2SC3939 Search Results

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5

2SA1533

Abstract: 2SC3939
Contextual Info: Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2SA1533

Abstract: 2SC3939
Contextual Info: Transistors 2SA1533 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5 • Low collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

Contextual Info: 2SC3939Q Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5

2SA1533

Abstract: 2SC3939
Contextual Info: Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

2SA1533

Abstract: 2SC3939
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 0.7±0.1 0.7±0.2 • High collector-emitter voltage (Base open) VCEO

2SA1533

Abstract: 2SC3939
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1533 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 4.0±0.2 0.7±0.1 13.5±0.5 • Low collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3939 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA1533 4.0±0.2 Unit: mm 8.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 • Features

2SA1533

Abstract: 2SC3939
Contextual Info: Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage

2SA1533

Abstract: 2SC3939
Contextual Info: Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 5.0±0.2 4.0±0.2 ● 0.7±0.2 ● 8.0±0.2 • Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

2sc3939

Abstract: 2SA1533
Contextual Info: Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 Unit: mm 5.0±0.2 4.0±0.2 ● 0.7±0.1 13.5±0.5 ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: Panasonic Transistor 2SC3939 Silicon NPN epitaxial planer type For low -frequency d river am plification C om ple m e ntary to 2 S A 1 533 • Features • High collector to emitter voltage Vceo. • Optimum for the driver stage of a low-frequency and 25 to 30W

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1533 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 0.7±0.2 0.7±0.1 13.5±0.5

TO-220FA

Abstract: 2sc3943 2SC3939 2SC3940 2SC3940A 2SC3941 2SC3942 2SC3944 2SC3944A 2SC3945
Contextual Info: - 180 - wir 2SC3939 2SC3940 2SC3940A 2SC3941 2SC3942 2SC3943 2SC3944 2SC3944A 2SC3945 2SC3946 2SC3947 2SC3948 2SC3949 2SC3950 2SC3951 2SC3952 2SC3953 2SC3954 2SC3955 2SC3956 2SC3957 2SC3963 2SC3964 2SC3965 2SC3967 2SC3968 2SC3969 2SC3970 2SC3970A 2SC3971 2SC3971A

2SA1533

Abstract: 2SC3939
Contextual Info: Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage

2SA1533

Abstract: 2SC3939
Contextual Info: Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC3939 Unit: mm 5.0±0.2 4.0±0.2 ● 0.7±0.2 ● 8.0±0.2 • Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W

Contextual Info: 2SC3939R Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and