2SC597 Search Results

Contextual Info: 2SC5976 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5976 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: VCE sat = 0.14 V (最大)

IC TL 0841

Abstract: 2SC5975 1 928 404 226
Contextual Info: 2SC5975 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0381-0100Z Rev.1.00 Jul.06.2004 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz

8070

Abstract: 2044B 2SC5979 VR10
Contextual Info: 2SC5979 Ordering number : ENN8070 2SC5979 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET, MBIT process.

Contextual Info: 2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications Unit: mm Low collector-emitter saturation voltage: VCE sat = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.)

2SC5974B

Abstract: muting LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN VEBO-40V
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISAHAYA 2SC5974B is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

Contextual Info: Reliability Tests Report Product Name: 2SC5976 Package Name: TSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s

2SC5976

Contextual Info: 2SC5976 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5976 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: VCE sat = 0.14 V (最大)

2SC5976

Contextual Info: 2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications Unit: mm Low collector-emitter saturation voltage: VCE sat = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.)

Contextual Info: 2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Low collector-emitter saturation voltage: VCE sat = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.) 1 3 2 Collector-base voltage

isahaya

Abstract: 2SC5974B
Contextual Info: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974B is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

isahaya

Abstract: 2SC5974
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit : mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

2SC5974A

Abstract: MUTING AND SWITCHING APPLICATION
Contextual Info: 〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application

2SC5976

Contextual Info: 2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.) 1 3 2 Rating

IC TL 0841

Abstract: 0458 npn 2SC5975
Contextual Info: 2SC5975 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0381-0100Z Rev.1.00 Jul.06.2004 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz

Contextual Info: 2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.14 V (max) • High-speed switching: tf = 25 ns (typ.) 1 3 2 Rating

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

2sc6096

Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages