2SA2162 Search Results

2SA2162

Abstract: 2SC6036 2SC603
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

2SA2162g

Abstract: 2SC603
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

2SA2162G

Abstract: 2SC6036
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

2SA21

Abstract: marking 2u 2SA2162 2SC6036
Contextual Info: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)

2SA2162G

Abstract: 2SC6036 2SC6036G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2SC603

Abstract: 2SA2162 2SC6036
Contextual Info: Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)

2SA21

Abstract: 2SA2162G 2SC6036
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

2SA2162

Abstract: 2SC6036 2SC60 2SC603
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C

2SA2162

Abstract: 2SC6036
Contextual Info: Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33 0.05 0.02 • Features 0.10 0.05 0.02 0.80 1.20 VCBO –15 V Collector-emitter voltage Base open VCEO –12 V Emitter-base voltage (Collector open)

2SA2162

Abstract: 2SA2162G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

2SC6036

Abstract: 2SA2162
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05

2SA2162G

Abstract: 2SA2162
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.80±0.05 1.20±0.05 Collector-emitter voltage (Base open)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1806J

Abstract: 2SA2082 2SA2162
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 0.60±0.05 2 1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro