2SD148 Search Results

2SB1052

Abstract: 2SD1480 IC 4090
Contextual Info: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION

2SB1055

Abstract: 2SD1486
Contextual Info: JMnic Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

2SB1052

Abstract: 2SD1480 8MA11
Contextual Info: Power T ransistòrs 2SB1052 2SB 1052 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1480 • Features . • High DC c u rre n t gain I i f e and good linearity • Low collector-eim itter saturation voltage (VcEcsao)

2SB1052

Abstract: 2SD1480
Contextual Info: SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1480 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1

2SD1488

Abstract: 2SB1057
Contextual Info: SavantIC Semiconductor Product Specification 2SB1057 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

2SB1056

Abstract: 2SD1487
Contextual Info: SavantIC Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

2SD1489

Abstract: 2SD787 DSA003638
Contextual Info: 2SD1489 Silicon NPN Epitaxial ADE-208-1156A Z 2nd. Edition Mar. 2001 Application • Low frequency power amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 10.0±0.2 0.7±0.1 Features 4.2±0.2 5.5±0.2 2.7±0.2 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD1488

Abstract: 2SB1057 7A20 33SI 2sB105
Contextual Info: 2SD1488 2 SD 1 4 8 8 U H V NPN /' —•^■Jl^/Si N P N T rip le D iffused P lanar Power Amplifier i] /'Complementary Pair with 2SB1057 U n it : mm 5 .2 m a x . 2SB1057 4 ~ ■ # n d> CM it/F e a tu r e s ■X 3§ L 4J* -1 o • £ k , ¡ t S t S i X i f 1 > ii£ h FE

2SB1055

Abstract: 2SD1486
Contextual Info: Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

Contextual Info: 2SD1949 / 2SD1484K Transistors Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Absolute maximum rationgs (Ta=25 C) Symbol VCBO Limits Unit 50

2SD1480

Abstract: 2SB1052
Contextual Info: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors I M edium Pow er T ran sistor 50V, 0.5A 2S D 1949 / 2SD1484K / 2SC 1741 AS • F eatu res • A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A )

2SD1487

Abstract: 2SB1056
Contextual Info: JMnic Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

Abstract: JAPAN transistor 2SD1484K IMX17
Contextual Info: Transistors General purpose transistor dual transistors IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) High collector current.

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors Medium Power Transistor 50V, 0.5A I 2SD1949 / 2SD1484K / 2SC1741AS •Features •Absolute maximum ratinga (Ta=25t) 1 ) H ig h c u r r e n t , ( k — 0 .5 A ) 2 ) L o w V c e (w i >. ( T y p . 0 . 1 V Parameter

2SD1481

Contextual Info: 2SD1481 2SD1481 y - U NPN Silicon Epitaxial Darlington Transistor Audio Frequency Amplifier and Low Speed Switching Industrial Use h >& M > nmm ¡ 8 / FEATURES 9Wm / P A C K A G E DIMENSIONS o - if - i- 't t F h iM f f lC - B R ilt 0 3 u? V CE(sat)=

2SB1054

Abstract: 2SD1485
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1054

Abstract: 2SD1485
Contextual Info: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

c102 TRANSISTOR

Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT

dual npn 500ma

Abstract: 2SD1484K IMX17 NPN Silicon Epitaxial Planar Transistor Transistors General
Contextual Info: Transistors General purpose transistor dual transistors IMX17 FFeatures 1) Two 2SD1484K chips in an SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) High collector current.

2SB1054

Abstract: 2SD1485
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip