2SC342 Search Results

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3425 INDUSTRIAL APPLICATIONS Unit in iran SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. JZ < 3 .1 ± 0 .1 HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES: . Excellent Switching Times : tr= l .0«s Max. , tf=l.5iis(Max.) at 1^=0.5A

2SC3420

Contextual Info: JMnic Product Specification 2SC3420 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High DC current gain ・Low saturation voltage ・High collector power dissipation APPLICATIONS ・Storobo flash applications ・Medium power amplifier applications

2SC3424

Abstract: 80240 2SA1361
Contextual Info: -3 5 TO-126 ( j S ) PACKAGE S E R IE S o n T0-126<JSD JZ IffH. —“ CD o (0 N ro ' in i° Application . . VCEQ Type No. v PNP NPN Audio Drive T V Chroma Out I 'V I 2SC3423 j 2SC3424 2SA1360 T V Chroma Out v 2SC3619 I 1 2SA1361 • T V Chroma Out |

C3422

Abstract: 2SC3422 2SA1359
Contextual Info: 2SC3422 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3422 ○ 電力増幅用 ○ 低速度スイッチング用 単位: mm • hFE リニアリティが良好です。 • 2SA1359 とコンプリメンタリになります。

Contextual Info: TOSHIBA 2SC3425 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3425 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING INDUSTRIAL APPLICATIONS U nit in mm APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. 8 .3 M A X . ¿3 .1 ±0.1 *1

Contextual Info: TOSHIBA 2SC3420 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3420 Unit in mm STOROBO FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpg = 140—600 (V q e = 2V, I q = 0.5A) hFE = 70 (Min.) ( V c e = 2V, Ic = 4A)

2SC3420

Contextual Info: TO SH IBA 2SC3420 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3420 MEDIUM POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE = 140-600 (Vc e = 2V, Ic = 0.5A) hFE = 70 (Min.) ( V c e = 2V, Ic = 4A)

D4060

Abstract: 2SA1359
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1359 AUDIO FREQUENCY POWER AMPLIFIER. Unit in m m LOW SPEED SWITCHING. E3MAX. 2f5i±ai FEATURES: . Suitable for Output Stage of 5 Watts Car Radio and •ÏÏ- Car Stereo. . G o o d Line a r i t y of hpg. 1.0 MAX. . Complementary to 2SC3422.

Contextual Info: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

C3422

Abstract: AAAM strobo 2SC3420 2SD1508 2SD1509
Contextual Info: Powered T O -1 26 ¡ D O CO N N tn O Application Electronic-Library •c v CEO '-/P&'V. Type No. NPN PNP Ì Audio Drive 2SC3423 ! 2SA1360 T V Chroma Out 2SC3424 ! 2SA1361 . .1 (A VcE*(sat) w VX. ;W frp g,'. •' Tc=2?C V CE >C (V) (W> (V) (A) >c (V> (A)

2SC783

Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

transistor c3423

Abstract: C3423 transistor c3423 Y 2sc3423 2SA1360 c3423 transistor
Contextual Info: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO- 126C 2SC3421 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage 2. COLLECTOR

C3425

Abstract: transistor 2sc3425 2SC3425
Contextual Info: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)

2sa1359

Abstract: 2sa135 2SC3422
Contextual Info: Inchange Semiconductor Product Specification 2SA1359 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car

2sc3423

Abstract: 2SA1360
Contextual Info: Inchange Semiconductor Product Specification 2SC3423 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1360 ・High transition frequency APPLICATIONS ・Audio frequency amplifier applications PINNING PIN DESCRIPTION

2SA1358

Abstract: 2SC3421 A1358 TRANSISTOR A1358
Contextual Info: 2SA1358 TO SH IBA 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • • • 0 £ i± cn Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.

2SC3420

Abstract: SSOP16 TD62M4501F
Contextual Info: TOSHIBA TD62M4501F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4501F 4CH LOW SATURATION VOLTAGE SINK DRIVER TD62M4501F is Multi Chip IC incorporates 4 low saturation discrete 2SC3420 transistors. This IC is suitable for a battery use motor drive and LED

2SA1358

Abstract: 2SC3421
Contextual Info: 2SC3421 T O S H IB A 2SC3421 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY PO W ER A M PLIFIER APPLICATIONS 8.3 MAX. • • • 5.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage

A1360

Abstract: 2SA1360 2SC3423
Contextual Info: 2SA1360 TO SH IBA 2 S A 1 360 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 8.3 MAX. • • • Complementary to 2SC3423 Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency

2SA1360

Abstract: A1360 2SC3423
Contextual Info: 2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1360 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC3423 • Small collector output capacitance: Cob = 2.5 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)

C3420

Abstract: c3420 transistor 2SC3420 Bl c3420
Contextual Info: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)