Contextual Info: 2SD1796 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2k h(FE) Max. Current gain.

2SD1792

Abstract: ITO-220 TP7L20
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1792 Case : ITO-220 TP7L20 Unit : mm 7A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SD1790

Abstract: ITO-220 transistor bb2 TP4L6Z
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1790 Case : ITO-220 TP4L6Z Unit : mm ± 4A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: 2SD1793 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k h(FE) Max. Current gain.

2SD1790

Abstract: ITO-220
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1790 Case : ITO-220 TP4L6Z Unit : mm 4A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

darlington Vce-200V

Abstract: 2SD1792 ITO-220 416W
Contextual Info: SavantIC Semiconductor Product Specification 2SD1792 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

2sd1794

Abstract: TP10L20 ITO-220
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1794 Case : ITO-220 TP10L20 Unit : mm 10A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage