2SD1047
Abstract: 2SB817 2SD1047 transistor
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SD1047 2SD1047 transistor is designed for use in general purpose Power amplifier,application FEATURES: * Collector-Emitter Voltage VCEO= 140V Min * DC Current Gain hFE= 60-200@lc= 1.0A * Complement to 2SB817 12 AMPERE
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2SB817
Abstract: 2SD1047 2SB817 2SD1047 2sd1047 equivalent 2SD1047F 4017 12AAF
Contextual Info: Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Package Dimensions unit:mm 2022A [2SB817/2SD1047] 15.6 14.0 3.2 3.5 4.8 2.0 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .
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enn680f2sb817/2sd104740v/12a2sb817+62sd10472sb817 2sd10472sd1047 equivalent2sd1047f401712aaf
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transistor 2sd1047
Abstract: 2SB817 2sd1047 605K transistor 1047 2SB817 2SD1047 2sb transistor transistor 2sb817 817 c w
Contextual Info: O rdering num ber: EN 680F 9 i 2SB817/2SD1047 N0.68OF 2SB817 : PNP Epitaxial P lanar Silicon Transistor 2SD1047 : NPN Triple Diffused Planar Silicon Transistor I 140V/12A, AF 60W Output Applications F e a tu re s • Capable of being mounted easily because of one-point fixing type plastic molded package
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2sb817/2sd10472sb8172sd104740v/12a+900s0d0217/2stransistor 2sd1047605ktransistor 10472sb817 2sd10472sb transistortransistor 2sb817817 c w
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3B817
Abstract: 2SB817 2SD1047 transistor 2sd1047 2SB817 2SD1047
Contextual Info: Ordering number: EN 680F 2SB817/2SD1047 2SB817 : P N P Ep itax ial Plan ar Silicon Transistor 2SD1047 : N P N Triple Diffused Plan ar Silicon Transistor 140V/12A, AF 60W Output Applications F e atu re s •Capable of being mounted easily because of one-point fixing type plastic molded package
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2sb817/2sd10472sb8172sd104740v/12a+33b817transistor 2sd10472sb817 2sd1047
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2sd1047 equivalent
Abstract: 2SB817 2SD1047 2SB817 2SD1047
Contextual Info: Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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2sb8172sd104740v/12a2sd1047 equivalent+12sb817 2sd1047
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2sd1047 equivalent
Abstract: transistor 2sd1047 202327-62 2SB817 2SD1047 SC-65
Contextual Info: 2SD1047 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB817 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2sd1047sc-652sb8172sd1047 equivalent+2transistor 2sd1047202327-62
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transistor 2sb817
Abstract: 2SB817 2SD1047 SC-65
Contextual Info: 2SB817 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SD1047 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2sb817sc-652sd1047curr00+1transistor 2sb817
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2SD1047
Abstract: 2sd1047 equivalent 2SB817 2SD1047 2SB817
Contextual Info: SavantIC Semiconductor Product Specification 2SD1047 Silicon NPN Power Transistors DESCRIPTION •Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2sd10472sb8172sd1047 equivalent2sb817 2sd1047 |
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2SB817
Abstract: 2sd1047
Contextual Info: Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .
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2SB817
Abstract: 2SD1047 12AAF
Contextual Info: SavantIC Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1047 APPLICATIONS ·140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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transistor 2sb817
Abstract: transistor 2sd1047 2sd1047 equivalent transistor 10mhz 60w transistor pnp 1a 2SD1047 DATA SHEET 2SB817 2SD1047 161 TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047
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2sb817-140v2sd1047transistor 2sb817+6transistor 2sd10472sd1047 equivalenttransistor 10mhz 60wtransistor pnp 1a2sd1047 data sheet161 transistor
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2SB817
Abstract: 12AAF 2SD1047 DATA SHEET 2SD1047
Contextual Info: JMnic Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter
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2sb8172sd104740v/12a12aaf+12sd1047 data sheet
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2SB817 2SD1047
Abstract: 2SB817 2SD1047
Contextual Info: Ordering number : ENN680F SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features • Capable of being mounted easily because of one-point fixing type plastic molded package
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enn680f2sb817/2sd104740v/12a2sb817+22sd10472sb817 2sd1047
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2SB817
Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047
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2sb8172sd10472s8817transistor 2sd1047+1transistor 2sb817
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transistor c4467
Abstract: mosfet a1694 C4467
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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mt-2002sa1694/2sc4467a1694/c44672sa1694+62sc44672sa1264/2sc3181mj2955transistor c4467mosfet a1694c4467
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2SD1046
Abstract: 2SB514
Contextual Info: SAfiYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2sc2078o-22027mhzt0-220+3mt930303tr2sd10462sb514
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2SB511
Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
Contextual Info: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2sc2078o-22027mhztag75+152sd8952sb7762sd8962sb8162sd10462sb8172sb5112sc40302sa10112sc23442sc40312sc44932sc45722sc45782sc4579
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jc 817
Abstract: 2SB811 2SD1021 2SD1032 2SD1046 2SD1047 2SD1048
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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2sd1068tc-25jc 8172sb811+52sd10212sd10322sd10462sd10472sd1048
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transistor 2SB618
Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2sa7332sj742sk1702sj76+82sk2132sj772sk2142sj1032sk2462sj109transistor 2sb6183a/fllnm 80
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audio amplifier POWER TRANSISTORS
Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Contextual Info: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)
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2sb632kt01262sd612k2sa1692+122sc38072sc38082sb5112sd3252sb514audio amplifier power transistors2sk669mosfet analog switch500 w power amplifier2sa17632sk1840audio power amplifier
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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do-15do-201ado-220act0202-3+12stgp3nb60hdstgp7nb60hdbzx85c12vtoshiba 2n3055bta41-600b applicationbta41-600b firing circuittab 429 h toshibabzx85c20vscr tyn612 pin configurationpicaxetyn612 specification2sa1085e
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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t0220mlto-32-0702sa1678fc102+72sc44492sa14162sj1932sk2832sc4106 application notes2sc3383fc124
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