2SC60 Search Results

Contextual Info: 2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single

Contextual Info: 2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 µs (typ)

Contextual Info: 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 250 to 400 IC = 2.5 A • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) •

Contextual Info: 2SC6096 Ordering number : ENA0434 SANYO Semiconductors DATA SHEET 2SC6096 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • •

Contextual Info: 2SC6044 Ordering number : ENN8251 2SC6044 NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT process.

Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

2SA2151

Abstract: 2sc6011 200v 5a pnp 2sa215
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications

2SC6061

Contextual Info: 2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.4±0.1 1 3 2 Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage

2SA21

Abstract: 2SA2154 2SC6026
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026

transistor c6082

Abstract: C6082 2SC6082
Contextual Info: Ordering number : ENA0279B 2SC6082 Bipolar Transistor http://onsemi.com 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications • High-speed switching applications (switching regulator, driver circuit) Features • • Adoption of MBIT process Low collector-to-emitter saturation voltage

Contextual Info: Ordering number : ENA0412A 2SC6097 Bipolar Transistor http://onsemi.com 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

2SC6026CT

Abstract: 2SA2154CT
Contextual Info: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)

2SC6077

Contextual Info: 2SC6077 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6077 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC= 1 A) •

Contextual Info: Ordering number : ENA0411A 2SC6095 Bipolar Transistor 80V, 2.5A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage

2sc6093

Abstract: 2SC6093LS
Contextual Info: 2SC6093LS Ordering number : ENA0274 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6093LS Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

82306

Abstract: 2SC6099 VR10
Contextual Info: 2SC6099 Ordering number : ENA0435 SANYO Semiconductors DATA SHEET 2SC6099 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • •

2SA2161J

Abstract: 2SC6037J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)

2SA2162

Abstract: 2SC6036 2SC603
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C