2SC305 Search Results

2SC3055

Contextual Info: Inchange Semiconductor Product Specification 2SC3055 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base

.5J1

Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Contextual Info: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power

Contextual Info: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: Power T ransistors 2SC3054 2SC3054 Silicon NPN Triple-Diffused Junction M esa Darlington Type High Breakdown Voltage, High Speed Switching • Features Package Dimensions, • High breakdow n voltage and high reliability by glass passivation • High DC cu rre n t gain

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SC3052 TRANSISTOR（NPN ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM: 0.2 A Collector-base voltage

Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range

2SG3053

Abstract: 2SC3053
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „

Contextual Info: January 1990 Edition 1.1 PRODUCT PROFILE . 2SC3058A Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 3 0 5 8 A is a silicon N P N plan ar general purpose, high p ow er switching tra n ­ sistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T te chnology.

2SC3058

Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran ­ sistor fabricated w ith Fujitsu's unique Ring E m itter Transistor {RET technology.

2SC3052

Abstract: RT2C00M
Contextual Info: RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 SC-88 package. 1.25 0.2 RT2C00M is a composite transistor built with two 2SC3052 chips in FEATURE ① 0.65 ⑤ 2.0 Each transistor elements are independent.

2sc3052

Abstract: MARKING lf npn
Contextual Info: 2SC3052 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.2 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 0. 35

2SC3058

Contextual Info: Inchange Semiconductor Product Specification 2SC3058 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For switching regulator and DC/DC converter applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

2SC3052-G

Abstract: 2SC3052 2sc3052f
Contextual Info: MCC TM Micro Commercial Components 2SC3052-E 2SC3052-F 2SC3052-G
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF"

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

2sc3052

Abstract: 2SC3052F 2SC3052E 2SC3052-F 2SC3052G transistor 2sc3052 MARKING lf npn transistor marking LF marking LE 2SC3052-E
Contextual Info: 2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. Low collector to emitter saturation voltage

2SC3056

Contextual Info: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor

BC125

Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1

2SC3058

Abstract: high power switching transistor
Contextual Info: FUJITSU M I C R O E L E C T R O N I C S 31E » O 3 7 4 c17tiE G01L.57Ô T ESFMI T -3 3 5 ' January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran­

Contextual Info: 2SC3059 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)850 V(BR)CBO (V)1.2k I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3058A

Contextual Info: SavantIC Semiconductor Product Specification 2SC3058A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

2SC3058

Contextual Info: FU JI TSU M I C R O E L E C T R O N I C S 31E D ES BTLHTbH 001bS7ô T E1FI1I T -3 3 -l 5” January 1990 Edition 1.1 FUJITSU 2SC3058 Silicon High Speed Power Transistor DESCRIPTION The 2SC3058 is a silicon NPN planar general purpose, high power switching tran­

2sc3052

Abstract: sot-23 Marking Lf
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 TRANSISTOR NPN SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 0.15 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.2 A ICM: Collector-base voltage

sot-23 Marking Lf

Abstract: sot-23 Marking LG 2sc3052 MARKING LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃