2SC5080 Search Results

Hitachi DSA002756

Contextual Info: 2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5080 Absolute Maximum Ratings Ta = 25°C

transistor z 0607

Abstract: z 0607 ma Z 728
Contextual Info: H ITACH I 2SC5080-Silicon NPN Epitaxial Transistor Application V H F & U H F w ide band am plifire MPAK-4 Features • H igh gain bandw idth product fx = 13.5 G H z typ • H igh gain, low noise figure PG = 18 dB typ, N F = 1.1 dB typ at f = 900 M H z

ZO 607 MA

Abstract: transistor zo 607 2SC5080 2SC5080ZD-TL-E AB5S
Contextual Info: 2SC5080 Silicon NPN Epitaxial REJ03G0742-0300 Previous ADE-208-1132A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

SL6 TRANSISTOR

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.

transistor zo 607

Abstract: ZO 607 MA zo 607 zo 103 ma zo 103 ma 75 607 zo 607 p 408 2SC5080 DSA003638
Contextual Info: 2SC5080 Silicon NPN Epitaxial ADE-208-1132A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product • High gain, low noise figure fT= 13.5 GHz typ PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 - 3^dBgH 1.

SL6 TRANSISTOR

Abstract: Transistor D 799 Hitachi DSA002746
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 3 1 2 1. Collector

zo 607

Abstract: zo 607 MA transistor zo 607 equivalent ZO 607 ZD 103 ma 2SC5080 ZD 607 ZD 103 zo 405 TRANSISTOR pc 135
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor Application VHF & UHF wide band amplifire MPAK–4 Features 4 • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter

Contextual Info: 2SC5080 Silicon NPN Epitaxial HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 M Hz Outline MPAK-4 1. Collector 2. Emitter

transistor hitachi

Abstract: HITACHI VC-6045
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £

zo 607

Abstract: ZO 607 MA transistor zo 607 zo 103 ma 75 607 HX 830 equivalent ZO 607 zo 103 ma zo 607 p 408 2SC5080 Hitachi DSA00334
Contextual Info: 2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter

ZO 607 MA

Abstract: transistor zo 607 zo 103 ma 75 607 zo 103 ma 2SC5080 2SC5080ZD-TL-E
Contextual Info: 2SC5080 Silicon NPN Epitaxial REJ03G0742-0300 Previous ADE-208-1132A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz

transistor z 0607

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor Application V H F & U H F w ide band a m p lifire M P A K -4 Features • H ig h gain bandw idth product fx = 13.5 G H z typ • H igh gain, lo w noise figure 1. 2. 3. 4. PG = 18 dB typ, N F = 1.1 dB typ at f = 900 M H z

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

SL6 TRANSISTOR

Abstract: hitachi power transistor
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline C M P A K -4 £ ! S a!l!tlQr £

SL6 TRANSISTOR

Abstract: Hitachi Transistor Hitachi DSA002746
Contextual Info: 2SC5081 Silicon NPN Epitaxial Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline CMPAK–4 4 3 1 2 1. Collector

Hitachi DSA002756

Contextual Info: 2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline 2SC5081 Absolute Maximum Ratings Ta = 25°C

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

varicap diodes

Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Contextual Info: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld

Contextual Info: 2SC5081 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fx = 13.5 G H z T yp • H igh gain, low noise figure PG = 18 dB Typ, N F = 1.1 dB T yp at f = 900 M Hz Outline CMPAK-4 4 T 1. Collector

ZO 607 MA

Abstract: 2SC5080
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog