2SA215 Search Results

Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

2SA2151

Abstract: 2sc6011 200v 5a pnp 2sa215
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications

2SA21

Abstract: 2SA2154 2SC6026
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity

2SA2151

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA2151 Silicon PNP Power Transistor ./ f pX^ DESCRIPTION 1I • High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) r^, I PIN 1.8ASE

Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

equivalent for 2sa1668

Contextual Info: 2SA2151 Audio Amplification Transistor Features and Benefits Description Small package TO-3P High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –200 V versions available

Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)

Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

2SA2154MFV

Abstract: 2SC6026MFV
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)

missile guidance ic

Abstract: 2SA2154 2SC6026
Contextual Info: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154

2SC6026

Abstract: 2SA2154
Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications • High voltage and high current 0.6±0.05 • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max)

2SA2154MFV

Abstract: 2SC6026MFV 2SA21
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)

2SC6011A

Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS

a2151a

Abstract: 2SA2151A SANKEN AUDIO 2SA1668A sanken power audio
Contextual Info: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown

A2151A

Contextual Info: 2SA2151A Audio Amplification Transistor Features and Benefits Description Small package TO-3P High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –230 V versions available

SOT89 transistor marking 4A

Contextual Info: 2SA2153 Ordering number : EN8123A SANYO Semiconductors DATA SHEET 2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of MBIT process

transistor marking hy

Abstract: 2SA2154MFV 2SC6026MFV PCT 245
Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage

transistor a2151

Abstract: A2151 2SA2151 2sc6011 Sanken Transistor Mt 200 SANKEN AUDIO data A2151 ic pa sanken SC102 YG6260
Contextual Info: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown

Contextual Info: 2SA2153 Ordering number : EN8123A SANYO Semiconductors DATA SHEET 2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment • Features Adoption of MBIT process

Contextual Info: 2SA2153 Ordering number : ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of MBIT process. Low saturation voltage.

MARKING AZ

Abstract: 2SA2153
Contextual Info: 2SA2153 Ordering number : ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of MBIT process. Low saturation voltage.

transistor a2151

Abstract: A2151 2sa2151 equivalent for 2sa1668 sanken a2151 2sc6011 sanken audio sanken transistors mold "Sanken Rectifiers"
Contextual Info: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown