2SC601 Search Results

2SA2151

Abstract: 2sc6011 200v 5a pnp 2sa215
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications

2SC6016

Contextual Info: 2SC6016 Ordering number : EN8559 2SC6016 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. Large current capacitance.

2SC6012

Contextual Info: Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Emitter-base voltage (Collector open) VEBO

2SC4832

Abstract: 2SA2151
Contextual Info: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown

2-7D101A

Abstract: 2SC6010 C6010
Contextual Info: 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed switching: tf = 0.24µs max (IC = 0.3A) Maximum Ratings (Ta = 25°C)

2SC6010

Abstract: 2-7D101A C6010 MA80200
Contextual Info: 2SC6010 東芝トランジスタ シリコンNPN三重拡散形 2SC6010 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 • 単位: mm スイッチング時間が速い。 : tf = 0.24 s 最大 (IC = 0.3 A)

2-7D101A

Abstract: 2SC6010 C6010 024-S
Contextual Info: 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm High speed switching: tf = 0.24 s max (IC = 0.3A) Absolute Maximum Ratings (Ta = 25°C)

2SC6011A

Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS

2SC6013

Contextual Info: 2SC6013 Ordering number : EN8556 2SC6013 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. Large current capacitance.

2SA2169

Abstract: 8275-2 2sc6017 transistor 2SA21 2SC6017 ic 8275 2044B
Contextual Info: 2SA2169 / 2SC6017 Ordering number : ENN8275 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2169 / 2SC6017 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process.

transistor a2169

Contextual Info: 2SA2169/2SC6017 Ordering number : EN8275A SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2169/2SC6017 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • Adoption of MBIT processes

EN8558

Abstract: 2SC6015
Contextual Info: 2SC6015 Ordering number : EN8558 2SC6015 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. Large current capacitance.

sanken c6011

Abstract: 2SC4832 c6011 2SC6011 c6011 transistor NPN c6011 2SA2151 sanken audio "Sanken Rectifiers" "Sanken Electric"
Contextual Info: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown

c6017

Abstract: transistor a2169 transistor c6017 c6017 transistor a2169 2SC6017 C60-17 2SC6017-TL-E 2SA2169 2SA2169-E
Contextual Info: 2SA2169/2SC6017 Ordering number : EN8275A SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2169/2SC6017 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • Adoption of MBIT processes

Contextual Info: 2SC6011A Audio Amplification Transistor Features and Benefits Description Small package TO-3P High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 230 V versions available

transistor a2169

Abstract: c6017 a2169
Contextual Info: 2SA2169/2SC6017 Ordering number : EN8275A SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2169/2SC6017 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • Adoption of MBIT processes

2SC4832

Abstract: c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21
Contextual Info: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown

marking QB

Abstract: 2SC6014 IT09759
Contextual Info: 2SC6014 Ordering number : EN8557 2SC6014 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. Large current capacitance.

2SC6019

Contextual Info: 2SC6019 Ordering number : ENN8342 2SC6019 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. Large current capacitance.

Contextual Info: 2SC6011 Audio Amplification Transistor Features and Benefits Description Small package TO-3P High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 200 V versions available

2SA2151

Abstract: 2sc6011 2SA21
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications

Contextual Info: 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed switching: tf = 0.24µs max (IC = 0.3A) Maximum Ratings (Ta = 25°C)

2SC625

Abstract: 2SC639 2SC630 2SC667 2SC647 2SC669A 2SC637 datasheet 2sc647 2SC627 2SC617
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber Ic (V) (V) (mA) (mW) (ºC) VCE(V) (MHz) (pF) (mA) 2SC601 40 5 100 300 175 60 1 10 580* 2.4 2SC602 30 3 30 200 150 800*

Contextual Info: 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed switching: tf = 0.24µs max (IC = 0.3A) Absolute Maximum Ratings (Ta = 25°C)