2SC336 Search Results

2sc336

Abstract: 2SC3365
Contextual Info: Inchange Semiconductor Product Specification 2SC3365 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1330 HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES • High Voltage: V c e o = —200 V • High DC C u rrent Gain: hpE = 90 to 450 • C om plem entary to 2SC3360 A B S O LU T E M A X IM U M R A T IN G S

c04.2t

Abstract: transistor 2SC3360 transistor 2T
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SC3360 NPN エピタキシアル形シリコントランジスタ 高耐圧増幅およびスイッチング用 ★ ★ 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。

Contextual Info: 2SC3365 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3369 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)25 I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SMD IC S6

Abstract: MARKING S6 SMD MARKING s6 2SC3361
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3361 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High breakdown voltage. 1 0.55 Fast switching speed. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

smd transistor n17

Abstract: transistor SMD n17 n17 smd SMD Marking n17 marking N15 n17 transistor 2SC3360 smd marking n16
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3360 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High voltage VCEO=200V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=90 to 450 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Hitachi DSA002787

Contextual Info: 2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector Flange 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

2sc336

Abstract: 2SC3365 DSA003644
Contextual Info: 2SC3365 Silicon NPN Triple Diffused ADE-208-892 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SC3360

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3360 HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Contextual Info: 2SC3368 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)16 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC LA 3361

Abstract: AN713 S904 ic 3361
Contextual Info: Ordering number : EN 3217 2SA1331/2SC3361 N o .3 2 1 7 P N P /N P N E p ita x ia l P la n a r S ilic o n T r a n sisto r s High-Speed Switching Applications F e a tu r e s • F a st sw itc h in g sp eed • H ig h b rea k d o w n v o lta g e • S m a ll-siz e d p a c k a g e p e r m ittin g th e 2 S A 1 3 3 1 /2 S C 3 3 6 1 -a p p lie d s e t s to be m ad e sm a ll an d slim

2SC3369

Contextual Info: 2SC3369 2SC3369 '>ij 3 > NPN x ¿IrìsT i P o w e r NPN Epitaxial Planar — Amplifier • # iü/Features • 41di t} 'C’&£>0/M iddle power output • iSiflJifT-'^&o/High gain ■ Absolute Maximum Ratings Ta = 25°C 17 U 9 9 • J3L = -y Symbol V CEO

marking IAY

Abstract: 2SC3360 S200 SRS-200 2 fy
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC3360 HIGH VOLTAGE AMPLIFIER AND SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES P A C K A G E D IM E N S IO N S in millimeters 2.8±0.2 -8 00 +1 «* • High Voltage V CEo = 20 0 V • High DC Current Gain hpE = 9 0 to 4 5 0

2SA1331

Abstract: 2SC3361 EN3217
Contextual Info: Ordering number:EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim.

2SC2553

Abstract: 2SC1845 2SC3531 2SC3536 2SC2829 2SC2837 2sc2362 2SC2389 2sc3040 2SC3358
Contextual Info: - 148 - m % tt Type No. £ Man iif. ÏÏWjt 2SC 2828 # h SANYO ^ te T fâ T 2SC 2832 4? te T 2SC 2832A te T 2SC 2833 ^ te T 2SC 2833A te T ✓ 2SC 2834A 2SC 2837 te T te T 2SC30S6 2SC3Û87 2SC3089 ± M. F U JIT S U te T MATSUSHITA 2SC3365 2SC2740 2SC3365 2SC2740

NEC 2561

Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557

Hitachi DSA002755

Contextual Info: 2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline 2SC3365 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

2SC3303 to-251

Abstract: 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634
Contextual Info: POWER SILICON NPN Item Part Number Number I C 5 -10 15 -20 25 30 35 40 45 -50 ~ BUR10 BUR10 BUR10 SVTSO-5 SVTSO-5 SVTBO-5 2N2SS0 2N4113 2N4115 2N4306 2N4309 2SC520 2N1725 2N3S50 SOT5636 SOT63S3 2N2S93 2N5326 "~""";JIOI'\L. 55 - -60 2SC3367 2S0961 2N5337

2SC3361

Abstract: ITR03244 2SA1331 ITR03231 ITR03232
Contextual Info: 注文コード No.N 3 2 1 7 2SA1331 / 2SC3361 No. N3217 N0899 半導体ニューズ No.1341, 1342 ’ 87-88 データブック 個別半導体素子トランジスタ編 No.1341A, 1342A とさしかえてください。 2SA1331 / 2SC3361 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ

2SA1331

Abstract: 2SC3361 ITR03244
Contextual Info: Ordering number:ENN3217A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Package Dimensions • Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim.

2SA331

Abstract: 2SA1331 2SC3361 R25U 3361a C3361 2018a
Contextual Info: Ordering number:EN 3217 2SA1331/2SC3361 No.3217 PN P/N PN E pitaxial P la n ar Silicon T ransistors SAMVO i High-Speed Switching Applications Features •F a st sw itching speed • High breakdow n voltage • Sm all-sized package p erm ittin g the 2SA1331/2SC3361-applied sets to be made small and slim

8115, transistor

Abstract: TFK03 2SC3360 T108
Contextual Info: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS